Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP
A semiconductor device has a temporary carrier. A semiconductor die is oriented with an active surface toward, and mounted to, the temporary carrier. An encapsulant is deposited with a first surface over the temporary carrier and a second surface, opposite the first surface, is deposited over a backside of the semiconductor die. The temporary carrier is removed. A portion of the encapsulant in a periphery of the semiconductor die is removed to form an opening in the first surface of the encapsulant. An interconnect structure is formed over the active surface of the semiconductor die and extends into the opening in the encapsulant layer. A via is formed and extends from the second surface of the encapsulant to the opening. A first bump is formed in the via and electrically connects to the interconnect structure.
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over a periphery of the semiconductor die including a stepped portion of the encapsulant extending across a surface of the semiconductor die;
an interconnect structure formed over the semiconductor die opposite the stepped portion of the encapsulant; and
a via formed in the encapsulant extending from a first surface of the encapsulant to the interconnect structure.
2. The semiconductor device of claim 1 , wherein the via that extends from the first surface of the encapsulant to the interconnect structure includes a sidewall with a vertical or tapered profile.
3. The semiconductor device of claim 1 , further including a crack stop layer deposited over the semiconductor die.
4. The semiconductor device of claim 1 , further including a backside alignment unit disposed in the periphery of the semiconductor die.
5. The semiconductor device of claim 1 , further including a plurality of conductive vias that extend from the first surface of the encapsulant to a second surface of the encapsulant and organized as an array with multiple rows.
6. A semiconductor device, comprising:
a semiconductor die;
an insulating layer formed over a surface of the semiconductor die;
a preventative layer extending across the insulating layer over the semiconductor die to reduce formation of cracks with the insulating layer between the semiconductor die and the preventative layer; and
an interconnect structure formed over the semiconductor die.
7. The semiconductor device of claim 6 , further including a conductive material disposed over a periphery of the semiconductor die.
8. The semiconductor device of claim 6 , further including an encapsulant deposited over the semiconductor die wherein a surface of the encapsulant includes a step with a vertical offset.
9. The semiconductor device of claim 6 , further including a temporary planarization and protection layer deposited over the surface of the semiconductor die.
10. The semiconductor device of claim 6 , further including back grinding tape deposited over the interconnect structure.
11. A semiconductor device, comprising:
a semiconductor die;
an encapsulant disposed over the semiconductor die;
a bump disposed within a via of the encapsulant over a periphery of the semiconductor die;
a conductive pillar disposed over the bump; and
an interconnect structure formed over the semiconductor die.
12. The semiconductor device of claim 11 , wherein the interconnect structure includes a solder bump.
13. The semiconductor device of claim 11 , further including back grinding tape deposited over the interconnect structure.
14. A semiconductor device, comprising:
a semiconductor die;
a first conductive layer disposed over the semiconductor die including a first portion of the first conductive layer isolated from a second portion of the first conductive layer; and
an interconnect structure coupled to the first conductive layer and disposed between the first and second portions of the first conductive layer.
15. The semiconductor device of claim 14 , wherein the interconnect structure includes a solder bump disposed over the first conductive layer.
16. The semiconductor device of claim 14 , further including an encapsulant disposed around the semiconductor die.
17. The semiconductor device of claim 14 , further including a temporary planarization and protection layer deposited over a surface of the semiconductor die.
18. The semiconductor device of claim 14 , further including back grinding tape deposited over the interconnect structure.
19. The semiconductor device of claim 1 , wherein the encapsulant has undergone a back grinding operation to reduce a thickness of the semiconductor device.
20. The semiconductor device of claim 1 , wherein the semiconductor die includes a pre-applied adhesive disposed over the semiconductor die.