Memory decoder circuit
A decoder circuit includes high voltage and low voltage transistors. The decoder circuit uses the high voltage transistors during modify operations to provide a high voltage, e.g., a boosted voltage, to memory cells to change memory cell status or perform other operations. The decoder circuit uses the low voltage transistors during read operations.
1. A memory circuit comprising:
a plurality of memory cells arranged into a plurality of rows and a plurality of columns;
a decoder circuit coupled to the plurality of memory cells, the decoder circuit comprising:
first and second high voltage transistors coupled to a boosted voltage node;
first and second low voltage transistors coupled to a voltage supply node, wherein the boosted voltage node is configured to provide a voltage higher than a supply voltage at the voltage supply node; and
a middle transistor coupled between the first and second high voltage transistors and the first and second low voltage transistors.
2. The memory circuit of claim 1 , further comprising a control circuit coupled to a gate of the third high voltage transistor, the control circuit configured to perform operations comprising:
determining that the memory circuit is performing a read operation;
controlling the middle transistor so that the middle transistor allows current to flow from the first and second high voltage transistors to the first and second low voltage transistors;
determining that the memory circuit is performing a modify operation; and
controlling the middle transistor so that the middle transistor substantially blocks current from flowing from the first and second high voltage transistors to the first and second low voltage transistors.
3. The memory circuit of claim 1 , wherein the first and second high voltage transistors are configured to sustain a first voltage, and wherein the first and second low voltage transistors are configured to sustain a second voltage lower than the first voltage.
4. The memory circuit of claim 1 , wherein the middle transistor is configured to sustain the voltage at the boosted voltage node.
5. The memory circuit of claim 1 , wherein the first and second high voltage transistors are configured to switch at a first switching speed, and wherein the first and second low voltage transistors are configure to switch at a second switching speed faster than the first switching speed.
6. The memory circuit of claim 1 , wherein the first and second high voltage transistors are coupled to a charge pump coupled to the voltage supply node.
7. The memory circuit of claim 1 , wherein the first high voltage transistor includes a drain coupled to the boosted voltage node and a source coupled to a drain of the second high voltage transistor, and wherein the first low voltage transistor includes a source coupled to the voltage supply node and a drain coupled to a drain of the second low voltage transistor.
8. The memory circuit of claim 7 , wherein the source of the first high voltage transistor is coupled to a source of the middle transistor.
9. The memory circuit of claim 8 , wherein the drain of the first low voltage transistor is coupled to a drain of the middle transistor.
10. The memory circuit of claim 9 , wherein the source of the middle transistor is coupled to a decoder output node coupled to the plurality of memory cells.
11. A method performed by a control circuit for a decoder circuit of a memory circuit, the method comprising:
determining that the memory circuit is performing a read operation;
controlling a middle transistor so that the middle transistor allows current to flow from first and second high voltage transistors to first and second low voltage transistors;
determining that the memory circuit is performing a modify operation; and
controlling the middle transistor so that the middle transistor substantially blocks current from flowing from the first and second high voltage transistors to the first and second low voltage transistors.
12. The method of claim 11 , wherein controlling the middle transistor comprises providing a control signal to a gate of the middle transistor.
13. The method of claim 11 , further comprising, during the read operation, controlling the first and second low voltage transistors to read a selected memory cell by applying a supply voltage to a decoder output node coupled to a source of the middle transistor.
14. The method of claim 11 , further comprising, during the modify operation, controlling the first and second high voltage transistors to modify a selected memory cell by applying a boosted voltage to a decoder output node coupled to a source of the middle transistor.
15. The method of claim 11 , wherein the first and second high voltage transistors are configured to sustain a first voltage, and wherein the first and second low voltage transistors are configured to sustain a second voltage lower than the first voltage.
16. The method of claim 11 , wherein the first and second high voltage transistors are configured to switch at a first switching speed, and wherein the first and second low voltage transistors are configure to switch at a second switching speed faster than the first switching speed.