Charged particle beam apparatus, thin film forming method, defect correction method and device forming method
View Patent ↗A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1 , a condenser lens electrode 2 , a blanking electrode 3 , a scanning electrode 4 , a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
1. A charged particle beam apparatus comprising:
a charged particle source;
a condenser lens electrode configured to condense a charged particle beam extracted from the charged particle source;
a blanking electrode configured to switch irradiation and non-irradiation of the charged particle beam;
a scanning electrode configured to scan and irradiate the charged particle beam;
a sample stage on which a sample is to be mounted;
a secondary charged particle detector configured to detect a secondary charged particle generated from the sample in response to irradiation of the sample with the charged particle beam;
a reservoir in which a silicon compound represented by a general formula (I) below is accommodated as a source gas; and
a gas gun configured to supply the source gas to a position of the sample that is irradiated with the charged particle beam,
Si n X m (I)
(where n is an integer of 3 or larger, m is an integer of n, 2n−2, 2n, or 2n+2, and X represents a hydrogen atom and/or a halogen atom).
2. The charged particle beam apparatus according to claim 1 , wherein the silicon compound is cyclopentasilane.
3. The charged particle beam apparatus according to claim 1 , wherein the charged particle beam is an electron beam.
4. The charged particle beam apparatus according to claim 1 , wherein the charged particle beam is an ion beam including one selected from gallium, gold, silicon, hydrogen, helium, neon, argon, xenon, oxygen, nitrogen, and carbon.
5. The charged particle beam apparatus according to claim 1 , further comprising a second gas supply system configured to supply a source gas different from the source gas.
6. A thin film forming method for forming a thin film by supplying a source gas to a sample and condensing a charged particle beam to irradiate the sample, the method comprising:
supplying a silicon compound represented by a general formula (I) below as the source gas to the sample, and irradiating the sample with the charged particle beam while condensing the charged particle beam,
Si n X m (I)
(where n is an integer of 3 or larger, m is an integer of n, 2n−2, 2n, or 2n+2, and X represents a hydrogen atom and/or a halogen atom).
7. The thin film forming method according to claim 6 , wherein the silicon compound is cyclopentasilane.
8. The thin film forming method according to claim 6 , further comprising supplying a source gas different from the source gas to the sample.
9. The thin film forming method according to claim 8 , wherein the material of the different source gas is any one of water, oxygen, and nitrogen.
10. The thin film forming method according to claim 6 , further comprising heating the thin film.
11. The thin film forming method according to claim 6 , further comprising injecting an oxygen or nitrogen ion beam to the thin film.
12. A thin film forming method comprising the steps of:
irradiating a sample with a focused ion beam to form a pair of concave portions spaced apart from each other in a portion of a surface of the sample and to form a thin sample between the concave portions;
detaching the thin sample from the sample; and
supplying a silicon compound represented by a general formula (I) below as a source gas to the concave portions, and irradiating the sample with the charged particle beam while condensing the charged particle beam to form a film,
Si n X m (I)
(where n is an integer of 3 or larger, m is an integer of n, 2n−2 , 2n, or 2n+2, and X represents a hydrogen atom and/or a halogen atom).
13. The thin film forming method according to claim 12 , wherein the charged particle beam is the focused ion beam.
14. A defect correction method comprising:
supplying a silicon compound represented by a general formula (I) below as a source gas to a nanoimprinting molding defect portion, and condensing a charged particle beam and irradiating the defect portion with the charged particle beam to form a film and correct the defect portion,
Si n X m (I)
(where n is an integer of 3 or larger, m is an integer of n, 2n−2, 2n, or 2n+2, and X represents a hydrogen atom and/or a halogen atom).
15. A device forming method that includes a step of forming a first thin film by supplying a source gas to a sample and condensing a first charged particle beam to irradiate the sample, the method comprising the steps of:
supplying a silicon compound represented by a general formula (I) below as the source gas to the sample, and irradiating the sample with the first charged particle beam while condensing the first charged particle beam to form the first thin film; and
supplying the source gas to the sample, and irradiating the sample with a second charged particle beam of beam species different from the first charged particle beam to form a second thin film of different functionality from the first thin film,
Si n X m (I)
(where n is an integer of 3 or larger, m is an integer of n, 2n−2, 2n, or 2n+2, and X represents a hydrogen atom and/or a halogen atom).