Three dimensional non-volatile storage with three device driver for row select
A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.
1. A non-volatile storage system, comprising:
a monolithic three dimensional memory array of memory cells arranged in blocks, the memory array includes gaps between blocks;
a plurality of word lines connected to the memory cells;
a plurality of vertically oriented bit lines connected to the memory cells;
a plurality of global bit lines;
a plurality of vertically oriented select devices above and not in the substrate that are connected to the vertically oriented bit lines and the global bit lines and selectively put the vertically oriented bit lines in communication with the global bit lines;
a plurality of row select lines connected to and for controlling the vertically oriented select devices; and
a plurality of row select line drivers that are connected to and drive the row select lines, each of the row select line drivers includes multiple components that are distributed in different gaps between blocks.
2. The non-volatile storage system of claim 1 , wherein:
each row select line driver includes multiple components that are distributed in adjacent gaps between blocks.
3. The non-volatile storage system of claim 1 , wherein:
each row select line driver includes three transistors distributed in different gaps between blocks.
4. The non-volatile storage system of claim 1 , wherein:
components for different select line drives are positioned in interleaved gaps between blocks.
5. The non-volatile storage system of claim 1 , wherein:
only one signal line orthogonal to the row select lines is located in the gaps.
6. The non-volatile storage system of claim 1 , wherein:
with respect to the row select line drivers, each of the gaps includes only one component from one of the row select line drivers.
7. The non-volatile storage system of claim 1 , wherein:
the source input of each row select line driver is one of the global word lines.
8. The non-volatile storage system of claim 1 , further comprising:
power lines positioned in gaps only between other adjacent gaps with PMOS transistors; and
ground lines positioned in gaps only between other adjacent gaps with NMOS transistors.
9. The non-volatile storage system of claim 1 , wherein:
unselected global bit lines are biased at a level above ground.
10. The non-volatile storage system of claim 1 , wherein:
the row select line drivers are in the substrate;
the memory cells are above and not in the substrate;
the vertically oriented bit lines are above and not in the substrate; and
the vertically oriented select devices are above and not in the substrate.
11. The non-volatile storage system of claim 1 , wherein:
the gaps between block are word line breaks; and
each of the row select line drivers includes three transistors positioned in different word line breaks.
12. The non-volatile storage system of claim 1 , wherein:
each of the row select line drivers include a first nmos transistor, a second nmos transistor and a pmos transistor;
the first nmos transistor is connected between an associated global word line and an associated row select line;
the pmos transistor is connected between the associated global word line and the associated row select line; and
the second nmos transistor is connected between the associated row select line and ground.
13. The non-volatile storage system of claim 12 , wherein:
when the associated global word line is selected and the associated row select line is selected, current flows from the associated global word line to the associated row select line through the pmos transistor;
when the associated global word line is not selected and the associated row select line is selected, the associated global word line pulls down the associated row select line to ground through the first nmos transistor; and
when the associated row select line is not selected, the associated row select line is pulled down through the second nmos transistor.
14. The non-volatile storage system of claim 1 , wherein:
the word lines include groups of word lines, each group of word lines includes multiple word lines connected together; and
a row select line is connected to a set of the vertically oriented select devices that are connected to a set of the vertically oriented bit lines that are connected to memory cells also connected to only one word line of a particular group of word lines.
15. The non-volatile storage system of claim 1 , wherein:
each row select line connects to a subset of the select devices for multiple blocks; and
the memory cells in combination with the vertically oriented bit lines and the word lines form a continuous mesh.
16. A method for operating a non-volatile storage system that includes a monolithic three dimensional memory array of memory cells arranged in blocks, the memory array includes gaps between blocks, the system includes a plurality of word lines connected to the memory cells and a plurality of vertically oriented bit lines connected to the memory cells, the method comprising:
driving signals on the word lines and global bit lines; and
selectively connecting the global bit lines to the vertically oriented bit lines using vertically oriented select devices controlled by row select lines, the selectively connecting includes driving the row select lines using row select line drivers, using a particular row select line driver includes controlling components that are distributed in different gaps between the blocks.
17. The method of claim 16 , wherein:
when the associated global word line is selected and the associated row select line is selected, current flows from the associated global word line to the associated row select line through the pmos transistor;
when the associated global word line is not selected and the associated row select line is selected, the associated global word line pulls down the associated row select line to ground through the first nmos transistor; and
when the associated row select line is not selected, the associated row select line is pulled down through the second nmos transistor.
18. The method of claim 16 , wherein:
with respect to the row select line drivers, each of the gaps only includes one component from one row select line driver.
19. The method of claim 16 , wherein:
the row select line drivers are in the substrate;
the memory cells are above and not in the substrate;
the vertically oriented bit lines are above and not in the substrate; and
the vertically oriented select devices are above and not in the substrate.
20. The method of claim 16 , wherein:
each of the row select line drivers include a first nmos transistor, a second nmos transistor and a pmos transistor;
the first nmos transistor is connected between an associated global word line and an associated row select line;
the pmos transistor is connected between the associated global word line and the associated row select line; and
the second nmos transistor is connected between the associated row select line and ground.
21. A non-volatile storage system, comprising:
a monolithic three dimensional memory array of memory cells arranged in blocks;
a plurality of word lines connected to the memory cells, the word lines are arranged in groups of word lines with word lines in each group being connected to each other, word lines are connected to memory cells in two neighboring blocks, the memory array includes word line breaks between blocks;
a plurality of vertically oriented bit lines connected to the memory cells, the vertically oriented bit lines are above and not in the substrate;
a plurality of global bit lines;
a plurality of select devices above and not in the substrate that are connected to the vertically oriented bit lines and the global bit lines and selectively put the vertically oriented bit lines in communication with the global bit lines;
a plurality of row select lines connected to and for controlling the select devices; and
row select line drivers that are connected to and drive row select lines, each row select line driver includes multiple components that are distributed in different gaps between the blocks, each row select line is connected to a set of the select devices that are connected to a set of the vertically oriented bit lines that are connected to memory cells also connected to one word line of a particular group of word lines.
22. The non-volatile storage system of claim 21 , wherein:
the select devices are vertically oriented select devices that are above and not in the substrate; and
each of the row select line drivers includes three transistors.
23. The non-volatile storage system of claim 21 , wherein:
each of the row select line drivers include a first nmos transistor, a second nmos transistor and a pmos transistor;
the first nmos transistor is connected between an associated global word line and an associated row select line;
the pmos transistor is connected between the associated global word line and the associated row select line;
the second nmos transistor is connected between the associated row select line and ground.
24. The non-volatile storage system of claim 23 , wherein:
when the associated global word line is selected and the associated row select line is selected, current flows from the associated global word line to the associated row select line through the pmos transistor;
when the associated global word line is not selected and the associated row select line is selected, the associated global word line pulls down the associated row select line to ground through the first nmos transistor; and
when the associated row select line is not selected, the associated row select line is pulled down through the second nmos transistor.