Semiconductor device and method of forming RF FEM and RF transceiver in semiconductor package
A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.
1. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a low pass filter, first balun, and second balun formed on a first surface of the first semiconductor die;
providing a second semiconductor die including a bandpass filter;
attaching the second semiconductor die to the first semiconductor die over the first surface of the first semiconductor die;
providing a third semiconductor die including a radio frequency (RF) switch;
attaching the third semiconductor die to the first semiconductor die over the first surface of the first semiconductor die adjacent to the second semiconductor die;
providing a fourth semiconductor die including an RF transceiver; and
attaching the fourth semiconductor die to a second surface of the first semiconductor die opposite the first surface of the first semiconductor die.
2. The method of claim 1 , further including:
providing a substrate; and
disposing the first, second, third, and fourth semiconductor die over the substrate.
3. The method of claim 2 , further including:
forming a plurality of first bond wires between the second semiconductor die and first semiconductor die;
forming a plurality of second bond wires between the third semiconductor die and first semiconductor die; and
forming a plurality of third bond wires between the first semiconductor die and substrate.
4. The method of claim 1 , wherein the first semiconductor die includes a high resistivity silicon substrate.
5. The method of claim 1 , wherein forming the low pass filter further includes:
forming a first conductive trace wound to exhibit inductive properties and coupled to an input of the low pass filter; and
forming a second conductive trace wound to exhibit inductive properties and coupled to the first conductive trace and an output of the low pass filter.
6. The method of claim 1 , wherein forming the bandpass filter further includes:
forming a first conductive trace wound to exhibit inductive properties and coupled to an input of the bandpass filter;
forming a second conductive trace wound to exhibit inductive properties and coupled to the first conductive trace and a ground terminal; and
forming a third conductive trace wound to exhibit inductive properties and coupled to the second conductive trace and an output of the bandpass filter.
7. The method of claim 1 , wherein the second semiconductor die includes a gallium arsenide substrate.
8. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a low pass filter and balun formed on a first surface of the first semiconductor die;
providing a second semiconductor die including a bandpass filter;
attaching the second semiconductor die to the first semiconductor die over the first surface of the first semiconductor die; and
attaching a third semiconductor die to the first semiconductor die over the first surface of the first semiconductor die adjacent to the second semiconductor die.
9. The method of claim 8 , further including:
providing a fourth semiconductor die including an RF transceiver; and
disposing the first, second, and third semiconductor die over the fourth semiconductor die.
10. The method of claim 8 , further including:
providing a substrate; and
disposing the first, second, and third semiconductor die over the substrate.
11. The method of claim 8 , wherein the first semiconductor die includes a high resistivity substrate.
12. The method of claim 8 , further including forming a plurality of first bond wires between the second semiconductor die and first semiconductor die.
13. The method of claim 8 , wherein forming the low pass filter further includes:
forming a first conductive trace wound to exhibit inductive properties and coupled to an input of the low pass filter; and
forming a second conductive trace wound to exhibit inductive properties and coupled to the first conductive trace and an output of the low pass filter.
14. The method of claim 8 , wherein forming the bandpass filter further includes:
forming a first conductive trace wound to exhibit inductive properties and coupled to an input of the bandpass filter;
forming a second conductive trace wound to exhibit inductive properties and coupled to the first conductive trace and a ground terminal; and
forming a third conductive trace wound to exhibit inductive properties and coupled to the second conductive trace and an output of the bandpass filter.
15. The method of claim 8 , wherein the second semiconductor die includes a gallium arsenide substrate.
16. The method of claim 8 , wherein the third semiconductor die includes a radio frequency (RF) switch.
17. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a low pass filter and balun;
providing a second semiconductor die including a radio frequency (RF) circuit; and
disposing the second semiconductor die over the first semiconductor die.
18. The method of claim 17 , further including:
providing a third semiconductor die including an RF transceiver; and
disposing the first and second semiconductor die over the third semiconductor die.
19. The method of claim 18 , further including:
providing a substrate; and
disposing the first, second, and third semiconductor die over the substrate.
20. The method of claim 17 , wherein the second semiconductor die includes a gallium arsenide substrate.
21. The method of claim 17 , wherein the first semiconductor die includes a high resistivity substrate.
22. The method of claim 17 , further including forming a plurality of first bond wires between the second semiconductor die and first semiconductor die.
23. The method of claim 17 , wherein the RF circuit includes a bandpass filter.
24. The method of claim 23 , wherein forming the bandpass filter further includes:
forming a first conductive trace wound to exhibit inductive properties and coupled to an input of the bandpass filter;
forming a second conductive trace wound to exhibit inductive properties and coupled to the first conductive trace and a ground terminal; and
forming a third conductive trace wound to exhibit inductive properties and coupled to the second conductive trace and an output of the bandpass filter.
25. The method of claim 17 , further including disposing a third semiconductor die including an RF switch over the first semiconductor die.
26. A semiconductor device, comprising:
a first semiconductor die including a low pass filter and balun formed on a first surface of the first semiconductor die;
an adhesive layer formed over the first surface of the first semiconductor die; and
a second semiconductor die including a bandpass filter mounted to the first surface of the first semiconductor die over the adhesive layer.
27. The semiconductor device of claim 26 , further including:
a third semiconductor die including a radio frequency (RF) switch disposed over the first semiconductor die; and
a fourth semiconductor die including an RF transceiver, wherein the first, second, and third semiconductor die are disposed over the fourth semiconductor die.
28. The semiconductor device of claim 26 , further including a substrate disposed over the first semiconductor die opposite the second semiconductor die.
29. The semiconductor device of claim 26 , wherein the second semiconductor die includes a gallium arsenide substrate.
30. The semiconductor device of claim 26 , wherein the first semiconductor die includes a high resistivity silicon substrate.