Semiconductor device and method of forming shielding layer over semiconductor die mounted to TSV interposer
View Patent ↗A semiconductor device has a plurality of conductive vias formed partially through a substrate. A conductive layer is formed over the substrate and electrically connected to the conductive vias. A semiconductor die is mounted over the substrate. An encapsulant is deposited over the semiconductor die and substrate. A trench is formed through the encapsulant around the semiconductor die. A shielding layer is formed over the encapsulant. The trench is formed partially through the substrate and the shielding layer is formed in the trench partially through the substrate. An insulating layer can be formed in the trench prior to forming the shielding layer. A portion of the substrate is removed to expose the conductive vias. An interconnect structure is formed over the substrate opposite the semiconductor die. The interconnect structure is electrically connected to the conductive vias. The shielding layer is electrically connected to the interconnect structure.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a plurality of conductive vias partially through the substrate;
mounting a semiconductor die over the substrate;
depositing an encapsulant over the semiconductor die and substrate;
forming a trench through the encapsulant around the semiconductor die and aligned with one of the plurality of conductive vias;
forming a shielding layer that conforms to the encapsulant and extends to the substrate;
removing a portion of the substrate to expose the conductive vias; and
forming an interconnect structure over the substrate opposite the semiconductor die, the interconnect structure being electrically connected to the conductive vias.
2. The method of claim 1 , further including:
forming the trench partially through the substrate; and
forming the shielding layer in the trench partially through the substrate.
3. The method of claim 1 , further including forming a conductive layer over the substrate, the conductive layer being electrically connected to the conductive vias.
4. The method of claim 1 , further including forming an insulating layer in the trench prior to forming the shielding layer.
5. The method of claim 1 , further including depositing conductive paste in the trench.
6. The method of claim 1 , wherein the shielding layer is electrically connected to the interconnect structure.
7. The method of claim 1 , further including removing a portion of the substrate to expose the shielding layer.
8. A method of making a semiconductor device, comprising:
providing a substrate;
forming a plurality of conductive vias in the substrate;
mounting a semiconductor die over the substrate;
depositing an encapsulant over the semiconductor die and substrate;
forming a trench through the encapsulant proximate to the semiconductor die and aligned with one of the plurality of conductive vias;
forming a shielding layer over the encapsulant; and
forming an interconnect structure over the substrate opposite the semiconductor die, the interconnect structure being electrically connected to the conductive vias.
9. The method of claim 8 , further including removing a portion of the substrate to expose the conductive vias.
10. The method of claim 8 , further including:
forming the trench partially through the substrate; and
forming the shielding layer in the trench partially through the substrate.
11. The method of claim 8 , further including forming a conductive layer over the substrate, the conductive layer being electrically connected to the conductive vias.
12. The method of claim 8 , further including forming an insulating layer in the trench prior to forming the shielding layer.
13. The method of claim 8 , further including depositing conductive paste in the trench.
14. The method of claim 8 , wherein the shielding layer is electrically connected to the interconnect structure.
15. A method of making a semiconductor device, comprising:
providing a through silicon via (TSV) substrate;
mounting a semiconductor die over the TSV substrate;
depositing an encapsulant over the semiconductor die and TSV substrate;
forming a trench through the encapsulant proximate to the semiconductor die; and
forming a shielding layer that conforms to the encapsulant and extends into the trench and to the TSV substrate.
16. The method of claim 15 , further including forming an interconnect structure over the TSV substrate opposite the semiconductor die.
17. The method of claim 15 , further including removing a portion of the TSV substrate.
18. The method of claim 15 , further including forming a conductive layer over the TSV substrate.
19. The method of claim 15 , further including forming an insulating layer in the trench prior to forming the shielding layer.
20. The method of claim 15 , further including depositing conductive paste in the trench.
21. A method of making a semiconductor device comprising:
providing a through silicon via (TSV) substrate;
mounting a semiconductor die over the TSV substrate;
depositing an encapsulant over the semiconductor die and TSV substrate;
forming a trench through the encapsulant proximate to the semiconductor die and partially through the TSV substrate; and
forming a shielding layer over the encapsulant and into the trench partially through the TSV substrate.
22. The method of claim 21 , further including forming an interconnect structure over the TSV substrate opposite the semiconductor die.
23. The method of claim 21 , further including removing a portion of the TSV substrate.
24. The method of claim 21 , further including forming a conductive layer over the TSV substrate.
25. The method of claim 21 , further including forming an insulating layer in the trench prior to forming the shielding layer.
26. A method of making a semiconductor device, comprising:
providing a substrate;
mounting a semiconductor die over the substrate;
depositing an encapsulant over the semiconductor die and substrate;
forming a trench through the encapsulant proximate to the semiconductor die; and
forming a shielding layer over the encapsulant that extends into the trench and to the substrate.
27. The method of claim 26 , further including forming an interconnect structure over the substrate opposite the semiconductor die.
28. The method of claim 26 , further including removing a portion of the substrate.
29. The method of claim 26 , further including forming a conductive layer over the substrate.
30. The method of claim 26 , further including forming an insulating layer in the trench prior to forming the shielding layer.
31. The method of claim 26 , further including depositing conductive paste in the trench.