Semiconductor device and method of backgrinding and singulation of semiconductor wafer while reducing kerf shifting and protecting wafer surfaces
A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.
1. A semiconductor device, comprising:
a semiconductor wafer including a plurality of semiconductor die;
a trench formed through a saw street of the semiconductor wafer between the semiconductor die;
a protective coating disposed over a first surface of the semiconductor wafer and filling the trench between the semiconductor die;
a die attach film disposed over a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer; and
a modified region susceptible to fracture formed in the die attach film and aligned with the saw street between the semiconductor die.
2. The semiconductor device of claim 1 , wherein the protective coating extends to the second surface of the semiconductor wafer.
3. The semiconductor device of claim 1 , further including an interconnect structure formed over the first surface of the semiconductor wafer.
4. The semiconductor device of claim 1 , wherein the protective coating is water soluble.
5. A semiconductor device, comprising:
a semiconductor wafer including a plurality of semiconductor die;
a trench formed through a saw street of the semiconductor wafer between the semiconductor die;
a protective coating completely covering a first surface of the semiconductor wafer and filling the trench between the semiconductor die; and
a die attach film disposed over a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer.
6. The semiconductor device of claim 5 , wherein the protective coating is water soluble.
7. The semiconductor device of claim 5 , further including an interconnect structure formed over the first surface of the semiconductor wafer.
8. The semiconductor device of claim 5 , further including a modified region formed in the die attach film and aligned with the saw street.
9. A semiconductor device, comprising:
a semiconductor wafer including a plurality of semiconductor die;
a trench formed through a first surface of the semiconductor wafer; and
a protective coating completely covering the first surface of the semiconductor wafer and extending into the trench.
10. The semiconductor device of claim 9 , further including a die attach film disposed over a second surface of the semiconductor wafer opposite the first surface.
11. The semiconductor device of claim 9 , wherein the protective coating fills the trench.
12. The semiconductor device of claim 9 , further including a lamination tape disposed over the protective coating.
13. The semiconductor device of claim 10 , further including a modified region susceptible to fracture formed in the die attach film.
14. The semiconductor device of claim 9 , wherein the protective coating is water soluble.