Semiconductor device with through-silicon vias
View Patent ↗Disclosed is a semiconductor device with through-silicon vias (TSVs) that comprises a primary TSV group, a plurality of signal lines connected to the primary TSV group, a redundant TSV group and connection circuitry responsive to a control signal having a predetermined value to electrically connect the signal lines to the redundant TSV group.
1. A semiconductor device with through-silicon vias (TSVs),
comprising:
a primary TSV group;
a first plurality of signal lines connected to the primary TSV group;
a redundant TSV group;
a second plurality of signal lines connected to the redundant TSV group;
connection circuitry responsive to a control signal from a single signal line having a predetermined value to electrically connect each signal line of the first plurality of signal lines to a respective signal line of the second plurality of signal lines.
2. The semiconductor device defined in claim 1 , further comprising:
a control circuit for generating the control signal.
3. The semiconductor device defined in claim 1 , wherein the connection circuitry is responsive to the control signal having a second predetermined value to electrically isolate each signal line of the first plurality of signal lines from a respective signal line of the second plurality of signal lines.
4. The semiconductor device defined in claim 3 , wherein the control signal is programmed by a fuse.
5. The semiconductor device defined in claim 1 , wherein the control signal is programmed by a programming element.
6. The semiconductor device defined in claim 1 , wherein the primary TSV group comprises:
a plurality of TSVs;
a plurality of selective connectors for causing each of the signal lines of the entire first plurality of signal lines to be electrically connected to one of the TSVs, based on a respective control signal.
7. The semiconductor device defined in claim 6 , the TSVs being first TSVs, the selective connectors being first selective connectors, each respective control signal being a first respective control signal, wherein the redundant TSV group comprises:
a plurality of second TSVs;
a plurality of second selective connectors for causing each of the signal lines of the entire first plurality of signal lines to be electrically connected to one of the second TSVs, based on a respective second control signal, when the signal lines are electrically connected to the redundant TSV group by the connection circuitry.
8. The semiconductor device defined in claim 1 , wherein the primary TSV group comprises:
a plurality of TSV subgroups associated with respective subsets of the signal lines, each of the TSV subgroups comprising:
a plurality of TSVs;
a plurality of selective connectors for causing each of the entire first plurality of signal lines in the respective subset of the signal lines to be electrically connected to one of the TSVs, based on a respective control signal.
9. The semiconductor device defined in claim 8 , the TSV subgroups being first TSV subgroups, the TSVs being first TSVs, the selective connectors being first selective connectors, wherein the redundant TSV group comprises:
a plurality of second TSV subgroups associated with respective ones of the subsets of the signal lines, each of the second TSV subgroups comprising:
a plurality of second TSVs;
a plurality of selective connectors for causing each of the signal lines of the entire first plurality of signal lines in the respective subset of the signal lines to be electrically connected to one of the second TSVs, based on a respective second control signal, when the signal lines are electrically connected to the redundant TSV group by the connection circuitry.
10. The semiconductor device defined in claim 1 , the predetermined value being a first predetermined value, the primary TSV group being a first primary TSV group, the device further comprising:
a second primary TSV group;
a third plurality of signal lines connected to the second primary TSV group;
wherein the connection circuitry is responsive to the control signal having a second predetermined value to electrically connect each signal line of the third plurality of signal lines to a respective signal line of the second plurality of signal lines.
11. The semiconductor device defined in claim 10 , wherein the connection circuitry is responsive to the control signal having a third predetermined value to electrically isolate the entire first plurality of signal lines and the entire third plurality of signal lines from the entire second plurality of signal lines.
12. The semiconductor device defined in claim 10 , wherein the control signal has the first predetermined value when it encodes an identity of the first primary TSV group and wherein the control signal has the second predetermined value when it encodes an identity of the second primary TSV group.
13. The semiconductor device defined in claim 11 , wherein the control signal has the third predetermined value when it encodes neither an identity of the first primary TSV group nor an identity of the second primary TSV group.
14. The semiconductor device defined in claim 10 , wherein the connection circuitry comprises a plurality of multiplexers, each multiplexer having a respective first input connected to a respective signal line in the first plurality of signal lines, a respective second input connected to a respective signal line in the third plurality of signal lines, a respective output connected to the redundant TSV group and a respective control input for receiving the control signal.
15. The semiconductor device defined in claim 14 , further comprising an electrical connection joining the control input of each of the multiplexers.
16. The semiconductor device defined in claim 14 , wherein each of the multiplexers is configured to acquire a high-impedance output state in response to the control signal having a third predetermined value.
