Data encoding for non-volatile memory

1. A method comprising:

in a memory device configured to write data to storage elements by performing at least one of a first operation on one or more first storage elements that are in a first state and a second operation on one or more second storage elements that are in a second state, wherein the first operation changes the first state to the second state, wherein the second operation changes the second state to the first state, and wherein the memory device includes a resistive random access memory (ReRAM), performing:

receiving the data to be stored to the storage elements;

applying a mapping to the received data to generate mapped data, wherein the mapping comprises a one-to-many mapping; and

writing the mapped data to the storage elements,

wherein the mapping is configured to reduce average write time by mapping at least one incoming data value into a mapped value such that the second operation is not required for storing the mapped value to the storage elements.

2. The method of claim 1 , wherein applying the mapping includes, in response to a first mapped value of the data value requiring a transition from the second state to the first state and a second mapped value of the data value requiring no transitions from the second state to the first state, selecting the second mapped value.

3. The method of claim 1 , wherein applying the mapping of the received data to the mapped data includes matching multiple mapped data values to a particular received data value and, in response to all of the multiple mapped data values that are matched to the particular received data value requiring a transition from the second state to the first state, selecting one of the multiple mapped data values with a largest number of bits matching the first state of the storage elements as compared to the others of the multiple mapped data values.

4. The method of claim 1 , wherein the mapping of the received data to the mapped data depends on the states of the storage elements prior to the writing of the mapped data.

5. A method comprising:

in a memory device configured to write data to storage elements by performing at least one of a first operation on one or more first storage elements that are in a first state and a second operation on one or more second storage elements that are in a second state, wherein the first operation changes the first state to the second state, wherein the second operation changes the second state to the first state, wherein a second time to perform the second operation exceeds a first time to perform the first operation, and wherein the memory device includes a resistive random access memory (ReRAM), performing:

receiving the data to be stored to the storage elements;

applying a mapping to the data to generate mapped data, wherein the mapping comprises a one-to-many mapping; and

writing the mapped data to the storage elements,

wherein the mapping is configured to reduce average write time by mapping at least one incoming data value into a mapped value such that no second state to first state transitions are used for storing the mapped value to the storage elements.

6. The method of claim 5 , wherein applying the mapping includes, in response to a first mapped value of the data value requiring a transition from the second state to the first state and a second mapped value of the data value requiring no transitions from the second state to the first state, selecting the second mapped value.

7. The method of claim 5 , wherein applying the mapping of the received data to the mapped data includes matching multiple mapped data values to a particular received data value and, in response to all of the multiple mapped data values that are matched to the particular received data value involving a transition from the second state to the first state, selecting one of the multiple mapped data values with a largest number of bits matching the first state of the storage elements as compared to the others of the multiple mapped data values.

8. The method of claim 5 , wherein the mapping of the received data to the mapped data depends on the states of the storage elements prior to the writing of the mapped data.

9. A method comprising:

in a memory device configured to write data to storage elements by performing at least one of a first operation on one or more first storage elements that are in a first state and a second operation on one or more second storage elements that are in a second state, wherein the first operation changes the first state to the second state and wherein the second operation changes the second state to the first state, performing:

receiving the data to be stored to the memory device; and

if the data is to be stored to a first partition of the memory device and not to be stored to a second partition of the memory device:

applying a mapping to the received data to generate mapped data, wherein the mapping comprises a one-to-many mapping, and wherein the first partition of the memory device includes a resistive random access memory (ReRAM); and

writing the mapped data to the first partition,

wherein the mapping is configured to reduce average write time to the first partition as compared to the second partition by mapping at least one incoming data value into a mapped value such that no second state to first state transitions are required for storing the mapped value to the first partition.

10. The method of claim 9 , wherein applying the mapping includes, in response to a first mapped value of the received data requiring a second state to first state transition and a second mapped value of the received data requiring no second state to first state transitions, selecting the second mapped value.

11. The method of claim 9 , wherein applying the mapping of the received data to mapped data includes matching multiple mapped data values to a particular received data value and, in response to all of the multiple mapped data values that are matched to the particular received data value requiring a second state to first state transition, selecting one of the multiple mapped data values with a largest number of bits matching the first state as compared to the others of the multiple mapped data values.

12. The method of claim 9 , wherein the mapping of the received data to the mapped data depends on the states of the storage elements prior to the writing of the mapped data.

13. A data storage device comprising:

a controller;

a memory device coupled to the controller and including storage elements, the memory device configured to write data to the storage elements by performing at least one of a first operation on one or more first storage elements that are in a first state and a second operation on one or more second storage elements that are in a second state, wherein the first operation changes the first state to the second state, wherein the second operation changes the second state to the first state, and wherein the memory device includes a resistive random access memory (ReRAM); and

mapping circuitry configured, in response to receiving the data to be stored to the storage elements, to apply a mapping to the received data to generate mapped data to be stored to the storage elements, wherein the mapping comprises a one-to-many mapping,

wherein the mapping is configured to reduce average write time by mapping at least one incoming data value into a mapped value such that the second operation is not required for storing the mapped value to the storage elements.

