Resistance-switching memory cell with multiple raised structures in a bottom electrode
View Patent ↗A reversible resistance-switching memory cell has multiple narrow, spaced apart bottom electrode structures. The raised structures can be formed by coating a bottom electrode layer with nano-particles and etching the bottom electrode layer. The raised structures can be independent or joined to one another at a bottom of the bottom electrode layer. A resistance-switching material is provided between and above the bottom electrode structure, followed by a top electrode layer. Or, insulation is provided between and above the bottom electrode structures, and the resistance-switching material and top electrode layer are above the insulation. Less than one-third of a cross-sectional area of each resistance-switching memory cell is consumed by the one or more raised structures. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.
1. A resistance-switching memory cell, comprising:
a substrate;
a plurality of raised structures in a bottom electrode layer above the substrate, wherein the plurality of raised structures are spaced apart from one another in a plurality of rows;
a resistance-switching material, wherein a top of each raised structure of the plurality of raised structures is in contact with the resistance-switching material; and
a top electrode above the resistance-switching material.
2. The resistance-switching memory cell of claim 1 , wherein:
the plurality of the raised structures are raised structures in a layer of doped polysilicon; and
adjacent raised structures of the plurality of raised structures are not joined to one another by portions of the layer of doped polysilicon.
3. The resistance-switching memory cell of claim 1 , wherein:
the plurality of the raised structures are raised structures in a layer of doped polysilicon; and
portions of the layer of doped polysilicon join adjacent raised structures of the plurality of raised structures to one another at a bottom of the bottom electrode layer.
4. The resistance-switching memory cell of claim 1 , wherein:
the resistance-switching material extends laterally adjacent to the plurality of raised structures and above the plurality of raised structures.
5. The resistance-switching memory cell of claim 1 , wherein:
the bottom electrode layer comprises doped polysilicon having a doping concentration of 1×10^18/cm^3 or higher.
6. The resistance-switching memory cell of claim 1 , wherein:
the resistance-switching material comprises a phase change material.
7. The resistance-switching memory cell of claim 1 , wherein:
the resistance-switching material comprises a metal oxide.
8. The resistance-switching memory cell of claim 1 , wherein:
each raised structure has a width of no more than 2-9 nm.
9. The resistance-switching memory cell of claim 1 , wherein:
the plurality of raised structures are uniformly spaced apart from one another in a first direction and in a second direction which is perpendicular the first direction.
10. The resistance-switching memory cell of claim 1 , wherein:
each row of the plurality of rows comprises multiple raised structures of the plurality of raised structures.
11. A resistance-switching memory device, comprising:
a substrate;
a bottom wiring layer on the substrate comprising spaced apart wires; and
a plurality of resistance-switching memory cells formed on the substrate and aligned with the spaced apart wires of the bottom wiring layer, wherein each resistance-switching memory cell comprises:
a plurality of pillars in a bottom electrode layer above the substrate, wherein each pillar has a top, and the plurality of pillars are spaced apart from one another in a first direction and in a second direction which is perpendicular the first direction,
a resistance-switching material, wherein the tops of the pillars are is in contact with the resistance-switching material and spaced apart from one another, and
a top electrode above the resistance-switching material.
12. The resistance-switching memory device of claim 11 , further comprising:
a top wiring layer comprising spaced apart wires aligned with, and in electrical contact with, rows of the top electrodes.
13. The resistance-switching memory device of claim 11 , further comprising:
a top wiring layer comprising spaced apart wires aligned with rows of the resistance-switching memory cells, the top electrodes are provided by portions of the spaced apart wires.
14. The resistance-switching memory device of claim 11 , wherein:
the resistance-switching material of each of the resistance-switching memory cells is separated from one another.
15. The resistance-switching memory device of claim 11 , wherein:
each pillar has a circular cross-section.
16. The resistance-switching memory device of claim 11 , wherein for each resistance-switching memory cell:
the plurality of pillars are uniformly spaced apart from one another in the first direction and in the second direction.
17. The resistance-switching memory device of claim 11 , wherein for each resistance-switching memory cell:
the plurality of pillars are spaced apart from one another in a plurality of rows.
18. The resistance-switching memory device of claim 11 , wherein for each resistance-switching memory cell:
the plurality of pillars are dispersed in the bottom electrode layer.
19. The resistance-switching memory device of claim 11 , wherein:
each resistance-switching memory cell comprises a pillar; and
the bottom electrode layer and the resistance-switching material of each resistance-switching memory cell are provided in the pillar of the resistance-switching memory cell.
20. The resistance-switching memory device of claim 19 , wherein:
each pillar has a circular cross-section.