Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures
View Patent ↗A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive via partially through a surface of the substrate to a depth less than a thickness of the substrate;
forming an integrated passive device (IPD) over the substrate; and
removing a portion of the substrate opposite the IPD to expose the conductive via.
2. The method of claim 1 , further including depositing an encapsulant over the substrate and IPD.
3. The method of claim 1 , wherein the IPD includes a resistor, capacitor, or inductor.
4. The method of claim 1 , wherein forming the IPD includes:
forming a first conductive layer over the substrate;
forming an insulating layer over the first conductive layer; and
forming a second conductive layer over the insulating layer.
5. The method of claim 1 , wherein forming the IPD includes forming a conductive layer over the substrate and wound to exhibit an inductive property.
6. The method of claim 1 , further including disposing a semiconductor die over the substrate.
7. A method of making a semiconductor device, comprising:
providing a substrate including an interconnect structure disposed partially through the substrate;
forming an integrated passive device (IPD) over a first surface of the substrate; and
removing a portion of the substrate from a second surface of the substrate opposite the first surface to expose the interconnect structure.
8. The method of claim 7 , further including depositing an encapsulant over the substrate and IPD.
9. The method of claim 7 , further including disposing a semiconductor die over the substrate.
10. The method of claim 7 , wherein the IPD includes a resistor, capacitor, or inductor.
11. The method of claim 7 , further including:
forming an under bump metallization (UBM) layer over a surface of the substrate and electrically connected to the interconnect structure; and
forming a bump over the UBM layer.
12. The method of claim 7 , wherein forming the interconnect structure includes:
forming a via partially through the substrate; and
forming a first conductive layer over a sidewall of the via.
13. The method of claim 12 , wherein forming the interconnect structure further includes forming a second conductive layer over the first conductive layer.
14. A method of making a semiconductor device, comprising:
providing a substrate including an interconnect structure disposed partially through the substrate; and
disposing a first conductive layer over the substrate and into the interconnect structure to form a portion of an integrated passive device (IPD) over the substrate.
15. The method of claim 14 , further including removing a portion of the substrate opposite the IPD to expose the interconnect structure.
16. The method of claim 14 , further including depositing an encapsulant over the substrate and IPD.
17. The method of claim 14 , further including disposing a semiconductor die over the substrate.
18. The method of claim 14 , wherein the IPD includes a resistor, capacitor, or inductor.
19. The method of claim 14 , further including:
forming an under bump metallization (UBM) layer over a surface of the substrate and electrically connected to the interconnect structure; and
forming a bump over the UBM layer.
20. The method of claim 14 , wherein forming the interconnect structure includes:
forming a via partially through the substrate;
forming a second conductive layer over a sidewall of the via; and
forming a third conductive layer over the second conductive layer.
21. A semiconductor device, comprising:
a substrate including an interconnect structure formed partially through the substrate;
a first conductive layer disposed in the interconnect structure; and
a passive circuit element formed over the substrate.
22. The semiconductor device of claim 21 , further including a semiconductor die disposed over the substrate.
23. The semiconductor device of claim 21 , wherein the passive circuit element includes a resistor, capacitor, or inductor.
24. The semiconductor device of claim 21 , wherein the interconnect structure includes:
a via formed partially through the substrate;
a second conductive layer formed over a sidewall of the via; and
a third conductive layer formed over the second conductive layer.