Semiconductor device and method of forming three-dimensional vertically oriented integrated capacitors
View Patent ↗A semiconductor device includes conductive pillars disposed vertically over a seed layer, a conformal insulating layer formed over the conductive pillars, and a conformal conductive layer formed over the conformal insulating layer. A first conductive pillar, the conformal insulating layer, and the conformal conductive layer constitute a vertically oriented integrated capacitor. The semiconductor device further includes a semiconductor die or component mounted over the seed layer, an encapsulant deposited over the semiconductor die or component and around the conformal conductive layer, and a first interconnect structure formed over a first side of the encapsulant. The first interconnect structure is electrically connected to a second conductive pillar, and includes an integrated passive device. The semiconductor device further includes a second interconnect structure formed over a second side of the encapsulant opposite the first side of the encapsulant.
1. A semiconductor device comprising:
a seed layer;
a first conductive pillar disposed vertically over the seed layer;
a second conductive pillar disposed over the seed layer;
a conformal insulating layer formed over the first conductive pillar;
a conformal conductive layer formed over the conformal insulating layer, wherein the first conductive pillar, the conformal insulating layer, and the conformal conductive layer constitute a vertically oriented integrated capacitor;
a semiconductor die or component mounted over the seed layer; and
a first interconnect structure electrically connected to the second conductive pillar.
2. The semiconductor device of claim 1 , wherein the first interconnect structure comprises an integrated passive device.
3. The semiconductor device of claim 1 , further comprising an encapsulant deposited over the semiconductor die or component and around the conformal conductive layer, the first interconnect structure formed over a first side of the encapsulant.
4. The semiconductor device of claim 3 , wherein the first interconnect structure comprises:
a first conductive layer formed over the encapsulant, the first conductive layer electrically connected to the second conductive pillar;
a first insulating layer formed over the encapsulant and the first conductive layer;
a second conductive layer formed over the first insulating layer and the first conductive layer; and
a second insulating layer formed over the first insulating layer and the second conductive layer.
5. The semiconductor device of claim 3 , further comprising a second interconnect structure formed over a second side of the encapsulant opposite the first side of the encapsulant.
6. The semiconductor device of claim 1 , further comprising a second semiconductor die mounted to the first interconnect structure.
7. A semiconductor device, comprising:
conductive pillars including a first conductive pillar and a second conductive pillar;
a conformal insulating layer formed over the conductive pillars;
a conformal conductive layer formed over the conformal insulating layer, wherein the first conductive pillar, the conformal insulating layer, and the conformal conductive layer constitute a vertically oriented integrated capacitor;
a semiconductor die or component mounted over the conformal conductive layer and between the conductive pillars; and
a first interconnect structure electrically connected to the semiconductor die or component and vertically oriented integrated capacitor.
8. The semiconductor device of claim 7 , further comprising an encapsulant deposited over the semiconductor die or component and around the conformal conductive layer, the first interconnect structure formed over a first side of the encapsulant.
9. The semiconductor device of claim 8 , the first interconnect structure electrically connected to the second conductive pillar.
10. The semiconductor device of claim 9 , wherein the first interconnect structure comprises:
a first conductive layer formed over the encapsulant, the first conductive layer electrically connected to the second conductive pillar;
a first insulating layer formed over the encapsulant and first conductive layer;
a second conductive layer formed over the first insulating layer and first conductive layer; and
a second insulating layer formed over the first insulating layer and second conductive layer.
11. The semiconductor device of claim 8 , further comprising a second interconnect structure formed over a second side of the encapsulant opposite the first side of the encapsulant.
12. The semiconductor device of claim 7 , the first interconnect structure comprising an integrated passive device.
13. The semiconductor device of claim 7 , further comprising a second semiconductor die mounted to the first interconnect structure.
14. The semiconductor device of claim 13 , wherein the second semiconductor die is a flip chip type semiconductor die.
15. A semiconductor device, comprising:
a conductive pillar;
a conformal insulating layer formed over the conductive pillar;
a conformal conductive layer formed over the conformal insulating layer, wherein the conductive pillar, the conformal insulating layer, and the conformal conductive layer constitute a vertically oriented integrated capacitor; and
a semiconductor die or component mounted over the conformal conductive layer.
16. The semiconductor device of claim 15 , further comprising an encapsulant deposited over the semiconductor die or component and around the vertically oriented integrated capacitor.
17. The semiconductor device of claim 16 , further comprising:
a first interconnect structure formed over a first side of the encapsulant, the first interconnect structure being electrically connected to the semiconductor die or component and vertically oriented integrated capacitor; and
a second interconnect structure formed over a second side of the encapsulant opposite the first side of the encapsulant.
18. The semiconductor device of claim 17 , wherein the first interconnect structure comprises an integrated passive device.
19. The semiconductor device of claim 17 , further comprising a second semiconductor die mounted to the first interconnect structure.
20. A semiconductor device, comprising:
a carrier;
a semiconductor die or component mounted over the carrier; and
a vertically oriented integrated metal-insulator-metal (MIM) capacitor disposed over the carrier, wherein an active surface of the semiconductor die or component is perpendicular to a first electrode and a second electrode of the vertically oriented integrated MIM capacitor, the first electrode comprising a conductive pillar having a cross-section in a plane that is perpendicular to the active surface of the semiconductor die or component with a height of the cross-section being greater than a width of the cross-section.
21. The semiconductor device of claim 20 , wherein the second electrode comprises a conformal conductive layer disposed over the conductive pillar.
22. The semiconductor device of claim 21 , wherein the vertically oriented integrated metal-insulator-metal (MIM) capacitor further comprises a conformal insulating layer disposed between the conductive pillar and the conformal conductive layer.
23. A semiconductor device, comprising:
a carrier;
a semiconductor die or component mounted over the carrier;
a vertically oriented integrated metal-insulator-metal (MIM) capacitor disposed over the carrier, wherein an active surface of the semiconductor die or component is perpendicular to a first electrode and a second electrode of the vertically oriented integrated MIM capacitor;
an encapsulant deposited over the semiconductor die or component and around the vertically oriented integrated MIM capacitor;
a first interconnect structure formed over a first side of the encapsulant, the first interconnect structure being electrically connected to the semiconductor die or component and the vertically oriented integrated MIM capacitor; and
a second interconnect structure formed over a second side of the encapsulant opposite the first side of the encapsulant.