Semiconductor device and method of depositing underfill material with uniform flow rate
View Patent ↗A semiconductor device has a substrate and insulating layer formed over a surface of the substrate. A first conductive layer is formed over the surface of the substrate. A second conductive layer is formed over an opposing surface of the substrate. A conductive via is formed through the substrate. An opening is formed in the insulating layer while leaving the first conductive layer intact. The opening narrows with a non-linear side or linear side. The opening can have a rectangular shape. A semiconductor die is mounted over the surface of the substrate. An underfill material is deposited between the semiconductor die and substrate. The opening in the insulating layer reduces a flow rate of the underfill material proximate to the opening. The flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming an insulating layer over a first surface of the substrate;
forming a plurality of openings in the insulating layer;
providing a semiconductor die including a first region with a first bump density and a second region with a second bump density less than the first bump density;
disposing the semiconductor die over the first surface of the substrate; and
depositing an underfill material between the semiconductor die and substrate, wherein the openings in the insulating layer reduce a flow rate of the underfill material proximate to the openings.
2. The method of claim 1 , wherein the flow rate of the underfill material proximate to the openings is substantially equal to a flow rate of the underfill material away from the openings.
3. The method of claim 1 , further including:
forming a first conductive layer over the first surface of the substrate; and
forming the opening in the insulating layer while leaving the first conductive layer intact.
4. The method of claim 3 , further including:
forming a second conductive layer over a second surface of the substrate opposite the first surface of the substrate; and
forming a conductive via through the substrate electrically connected to the first conductive layer and second conductive layer.
5. The method of claim 1 , further including forming the openings to narrow with a non-linear side.
6. The method of claim 1 , further including forming the openings to narrow with a linear side.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming an opening in the substrate;
providing a semiconductor die;
disposing the semiconductor die over the substrate; and
depositing an underfill material between the semiconductor die and substrate, wherein the opening in the substrate reduces a flow rate of the underfill material proximate to the opening.
8. The method of claim 7 , wherein the flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.
9. The method of claim 7 , wherein providing the substrate further includes:
providing a base material;
forming an insulating layer over a first surface of the base material; and
forming a first conductive layer over the first surface of the base material.
10. The method of claim 9 , further including:
forming a second conductive layer over a second surface of the base material opposite the first surface of the base material; and
forming a conductive via through the substrate electrically connected to the first conductive layer and second conductive layer.
11. The method of claim 7 , further including forming the opening to narrow with a non-linear side.
12. The method of claim 7 , further including forming the opening to narrow with a linear side.
13. The method of claim 7 , further including forming the opening to include a rectangular shape.
14. A method of making a semiconductor device, comprising:
providing a substrate;
removing a portion of a first surface of the substrate to form an opening while leaving a second surface of the substrate opposite the first surface intact;
disposing a semiconductor die over the substrate; and
depositing an underfill material between the semiconductor die and substrate and into the opening in the substrate, wherein the opening in the substrate reduces a flow rate of the underfill material proximate to the opening.
15. The method of claim 14 , wherein the flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.
16. The method of claim 14 , wherein providing the substrate further includes:
providing a base material;
forming an insulating layer over a surface of the base material; and
forming a conductive layer over the surface of the base material.
17. The method of claim 14 , further including forming the opening to narrow with a non-linear side.
18. The method of claim 14 , further including forming the opening to narrow with a linear side.
19. The method of claim 14 , further including forming the opening to include a rectangular shape.
20. A method of making a semiconductor device, comprising:
providing a substrate;
forming an opening partially through the substrate;
disposing a semiconductor die over the substrate; and
depositing an underfill material between the semiconductor die and substrate, wherein a flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.
21. The method of claim 20 , wherein providing the substrate further includes:
providing a base material;
forming an insulating layer over a surface of the base material; and
forming a conductive layer over the surface of the base material.
22. The method of claim 20 , further including forming the opening to narrow with a non-linear side.
23. The method of claim 20 , further including forming the opening to narrow with a linear side.
24. The method of claim 9 , wherein forming the opening in the substrate further includes forming the opening in the insulating layer while leaving the first conductive layer intact.
25. The method of claim 16 , wherein removing the portion of the substrate further includes removing a portion of the insulating layer while leaving the conductive layer intact.
26. The method of claim 20 , wherein forming the opening in the substrate further includes forming the opening in the insulating layer while leaving the conductive layer intact.