IP Library Granted Patent US 8,896,473
Granted Patent B2
US 8,896,473 · App. 13/897,955 · Granted Nov 25, 2014

Digital-to-analog-converter with resistor ladder

Inventor: Gregory Dix (Tempe, AZ)
Assignee: Microchip Technology Incorporated
H03M1/785H03M1/765H03M1/06H03M1/682
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Quick Facts
Patent No.
US 8,896,473
App. No.
13/897,955
Granted
Nov 25, 2014
Kind
B2
Abstract

A digital-to analog-converter (DAC) has a MSB resistor ladder with a plurality of series connected resistors, wherein the MSB resistor ladder is coupled between a first and second reference potential, a LSB resistor ladder with a plurality of series connected resistors, and a plurality of switching units for connecting one of the series connected resistors of the MSB resistor ladder with the LSB resistor ladder, wherein each switching unit has a first switch for connecting a first terminal of an associated MSB resistor with a first terminal of the LSB resistor ladder and a second switch for connecting a second terminal of the associated MSB resistor with a second terminal of the LSB resistor ladder and wherein each switch is configured form a resistor of similar value of the resistors of the LSB resistor ladder when switched on.

Claims (33)

1. A digital-to analog-converter (DAC) comprising:

an MSB resistor ladder comprising a plurality of series connected MSB resistors, wherein the MSB resistor ladder is coupled between a first and second reference potential;

a partial LSB resistor ladder comprising a plurality of series connected resistors; and

a plurality of switching units for connecting at least one of said series connected MSB resistors of the MSB resistor ladder with the partial LSB resistor ladder, wherein each switching unit comprises a first switch for connecting a first terminal of an associated MSB resistor with a first terminal of the partial LSB resistor ladder and a second switch for connecting a second terminal of the associated MSB resistor with a second terminal of the partial LSB resistor ladder and wherein a switch path of each switch is configured to form a resistor and wherein when said first and second switches are turned on, the first switch, the partial LSB resistor ladder and the second switch form an LSB resistor ladder connected in a parallel with the associated MSB resistor.

2. The digital-to analog-converter according to claim 1 , further comprising a decoder for controlling one of the switching units to connect an associated MSB resistor of the MSB resistor ladder with the partial LSB resistor ladder and for selecting one of a plurality of tapping nodes of the LSB resistor ladder for providing an output voltage of the DAC.

3. The digital-to analog-converter according to claim 2 , wherein each tapping node is coupled with an output of the LSB resistor ladder by an N-channel field effect transistor.

4. The digital-to analog-converter according to claim 1 , wherein each first and second switch of the plurality of switching units is formed by a p-channel depletion field effect transistor.

5. The digital-to analog-converter according to claim 4 , wherein the partial LSB resistor ladder is formed by a plurality of p-channel depletion transistors connected as diodes.

6. The digital-to analog-converter according to claim 5 , wherein the partial LSB resistor ladder is formed by a plurality of sub LSB resistor ladders coupled in series.

7. The digital-to analog-converter according to claim 6 , wherein each switching unit has a first and a second output connected with the first and second switch, respectively and further comprises a third switch for directly connecting the second terminal of an associated MSB resistor with a third output, wherein the first of the sub LSB resistor ladders is connected with the first output and the last of the sub LSB resistor ladders is connected with the second and third output.

8. The digital-to analog-converter according to claim 7 , wherein the third switch is an N-channel field effect transistor.

9. The digital-to analog-converter according to claim 8 , wherein each of the sub LSB resistor ladders comprises 2 q resistors except for the last sub LSB resistor ladder which comprises 2 q -2 resistors and wherein the last LSB resistor ladder comprises a direct connection between a third input connected with the third output of the switching unit and a LSB resistor ladder output, wherein q is a positive integer.

10. The digital-to analog-converter according to claim 9 , wherein q=3.

11. The digital-to analog-converter according to claim 1 , wherein the MSB resistor ladder comprises 2 p resistors and an effective LSB resistor ladder formed by a switching unit and the LSB resistor ladder comprises 2 m resistors.

12. The digital-to analog-converter according to claim 11 , wherein p=32 and m=128.

13. The digital-to analog-converter according to claim 1 , wherein the first reference potential is one half of a supply voltage and the second reference potential is ground.

14. The digital-to analog-converter according to claim 13 , wherein the first reference potential is provided by a reference resistor ladder coupled in series with the MSB resistor ladder.

15. The digital-to analog-converter according to claim 14 , further comprising compensation circuits for each resistor of the reference resistor ladder.

16. The digital-to analog-converter according to claim 1 , further comprising a compensation circuit for each resistor of the MSB resistor ladder.

17. The digital-to analog-converter according to claim 16 , wherein each compensation circuit is controlled depending on a MSB input value.

18. A method of generating an analog voltage from a digital value comprising the steps of:

providing an MSB resistor ladder comprising a plurality of series connected resistors between a first and second reference potential;

providing a partial LSB resistor ladder comprising a plurality of series connected resistors;

depending on an MSB value selectively connecting a first terminal of a selected MSB resistor with a first terminal of the partial LSB resistor ladder by a first switch and connecting second terminal of the selected MSB resistor with a second terminal of the partial LSB resistor ladder by a second switch, wherein a switch path of each switch is configured to form a resistor and wherein when said first and second switches are turned on, the first switch, the partial LSB resistor ladder and the second switch form an LSB resistor ladder connected in parallel with the selected MSB resistor; and

depending on an LSB value selecting a tapping node of the LSB resistor ladder to provide an analog output voltage.

19. The method according to claim 18 , wherein each tapping node is coupled with an output of the LSB resistor ladder by an N-channel field effect transistor.

20. The method according to claim 18 , wherein each first and second switch of the plurality of switching units is formed by a p-channel depletion field effect transistor.

21. The method according to claim 20 , wherein the partial LSB resistor ladder is formed by a plurality of p-channel depletion transistors connected as diodes.

22. The method according to claim 21 , wherein the partial LSB resistor ladder is formed by a plurality of sub LSB resistor ladders coupled by series.

23. The method according to claim 18 , wherein the first reference potential is one half of a supply voltage and the second reference potential is ground.

24. The method according to claim 23 , further comprising providing the first reference potential by a reference resistor ladder coupled in series with the MSB resistor ladder.

25. The method according to claim 24 , further comprising compensating each resistor of the reference resistor ladder.

26. The method to claim 18 , further comprising compensating each resistor value of the MSB resistor ladder depending on the MS value.

Assignments (15)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 059666/0545 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: MICROCHIP TECHNOLOGY INCORPORATED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2013
From: DIX, GREGORY
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 030973/0594 →
Continuity (2)
Provisional Application 61650653 · May 23, 2012
Related Publication 20130314263A1 · Nov 28, 2013