17. The semiconductor device defined in claim 14 , wherein each of the multiplexers is configured to connect its output to its first input or to its second input depending on whether the control signal encodes an identity of the primary TSV group or of the second TSV group.
18. The semiconductor device defined in claim 10 , wherein the connection circuitry comprises a plurality of multiplexers in series with a respective plurality of devices capable of acquiring a high-impedance output state, each multiplexer having (i) a respective first input connected to a respective signal line in the first plurality of signal lines; (ii) a respective second input connected to a respective signal line in the third plurality of signal lines; (iii) a respective output connected to the redundant TSV group via the respective device capable of acquiring a high-impedance state; and (iv) a respective control input for receiving the control signal.
19. The semiconductor device defined in claim 18 , wherein the respective device capable of acquiring a high-impedance output state is responsive to a second control signal to acquire either a conductive state or a high-impedance state.
20. The semiconductor device defined in claim 19 , wherein the second control signal is programmed by a fuse or a programming element.
21. The semiconductor device defined in claim 18 , wherein each of the multiplexers is configured to connect its output to its first input or to its second input depending on whether the control signal encodes an identity of the primary TSV group or of the second TSV group.
22. The semiconductor device defined in claim 1 , wherein the primary TSV group comprises:
a plurality of TSVs;
a plurality of selective connectors for causing each of the entire first plurality of signal lines to be either electrically connected to one of the TSVs or isolated from all of the TSVs, based on a respective control signal.
23. The semiconductor device defined in claim 22 , the TSVs being first TSVs, the selective connectors being first selective connectors, each respective control signal being a first respective control signal, wherein the redundant TSV group comprises:
a plurality of second TSVs;
a plurality of second selective connectors for causing each of the signal lines of the entire first plurality of signal lines to be either electrically connected to one of the second TSVs or electrically isolated from all of the second TSVs, based on a respective second control signal, when the entire first plurality of signal lines are electrically connected to the redundant TSV group by the connection circuitry.
24. The semiconductor device defined in claim 1 , wherein the primary TSV group comprises:
a plurality of TSV subgroups associated with respective subsets of the signal lines, each of the TSV subgroups comprising:
a plurality of TSVs;
a plurality of selective connectors for causing each of the entire first plurality of signal lines in the respective subset of the signal lines to be either electrically connected to one of the TSVs or electrically isolated from all of the TSVs, based on a respective control signal.
25. The semiconductor device defined in claim 24 , the TSV subgroups being first TSV subgroups, the TSVs being first TSVs, the selective connectors being first selective connectors, wherein the redundant TSV group comprises:
a plurality of second TSV subgroups associated with respective ones of the subsets of the signal lines, each of the second TSV subgroups comprising:
a plurality of second TSVs;
a plurality of selective connectors for causing each of the signal lines of the entire first plurality of signal lines in the respective subset of the signal lines to be either electrically connected to one of the second TSVs or electrically isolated from all of the second TSVs, based on a respective second control signal, when the signal lines are electrically connected to the redundant TSV group by the connection circuitry.
26. A method of configuring a semiconductor device having a first plurality of signal lines connected to a primary through-silicon via (TSV) group, the method comprising:
determining whether the primary TSV group has a critical defect; in response to determining that the primary TSV group has a critical defect, providing a control signal from a single signal line to connection circuitry on the semiconductor device to electrically connect each signal line of the first plurality of signal lines to a respective signal line of a second plurality of signal lines connected to a redundant TSV group on the semiconductor device.
27. The method defined in claim 26 , wherein the primary TSV group comprises a plurality of TSVs including intact TSVs and failed TSVs, wherein determining whether the primary TSV group has a critical defect comprises determining whether the number of intact TSVs is less than the number of signal lines connected to the primary TSV group.
28. A semiconductor device with through-silicon vias (TSVs), comprising:
a primary TSV group with a critical defect;
a first plurality of signal lines connected to the primary TSV group;
a redundant TSV group;
a second plurality of signal lines connected to the redundant TSV group;
connection circuitry having been previously configured to electrically connect each signal line of the first plurality of signal lines to a respective signal line of the second plurality of signal lines in response to a control signal from a single signal line.
29. The semiconductor device defined in claim 28 , wherein the primary TSV group comprises:
a plurality of TSVs;
a plurality of connectors having been previously configured to electrically isolate each of the entire first plurality of signal lines from all of the TSVs.
30. The semiconductor device defined in claim 28 , the primary TSV group being a first primary TSV group, the device further comprising
a second primary TSV group;
a third plurality of signal liens connected to the second primary TSV group and to the connection circuitry;
the connection circuitry having been previously configured to electrically isolate the entire third plurality of signal lines from the second plurality of signal lines.