Method and apparatus for plasma dicing a semi-conductor wafer
View Patent ↗The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
1. A method for plasma processing a substrate, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
loading a work piece onto said work piece support, said work piece having a support film, a frame and the substrate;
providing a cover ring above said work piece, said cover ring having at least one perforated region;
providing an electrostatic chuck within said work piece support, said electrostatic chuck having at least one clamping electrode, said clamping electrode overlapping said perforated region of said cover ring, said perforated region of said cover ring not overlapping an outer portion of the work piece, said outer portion of the work piece being outside of an outer most seal band of said electrostatic chuck;
generating a plasma using the plasma source; and
processing said work piece using the generated plasma.
2. The method according to claim 1 wherein said perforated region of said cover ring allowing plasma to contact the work piece outside a perimeter of the substrate.
3. A method for plasma processing a substrate, the method comprising:
providing process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
loading a work piece onto said work piece support, said work piece having a support film, a frame and the substrate;
providing a cover ring above said work piece, said cover ring having at least one perforated region, and at least one non-perforated region, said perforated region of said cover ring is not overlapping the work piece where the work piece is not in thermal contact with said work piece support;
generating a plasma using the plasma source; and
processing said work piece using the generated plasma.
4. The method according to claim 3 wherein said perforated region of said cover ring allowing plasma to contact the work piece.
5. A method for plasma processing a substrate, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
loading a work piece onto said work piece support, said work piece having a support film, a frame and the substrate;
providing a cover ring above said work piece, said cover ring having at least one perforated region, and at least one non-perforated region;
providing an electrostatic chuck within said work piece support, said electrostatic chuck having at least one clamping electrode, said clamping electrode overlapping said perforated region of said cover ring, said perforated region of said cover ring not overlapping an outer portion of the work piece, said outer portion of the work piece being outside of an outer most seal band of said electrostatic chuck;
generating a plasma using the plasma source; and
processing said work piece using the generated plasma.
6. The method according to claim 5 wherein said non-perforated region of said cover ring preventing plasma from contacting the work piece overlapped by said non-perforated region of said cover ring.