Read only memory (ROM) with redundancy
A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.
1. A read-only memory (ROM) with redundancy, comprising:
a programmable array coupled to a repair circuit having one or more redundant repairs, the one or more redundant repairs comprise a word address match logic block, a data I/O address, and a tri-state buffer, wherein:
the word address match logic block is provided to the tri-state buffer as a control input;
the data I/O address is provided to the tri-state buffer as an input;
an output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices; and
one or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.
2. The ROM with redundancy of claim 1 , wherein the word address match logic block compares a ROM read address with a repair location word address stored in the programmable array, and outputs an enable logic when the ROM read address and the repair location word address are equal.
3. A read-only memory (ROM) with redundancy, comprising:
a programmable array coupled to a repair circuit having one or more redundant repairs, the one or more redundant repairs comprise a word address match logic block, a data I/O address, a tri-state buffer, a data value, and a second tri-state buffer, wherein:
the word address match logic block is provided to the tri-state buffer as a control input;
the data I/O address is provided to the tri-state buffer as an input;
an output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices;
one or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices;
the data value is provided as an input to the second tri-state buffer; and
the word address match logic block is provided as a control input to the second tri-state buffer.
4. The ROM with redundancy of claim 3 , wherein:
the one or more logic devices is one or more 2-to-1 multiplexers; and
an output of the second tri-state buffer is provided as a unique select signal to a respective one of the one or more 2-to-1 multiplexers.
5. The ROM with redundancy of claim 4 , wherein, during operation:
when the output of the second tri-state buffer is an unselected logic, an output of at least one of the one or more 2-to-1 multiplexers is a value of the data output of the ROM bit cell array;
the output of the first tri-state buffer is pulled down to a low logic when the first tri-state buffer and the second tri-state buffer are unasserted to avoid floating nodes; and
when the output of the second tri-state buffer is a selected logic, the output of at least one of the one or more 2-to-1 multiplexers is a value of the output of the tri-state buffer.
6. The ROM with redundancy of claim 4 , wherein:
a respective multiplexer of the one or more 2-to-1 multiplexers which is coupled to a first data output of the one or more data outputs of the ROM bit cell array represents a least significant bit; and
a respective multiplexer of the one or more 2-to-1 multiplexers which is coupled to a last data output of the one or more data outputs of the ROM bit cell array represents a most significant bit.
7. The ROM with redundancy of claim 1 , wherein:
the one or more logic devices is one or more two-way AND gates;
the output of the tri-state buffer for each of the one or more redundant repairs is provided as a first input to a respective one of the one or more two-way AND gates; and
the one or more data outputs of the ROM bit cell array are provided as a second input to a respective one of the one or more two-way AND gates.
8. The ROM with redundancy of claim 7 , wherein the repair circuit drives an output of the one or more two-way AND gates to a low logic.
9. A read-only memory (ROM) with redundancy, comprising:
a programmable array coupled to a repair circuit having one or more redundant repairs, the one or more redundant repairs comprise a word address match logic block, a data I/O address, and a tri-state buffer, wherein:
the word address match logic block is provided to the tri-state buffer as a control input;
the data I/O address is provided to the tri-state buffer as an input;
an output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices;
one or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices;
the one or more logic devices is one or more two-way AND gates;
the output of the tri-state buffer for each of the one or more redundant repairs is provided as a first input to a respective one of the one or more two-way AND gates;
the one or more data outputs of the ROM bit cell array are provided as a second input to a respective one of the one or more two-way AND gates; and
the repair circuit drives an output of the one or more two-way AND gates to a low logic wherein, during operation:
when an output of the tri-state buffer is a low logic, the output of the one or more two-way AND gates is driven to a low logic; and
when the output of the tri-state buffer is a high logic, the output of one or more two-way AND gates is a value of the data output of the ROM bit cell array.
10. The ROM with redundancy of claim 1 , wherein:
the one or more logic devices is one or more exclusive-or (XOR) gates;
the output of the tri-state buffer for each of the one or more redundant repairs is provided as a first input to a respective one of the one or more XOR gates; and
the one or more data outputs of the ROM bit cell array is provided as a second input to a respective one of the one or more XOR gates.
11. The ROM with redundancy of claim 10 , wherein, during operation, when an output of the tri-state buffer is a high logic, the one or more XOR gates invert the data output of the ROM bit cell array.
12. The ROM with redundancy of claim 10 , wherein the repair circuit drives stuck-at-1 bits to a low logic or stuck-at-0 bits to a high logic.
13. The ROM with redundancy of claim 1 , wherein the redundant repair further comprises a second tri-state buffer and the word address match logic block is provided to the second tri-state buffer as a control input.