Method and structure for forming a localized SOI finFET
Methods and structures for forming a localized silicon-on-insulator (SOI) finFET are disclosed. Fins are formed on a bulk substrate. Nitride spacers protect the fin sidewalls. A shallow trench isolation region is deposited over the fins. An oxidation process causes oxygen to diffuse through the shallow trench isolation region and into the underlying silicon. The oxygen reacts with the silicon to form oxide, which provides electrical isolation for the fins. The shallow trench isolation region is in direct physical contact with the fins and/or the nitride spacers that are disposed on the fins. Structures comprising bulk-type fins, SOI-type fins, and planar regions are also disclosed.
1. A semiconductor structure comprising:
a semiconductor substrate;
a first set of fins formed on the semiconductor substrate;
a second set of fins formed on the semiconductor substrate;
an oxide region formed within the semiconductor substrate below the second set of fins;
a bulk-type fin diode formed on the first set of fins; and
a SOI-type finFET formed on the second set of fins.
2. The semiconductor structure of claim 1 , further comprising a planar region disposed on the semiconductor substrate.
3. The semiconductor structure of claim 1 , wherein the first set of fins are N-doped, and further comprising:
a p-doped semiconductor region disposed on the first set of fins;
a dielectric layer disposed over the second set of fins; and
a metal gate disposed over the dielectric layer.
4. The semiconductor structure of claim 3 , wherein the dielectric layer comprises hafnium oxide.
5. The semiconductor structure of claim 1 , wherein the first set of fins are P-doped, and further comprising:
an n-doped semiconductor region disposed on the first set of fins;
a dielectric layer disposed over the second set of fins; and
a metal gate disposed over the dielectric layer.
6. A semiconductor structure comprising:
a semiconductor substrate;
a first set of fins formed on the semiconductor substrate;
a second set of fins formed on the semiconductor substrate; and
an oxide region formed within the semiconductor substrate below the second set of fins;
a planar region disposed on the semiconductor substrate;
a bulk-type finFET formed on the first set of fins;
a SOI-type finFET formed on the second set of fins; and
a diode formed on the planar region.
7. A semiconductor structure comprising:
a semiconductor substrate;
a first set of fins formed on the semiconductor substrate;
a second set of fins formed on the semiconductor substrate, wherein the first set of fins and second set of fins have a fin width;
an oxide region formed within the semiconductor substrate below the second set of fins; and
a planar region disposed on the semiconductor substrate, wherein the planar region has a width ranging from 10 to 30 times larger than the fin width;
a bulk-type finFET formed on the first set of fins;
a SOI-type finFET formed on the second set of fins; and
a diode formed on the planar region.
8. The semiconductor structure of claim 7 , further comprising a second oxide region disposed within the semiconductor substrate between the planar region and the first set of fins.
9. A semiconductor structure comprising:
a semiconductor substrate;
a first set of fins formed on the semiconductor substrate;
a second set of fins formed on the semiconductor substrate, wherein the first set of fins and second set of fins have a fin width;
an oxide region formed within the semiconductor substrate below the second set of fins; and
a planar region disposed on the semiconductor substrate, wherein the planar region has a width ranging from 10 to 30 times larger than the fin width;
a bulk-type finFET formed on the first set of fins;
a SOI-type finFET formed on the second set of fins; and
a transistor formed on the planar region.