Semiconductor transistors having reduced distances between gate electrode regions

1. A semiconductor structure, comprising:

a semiconductor substrate which includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface, wherein the semiconductor substrate comprises a first semiconductor body region and a second semiconductor body region;

a first gate dielectric region and a second gate dielectric region on top of the first and second semiconductor body regions, respectively;

a first gate electrode region and a second gate electrode region, wherein the first gate electrode region is on top of and in direct physical contact with a top surface of the first gate dielectric region, and wherein the second gate electrode region is on top of and in direct physical contact with a top surface of the second gate dielectric region;

a gate divider region, wherein the gate divider region is in direct physical contact with the first and second gate electrode regions, and wherein the gate divider region does not overlap the first and second gate electrode regions in the reference direction;

a shallow trench isolation (STI) region, wherein the STI region is in direct physical contact with the first and second semiconductor body regions and the gate divider region, wherein the first and second semiconductor body regions do not overlap the STI region in the reference direction, wherein the entire gate divider region overlaps the STI region in the reference direction, and wherein a top surface of the STI region is coplanar with a bottom surface of the gate divider region, the top surface of the first gate dielectric region and the top surface of the second gate dielectric region.

2. The structure of claim 1 , wherein a top surface of the gate divider region and top surfaces of the first and second gate electrode regions are essentially coplanar.

3. The structure of claim 1 , wherein the gate divider region comprises a dielectric material.

4. The structure of claim 1 , wherein the STI region comprises a dielectric material.

5. The structure of claim 1 ,

wherein the first semiconductor body region comprises a first source/drain region and a second source/drain region such that the first gate electrode region is disposed between the first and second source/drain regions, and

wherein the first and second source/drain regions and the first gate electrode region form a first transistor.

6. The structure of claim 5 ,

wherein the second semiconductor body region comprises a third source/drain region and a fourth source/drain region such that the second gate electrode region is disposed between the third and fourth source/drain regions, and

wherein the third and fourth source/drain regions and the second gate electrode region form a second transistor.

7. The structure of claim 2 , wherein the first and second semiconductor body regions are in direct physical contact with a bottom surface of the first and second gate dielectric regions, respectively.

8. The structure of claim 7 , wherein the gate divider region comprises silicon nitride.

9. The structure of claim 8 , further comprising means for forming the gate divider region.

10. The structure of claim 1 , wherein the gate divider region comprises silicon nitride.

11. The structure of claim 10 , further comprising means for forming the gate divider region.

12. The structure of claim 1 , wherein the first semiconductor body region and the first gate dielectric region have a same first width in a width direction that is perpendicular to the reference direction, and wherein the second semiconductor body region and the second gate dielectric region have a same second width in the width direction.

13. The structure of claim 1 , wherein the gate divider region is separated from the first gate dielectric region by a first finite distance and from the second gate dielectric region by a second finite distance.