Semiconductor device and method of forming interposer and opposing build-up interconnect structure with connecting conductive TMV for electrical interconnect of Fo-WLCSP

1. A method of making a semiconductor device, comprising:

providing a substrate including a plurality of first conductive vias formed through the substrate and a first conductive layer formed over the substrate;

providing a carrier;

mounting a semiconductor die over the carrier;

mounting the substrate to the semiconductor die opposite the carrier;

depositing an encapsulant between the substrate and carrier around the semiconductor die;

forming a plurality of second conductive vias through the substrate and encapsulant, the second conductive vias being electrically connected to the first conductive layer and first conductive vias;

removing the carrier to expose a surface of the second conductive vias; and

forming an interconnect structure over a surface of the encapsulant and semiconductor die opposite the substrate, the interconnect structure being electrically connected to the second conductive vias.

2. The method of claim 1 , wherein the second conductive vias protrude from the encapsulant.

3. The method of claim 1 , further including providing a plurality of alignment marks over the carrier to aid with mounting the semiconductor die.

4. The method of claim 1 , further including:

stacking a plurality of semiconductor devices; and

electrically connecting the semiconductor devices through the substrate, second conductive vias, and interconnect structure.

5. The method of claim 1 , further including stacking a plurality of semiconductor dies between the substrate and interconnect structure.

6. The method of claim 1 , wherein forming the interconnect structure includes:

forming a second conductive layer over the surface of the encapsulant and semiconductor die opposite the substrate; and

forming an insulating layer around the second conductive layer.

7. A method of making a semiconductor device, comprising:

providing a substrate having a conductive path through the substrate;

providing a semiconductor die;

mounting the substrate to the semiconductor die;

depositing an encapsulant around the semiconductor die;

forming a plurality of conductive vias through the substrate and encapsulant, the conductive vias being electrically connected to the conductive path through the substrate; and

forming an interconnect structure over a surface of the encapsulant and semiconductor die opposite the substrate, the interconnect structure being electrically connected to the conductive vias, wherein forming the interconnect structure includes,

forming a conductive layer over the surface of the encapsulant and semiconductor die opposite the substrate, and

forming an insulating layer around the conductive layer.

8. The method of claim 7 , wherein the conductive vias protrude from the encapsulant.

9. The method of claim 7 , further including aligning the interconnect structure to the conductive vias.

10. The method of claim 7 , further including:

stacking a plurality of semiconductor devices; and

electrically connecting the semiconductor devices through the substrate, conductive vias, and interconnect structure.

11. The method of claim 7 , further including stacking a plurality of semiconductor dies between the substrate and interconnect structure.

12. The method of claim 7 , further including depositing the encapsulant around the semiconductor die through an opening in the substrate.

13. A method of making a semiconductor device, comprising:

providing a semiconductor die;

mounting a substrate to the semiconductor die;

depositing an encapsulant around the semiconductor die through an opening in the substrate;

forming a plurality of conductive vias through the substrate and encapsulant; and

forming an interconnect structure over a surface of the encapsulant and semiconductor die opposite the substrate, the interconnect structure being electrically connected to the conductive vias.

14. The method of claim 13 , wherein the conductive vias protrude from the encapsulant.

15. The method of claim 13 , further including aligning the interconnect structure to the conductive vias.

16. The method of claim 13 , further including removing a portion of the semiconductor die prior to mounting the substrate.

17. The method of claim 13 , further including:

stacking a plurality of semiconductor devices; and

electrically connecting the semiconductor devices through the substrate, conductive vias, and interconnect structure.

18. The method of claim 13 , further including stacking a plurality of semiconductor dies between the substrate and interconnect structure.

19. A method of making a semiconductor device, comprising:

providing a first semiconductor die including an active surface and a back surface opposite the active surface;

mounting a substrate over the back surface of the first semiconductor die;

disposing an encapsulant around the first semiconductor die;

forming a first interconnect structure through the substrate and encapsulant;

forming a conductive layer over the encapsulant and active surface of the first semiconductor die; and

removing a portion of the first semiconductor die after disposing the encapsulant.

20. The method of claim 19 , further including:

stacking a plurality of semiconductor devices; and

electrically connecting the semiconductor devices through the substrate, first interconnect structure, and conductive layer.

21. The method of claim 19 , further including:

disposing a second semiconductor die between the first semiconductor die and the substrate; and

forming a second interconnect structure between the substrate and second semiconductor die.

22. The method of claim 19 , further including:

providing one or more alignment marks;

mounting the substrate aligned to the alignment marks; and

disposing the encapsulant around the alignment marks.

23. The method of claim 19 , further including forming the conductive layer aligned to the first interconnect structure.