Method of forming an integrated crackstop
A method including forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate, forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure, and forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer. The method may further include forming a second dielectric layer above the metallic liner, and forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer.
1. A method comprising:
forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate;
forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure;
forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer;
forming a second dielectric layer above the metallic liner;
forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer: and,
patterning the third dielectric layer to create a third opening and a fourth opening, the third opening is aligned with and above the conductive pad and the fourth opening is located between the conductive pad and the metallic structure, the third dielectric layer remains above the metallic structure.
2. The method of claim 1 , further comprising:
removing a portion of the second dielectric layer exposed in the third opening and the fourth opening to expose the metallic liner;
forming a conductive plug on a first portion of the metallic liner above the conductive pad and within the first opening in the third dielectric layer; and,
removing a second portion of the metallic liner in the fourth opening to expose the first dielectric layer,
the conductive pad providing an electrical connection to one or more semiconductor devices within the substrate, and the metallic structure comprising a crackstop feature at or adjacent to a kerf of the substrate.
3. The method of claim 1 , the third dielectric layer comprising a polyimide dielectric material, a photo sensitive polyimide dielectric material, or an organic dielectric material.
4. The method of claim 1 , the first dielectric layer comprising an oxide and the second dielectric layer comprises a nitride.
5. The method of claim 1 , the metallic liner comprising tantalum, tantalum-nitride, titanium, tungsten chromium, copper, or any combination thereof.
6. The method of claim 1 , the metallic liner comprising a tantalum barrier layer, a tantalum-nitride barrier layer, and a copper seed layer.
7. The method of claim 1 , the metallic liner comprising a titanium-tungsten barrier layer and a copper seed layer.
8. A method comprising:
forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate;
forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure;
forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer;
forming a second dielectric layer above the metallic liner;
forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer;
patterning the third dielectric layer to create a third opening and a fourth opening, the third opening is aligned with and above the conductive pad and the fourth opening is located between the conductive pad and the metallic structure, the third dielectric layer remains above the metallic structure;
removing a portion of the second dielectric layer exposed in the third opening and the fourth opening to expose the metallic liner;
forming a copper plug and a copper pedestal on a first portion of the metallic liner above the conductive pad, the copper plug is formed within the first opening in the third dielectric layer and the copper pedestal is formed on top of the copper plug; and
removing a second portion of the metallic liner in the fourth opening to expose the first dielectric layer.
9. The method of claim 8 , the conductive pad providing an electrical connection to one or more semiconductor devices within the substrate, and the metallic structure comprising a crackstop feature at or adjacent to a kerf of the substrate.
10. The method of claim 8 , the third dielectric layer comprising a polyimide dielectric material, a photo sensitive polyimide dielectric material, or an organic dielectric material.
11. The method of claim 8 , the first dielectric layer comprising an oxide and the second dielectric layer comprises a nitride.
12. The method of claim 8 , the metallic liner comprising tantalum, tantalum-nitride, titanium, tungsten chromium, copper, or any combination thereof.
13. The method of claim 8 , the metallic liner comprising a tantalum barrier layer, a tantalum-nitride barrier layer, and a copper seed layer.
14. The method of claim 8 , the metallic liner comprising a titanium-tungsten barrier layer and a copper seed layer.
15. The method of claim 8 , further comprising:
forming a solder structure on the copper pedestal.
16. A method comprising:
forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate;
forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure;
forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer;
forming a second dielectric layer above the metallic liner;
forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer;
patterning the third dielectric layer to create a third opening and a fourth opening, the third opening is aligned with and above the conductive pad and the fourth opening is located between the conductive pad and the metallic structure, the third dielectric layer remains above the metallic structure;
removing a portion of the second dielectric layer exposed in the third opening and the fourth opening to expose the metallic liner;
forming a conductive plug on a first portion of the metallic liner above the conductive pad and within the first opening in the third dielectric layer; and
removing a second portion of the metallic liner in the fourth opening to expose the first dielectric layer.
17. The method of claim 16 , the conductive plug comprising a copper plug, the conductive pad providing an electrical connection to one or more semiconductor devices within the substrate, and the metallic structure comprising a crackstop feature at or adjacent to a kerf of the substrate.
18. The method of claim 16 , the first dielectric layer comprising an oxide, the second dielectric layer comprising a nitride and the third dielectric layer comprising a polyimide dielectric material, a photo sensitive polyimide dielectric material, or an organic dielectric material.
19. The method of claim 16 , the metallic liner comprising at a barrier layer and a copper seed layer.