14. The data storage device of claim 13 , wherein applying the mapping includes, in response to a first mapped value of the data value requiring a transition from the second state to the first state and a second mapped value of the data value requiring no transitions from the second state to the first state, selecting the second mapped value.

15. The data storage device of claim 13 , wherein applying the mapping of the received data to the mapped data includes matching multiple mapped data values to a particular data value and, in response to all of the multiple mapped data values that are matched to the particular data value requiring a transition from the second state to the first state, the controller is configured to select one of the multiple mapped data values with a largest number of bits matching the first state of the storage elements as compared to the others of the multiple mapped data values.

16. The data storage device of claim 13 , wherein the mapping of the received data to the mapped data depends on the states of the storage elements prior to the writing of the mapped data.

17. The data storage device of claim 13 , wherein the controller includes the mapping circuitry.

18. The data storage device of claim 13 , wherein the mapping circuitry is included on a memory die that includes the storage elements.

19. The data storage device of claim 13 , wherein the controller includes a first portion of the mapping circuitry and wherein a second portion of the mapping circuitry is included on a memory die that includes the storage elements.

20. A data storage device comprising:

a controller;

a memory device coupled to the controller and including storage elements, the memory device configured to write data to the storage elements by performing at least one of a first operation on one or more first storage elements that are in a first state and a second operation on one or more second storage elements that are in a second state, wherein the first operation changes the first state to the second state, wherein the second operation changes the second state to the first state, and wherein a second time to perform the second operation exceeds a first time to perform the first operation, and wherein the memory device includes a resistive random access memory (ReRAM); and

mapping circuitry configured, in response to receiving the data to be stored to the storage elements, to apply a mapping to the data to generate mapped data to be stored to the storage elements, wherein the mapping comprises a one-to-many mapping, wherein the mapping is configured to reduce average write time by mapping at least one incoming data value into a mapped value such that no second state to first state transitions are used for storing the mapped value to the storage elements.

21. The data storage device of claim 20 , wherein the controller includes a first portion of the mapping circuitry, and wherein a second portion of the mapping circuitry is included on a memory die that includes the storage elements.

22. The data storage device of claim 20 , wherein the mapping circuitry is configured, in response to a first mapped value of the data value requiring a transition from the second state to the first state and a second mapped value of the data value requiring no transitions from the second state to the first state, to select the second mapped value.

23. The data storage device of claim 20 , wherein applying the mapping of the received data to the mapped data includes matching multiple mapped data values to a particular received data value and, in response to all of the multiple mapped data values that are matched to the particular received data value involving a transition from the second state to the first state, the controller is configured to select one of the multiple mapped data values with a largest number of bits matching the first state as compared to the others of the multiple mapped data values.

24. The data storage device of claim 20 , wherein the mapping of the received data to the mapped data depends on the states of the storage elements prior to the writing of the mapped data.

25. The data storage device of claim 20 , wherein each of the storage elements is configured to store a single bit.

26. The data storage device of claim 20 , wherein each of the storage elements is configured to store multiple bits.

27. A data storage device comprising:

a controller;

a memory device coupled to the controller, wherein the memory device includes a first partition and a second partition and wherein the memory device is configured to write data to storage elements by performing at least one of a first operation on one or more first storage elements that are in a first state and a second operation on one or more second storage elements that are in a second state, wherein the first operation changes the first state to the second state and wherein the second operation changes the second state to the first state, wherein the first partition of the memory device includes a resistive random access memory (ReRAM); and

mapping circuitry configured to receive the data to be stored into the memory device and, if the data is to be stored to the first partition of the memory device and not to be stored to the second partition of the memory device, to apply a mapping to the received data to generate mapped data to be written to the first partition, wherein the mapping comprises a one-to-many mapping,

wherein the mapping is configured to reduce average write time to the first partition as compared to the second partition by mapping at least one incoming data value into a mapped value such that no second state to first state transitions are used for storing the mapped value to the first partition.

28. The data storage device of claim 27 , wherein the mapping circuitry is included on a memory die that includes the storage elements.

29. The data storage device of claim 27 , wherein in response to a first mapped value of the received data requiring a second state to first state transition and a second mapped value of the received data requiring no second state to first state transitions, the mapping circuitry is configured to select the second mapped value.

30. The data storage device of claim 27 , wherein applying the mapping of the received data to mapped data includes matching multiple mapped data values that map to a particular received data value and wherein the controller is configured to select one of the multiple mapped data values with a largest number of bits matching the first state as compared to the others of the multiple mapped data values in response to all of the multiple mapped data values that are matched to the particular received data value requiring a second state to first state transition.

31. The data storage device of claim 27 , wherein the mapping of the received data to the mapped data depends on the states of the storage elements prior to the writing of the mapped data.

32. The data storage device of claim 27 , wherein each of the storage elements is configured to store a single bit.

33. The data storage device of claim 27 , wherein each of the storage elements is configured to store multiple bits.