Semiconductor device and method of forming EWLB package containing stacked semiconductor die electrically connected through conductive vias formed in encapsulant around die

1. A method of making a semiconductor device, comprising:

providing a first semiconductor die;

depositing a first encapsulant around the first semiconductor die;

forming a first conductive layer over the first semiconductor die and first encapsulant;

disposing a second semiconductor die over the first conductive layer;

depositing a second encapsulant around the second semiconductor die while exposing a surface of the second semiconductor die including a contact pad;

forming a second conductive layer over the second semiconductor die and second encapsulant electrically connected to a contact pad of the second semiconductor die; and

forming a plurality of conductive vias through the first and second conductive layers and through the first and second encapsulants electrically connected to the first and second conductive layers.

2. The method of claim 1 , further including:

disposing a third semiconductor die over the second conductive layer;

depositing a third encapsulant around the third semiconductor die;

forming an insulating layer over the third semiconductor die and third encapsulant;

forming a third conductive layer over the insulating layer and third encapsulant electrically connected to a contact pad of the third semiconductor die; and

forming the plurality of conductive vias through the first, second, and third encapsulants outside a footprint of the first, second, and third semiconductor die electrically connected to the first, second, and third conductive layers.

3. The method of claim 2 , further including forming a first interconnect structure over the second or third conductive layer electrically connected to the conductive vias.

4. The method of claim 3 , further including forming a second interconnect structure over the first encapsulant electrically connected to the conductive vias.

5. The method of claim 4 , further including:

stacking a plurality of semiconductor devices; and

electrically connecting the stacked semiconductor devices through the first and second interconnect structures and conductive vias.

6. The method of claim 1 , wherein the first encapsulant includes a thickness different from the second encapsulant.

7. A method of making a semiconductor device, comprising:

providing a first semiconductor die;

forming a first conductive layer over the first semiconductor die;

disposing a second semiconductor die over the first semiconductor die;

depositing a first encapsulant around the second semiconductor die while exposing a surface of the second semiconductor die including a contact pad;

forming a second conductive layer over the second semiconductor die electrically connected to a contact pad of the second semiconductor die; and

forming a plurality of conductive vias through the first and second conductive layers and outside a footprint of the first and second semiconductor die.

8. The method of claim 7 , further including:

depositing a second encapsulant around the first semiconductor die;

forming a first insulating layer over the first semiconductor die and first encapsulant prior to forming the first conductive layer; and

forming a second insulating layer over the second semiconductor die and second encapsulant prior to forming the second conductive layer.

9. The method of claim 8 , further including:

disposing a third semiconductor die over the second semiconductor die;

depositing a third encapsulant around the third semiconductor die;

forming a third insulating layer over the third semiconductor die and third encapsulant;

forming a third conductive layer over the third insulating layer and third encapsulant electrically connected to a contact pad of the third semiconductor die; and

forming the plurality of conductive vias through the first, second, and third encapsulants outside a footprint of the first, second, and third semiconductor die electrically connected to the first, second, and third conductive layers.

10. The method of claim 9 , further including forming an interconnect structure over the second or third semiconductor die electrically connected to the conductive vias.

11. The method of claim 8 , further including forming an interconnect structure over the first encapsulant electrically connected to the conductive vias.

12. The method of claim 8 , wherein the first encapsulant includes a thickness different from the second encapsulant.

13. The method of claim 7 , further including:

stacking a plurality of semiconductor devices; and

electrically connecting the stacked semiconductor devices through the conductive vias.

14. A method of making a semiconductor device, comprising:

providing a first semiconductor die;

depositing a first encapsulant around the first semiconductor die;

disposing a second semiconductor die over the first semiconductor die;

depositing a second encapsulant around the second semiconductor die to expose a surface of the second semiconductor die including a contact pad; and

forming a plurality of conductive vias through the first and second encapsulants.

15. The method of claim 14 , further including:

forming a first insulating layer over the first semiconductor die and first encapsulant;

forming a first conductive layer over the first insulating layer and first encapsulant electrically connected to a contact pad of the first semiconductor die;

forming a second insulating layer over the second semiconductor die and second encapsulant;

forming a second conductive layer over the second insulating layer and second encapsulant electrically connected to a contact pad of the second semiconductor die; and

forming the plurality of conductive vias through the first and second encapsulants outside a footprint of the first and second semiconductor die electrically connected to the first and second conductive layers.

16. The method of claim 15 , further including:

disposing a third semiconductor die over the second semiconductor die;

depositing a third encapsulant around the third semiconductor die;

forming a third insulating layer over the third semiconductor die and third encapsulant;

forming a third conductive layer over the third insulating layer and third encapsulant electrically connected to a contact pad of the third semiconductor die; and

forming the plurality of conductive vias through the first, second, and third encapsulants outside a footprint of the first, second, and third semiconductor die electrically connected to the first, second, and third conductive layers.

17. The method of claim 16 , further including forming an interconnect structure over the second or third semiconductor die electrically connected to the conductive vias.

18. The method of claim 14 , further including forming an interconnect structure over the first encapsulant electrically connected to the conductive vias.

19. The method of claim 14 , further including:

stacking a plurality of semiconductor devices; and

electrically connecting the stacked semiconductor devices through the conductive vias.

20. The method of claim 14 , wherein the first encapsulant includes a thickness different from the second encapsulant.

21. A semiconductor device, comprising:

a first semiconductor die;

a first conductive layer depositing a first encapsulant around the second semiconductor die to expose a surface of the second semiconductor die including a contact pad formed over the first semiconductor die and electrically connected to a contact pad of the first semiconductor die;

a second semiconductor die disposed over the first conductive layer;

a first encapsulant deposited around the second semiconductor die to expose a surface of the second semiconductor die including a contact pad;

a second conductive layer formed over the second semiconductor die and electrically connected to the contact pad of the second semiconductor die; and

a plurality of conductive vias formed through the first and second conductive layers outside a footprint of the first and second semiconductor die electrically connected to the first and second conductive layers.

22. The semiconductor device of claim 21 , further including:

a second encapsulant deposited around the first semiconductor die;

a third semiconductor die disposed over the second semiconductor die;

a third encapsulant deposited around the third semiconductor die;

an insulating layer formed over the third semiconductor die and third encapsulant;

a third conductive layer formed over the insulating layer and electrically connected to a contact pad of the third semiconductor die; and

the plurality of conductive vias formed through the first, second, and third encapsulants outside a footprint of the first, second, and third semiconductor die electrically connected to the first, second, and third conductive layers.

23. The semiconductor device of claim 22 , further including forming an interconnect structure over the second or third semiconductor die electrically connected to the conductive vias.

24. The semiconductor device of claim 22 , further including forming an interconnect structure over the first encapsulant electrically connected to the conductive vias.

25. The semiconductor device of claim 21 , further including a plurality of stacked semiconductor devices electrically connected through the conductive vias.