Semiconductor device and method of embedding TSV semiconductor die within encapsulant with TMV for vertical interconnect in POP

1. A method of making a semiconductor device, comprising:

providing a first conductive layer;

mounting a plurality of first semiconductor die having a conductive through silicon via (TSV) over the first conductive layer;

depositing an encapsulant around the first semiconductor die and over the first conductive layer to embed the first semiconductor die;

forming a conductive through mold via (TMV) through the encapsulant;

forming a second conductive layer over a first surface of the encapsulant;

forming a first insulating layer over the first surface of the encapsulant while exposing portions of the second conductive layer; and

forming a second insulating layer over a second surface of the encapsulant while exposing portions of the first conductive layer.

2. The method of claim 1 , further including forming a plurality of bumps over the first conductive layer.

3. The method of claim 1 , further including singulating through the encapsulant to separate the first semiconductor die.

4. The method of claim 1 , further including mounting a second semiconductor die over the first surface of the encapsulant electrically connected to the second conductive layer.

5. The method of claim 1 , further including removing a portion of the first insulating layer to expose a back surface of the first semiconductor die.

6. A method of making a semiconductor device, comprising:

providing a carrier;

mounting a plurality of first semiconductor die having a first conductive via to the carrier;

depositing an encapsulant around the first semiconductor die and over the carrier;

forming a second conductive via through the encapsulant;

forming a first interconnect structure over a first surface of the encapsulant;

removing the carrier;

forming a second interconnect structure over a second surface of the encapsulant opposite the first surface of the encapsulant; and

forming a first conductive layer over a back surface of the first semiconductor die.

7. The method of claim 6 , further including singulating through the encapsulant to separate the first semiconductor die.

8. The method of claim 6 , wherein forming the first interconnect structure includes:

forming a second conductive layer over the first surface of the encapsulant; and

forming a first insulating layer over the second conductive layer.

9. The method of claim 6 , further including mounting a second semiconductor die over the first surface of the encapsulant electrically connected to the first interconnect structure.

10. The method of claim 6 , further including mounting a second semiconductor die over the back surface of the first semiconductor die electrically connected to the first conductive layer.

11. The method of claim 6 , further including:

providing a substrate;

mounting a second semiconductor die to the substrate; and

mounting the substrate to the first interconnect structure.

12. The method of claim 6 , wherein forming the second interconnect structure includes:

forming a second conductive layer over the second surface of the encapsulant; and

forming a first insulating layer over the second conductive layer.

13. The method of claim 12 , wherein forming the second interconnect structure further includes forming a plurality of bumps over the second conductive layer.

14. A method of making a semiconductor device, comprising:

providing a first semiconductor die including an active surface and a non-active surface and including a plurality of first conductive vias;

depositing an encapsulant around the first semiconductor die and coplanar with the active surface and the non-active surface of the first semiconductor die;

forming a second conductive via through the encapsulant;

forming a first interconnect structure over a first surface of the encapsulant and over the non-active surface of the semiconductor die between the first conductive vias; and

forming a second interconnect structure over a second surface of the encapsulant.

15. The method of claim 14 , wherein forming the first interconnect structure includes:

forming a first conductive layer over the first surface of the encapsulant; and

forming a first insulating layer over the first conductive layer.

16. The method of claim 14 , wherein forming the second interconnect structure includes:

forming a first conductive layer over the second surface of the encapsulant; and

forming a first insulating layer over the first conductive layer.

17. The method of claim 14 , further including disposing a second semiconductor die over the first surface of the encapsulant.

18. The method of claim 14 , further including:

providing a substrate;

disposing a second semiconductor die over the substrate; and

disposing the substrate over the first interconnect structure.

19. The method of claim 14 , further including forming a first conductive layer over the first semiconductor die.

20. The method of claim 19 , further including disposing a second semiconductor die over the first semiconductor die.

21. A semiconductor device, comprising:

a first semiconductor die including a first conductive via;

an encapsulant deposited adjacent to the first semiconductor die;

a second conductive via formed through the encapsulant;

a first interconnect structure formed directly on a first surface of the encapsulant and a non-active surface of the first semiconductor die; and

a second interconnect structure formed on a second surface of the encapsulant.

22. The semiconductor device of claim 21 , further including a second semiconductor die disposed over the first surface of the encapsulant.

23. The semiconductor device of claim 21 , further including:

a substrate;

a second semiconductor die disposed over the substrate; and

the substrate disposed over the first interconnect structure.

24. The semiconductor device of claim 21 , wherein the first interconnect structure further includes a first conductive layer formed in contact with the non-active surface of the first semiconductor die.

25. The semiconductor device of claim 24 , further including a second semiconductor die disposed over the non-active surface of the first semiconductor die and electrically connected to the first conductive layer.

26. A method of making a semiconductor device, comprising:

providing a first semiconductor die including a first via;

depositing an encapsulant adjacent to the first semiconductor die;

forming a second via through the encapsulant;

forming a first conductive layer on a first surface of the encapsulant and contacting the first and second vias; and

forming a second conductive layer on a second surface of the encapsulant.

27. The method of claim 26 , further including forming an insulating layer over the first surface of the encapsulant while exposing a portion of the first conductive layer.

28. The method of claim 26 , further including disposing a second semiconductor die over the first surface of the encapsulant.

29. The method of claim 26 , wherein depositing the encapsulant further includes the encapsulant being coplanar with a first surface and a second surface of the first semiconductor die.

30. A semiconductor device, comprising:

a first semiconductor die;

an encapsulant deposited adjacent to the first semiconductor die;

a first conductive via formed through the encapsulant; and

a conductive layer formed in contact with a non-active surface of the first semiconductor die.

31. The semiconductor device of claim 30 , further including a second conductive via formed through the first semiconductor die.

32. The semiconductor device of claim 30 , further including the conductive layer formed over the encapsulant and electrically connected to the first conductive via.

33. The semiconductor device of claim 30 , further including an interconnect structure formed over an active surface of the first semiconductor die.