Semiconductor device and method of wafer thinning involving edge trimming and CMP
A semiconductor device has a substrate including a plurality of conductive vias formed vertically and partially through the substrate. An encapsulant is deposited over a first surface of the substrate and around a peripheral region of the substrate. A portion of the encapsulant around the peripheral region is removed by a cutting or laser operation to form a notch extending laterally through the encapsulant to a second surface of the substrate opposite the first surface of the substrate. A first portion of the substrate outside the notch is removed by chemical mechanical polishing to expose the conductive vias. A second portion of the substrate is removed by backgrinding prior to or after forming the notch. The encapsulant is coplanar with the substrate after revealing the conductive vias. The absence of an encapsulant/base material interface and coplanarity of the molded substrate results in less over-etching or under-etching and fewer defects.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer containing a plurality of semiconductor dies formed in a base material extending across the semiconductor wafer and a plurality of conductive vias formed partially through an active surface of the base material with a distal end of the conductive vias embedded in the base material;
depositing an encapsulant over the active surface of the base material and around a peripheral region of the semiconductor wafer;
removing a first portion of the encapsulant and a first portion of the base material from a second surface of the base material opposite the active surface of the base material around the peripheral region to form a notch extending laterally through the encapsulant to remove all of the encapsulant around the perimeter of the semiconductor wafer within a height of the notch and further extending laterally into the base material, wherein the notch terminates prior to the conductive vias to leave the distal end of the conductive vias embedded in the base material; and
removing a second portion of the base material after forming the notch to remove the notch and expose the distal end of the conductive vias.
2. The method of claim 1 , further including removing a third portion of the base material prior to forming the notch.
3. The method of claim 1 , further including removing a third portion of the base material after forming the notch without exposing the distal end of the conductive vias.
4. The method of claim 1 , further including removing the second portion of the base material by a backgrinding operation.
5. The method of claim 1 , further including forming the notch by a laser.
6. The method of claim 1 , further including removing a second portion of the encapsulant.
7. A method of making a semiconductor device, comprising:
providing a semiconductor wafer containing a plurality of semiconductor dies formed in a base material of the semiconductor wafer;
depositing an encapsulant over an active surface of the base material and around a peripheral region of the semiconductor wafer;
forming a notch by a laser, wherein the notch extends laterally through a first portion of the encapsulant by removing all of the encapsulant around the perimeter of the semiconductor wafer within a height of the notch and further extends into the base material at a second surface of the base material opposite the active surface of the base material; and
removing a first portion of the base material to remove the notch and leave the base material coplanar with the encapsulant.
8. The method of claim 7 , further including removing a second portion of the base material prior to removing the first portion of the encapsulant around the peripheral region.
9. The method of claim 7 , further including removing a second portion of the base material after removing the first portion of the encapsulant around the peripheral region.
10. The method of claim 7 , further including removing the first portion of the base material by a backgrinding operation.
11. The method of claim 7 , further including removing a second portion of the encapsulant.
12. The method of claim 7 , further including providing a plurality of conductive vias extending vertically and partially through the base material.
13. The method of claim 12 , wherein removing the first portion of the base material exposes the conductive vias.
14. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including a plurality of semiconductor dies formed in a base material of the semiconductor wafer;
depositing an encapsulant around a peripheral region of the semiconductor wafer; and
forming a notch by a laser, wherein the notch extends laterally through the encapsulant and into the base material at a second surface of the base material opposite an active surface of the base material around the peripheral region.
15. The method of claim 14 , further including removing a portion of the base material prior to forming the notch.
16. The method of claim 14 , further including removing a portion of the base material to remove the notch and leave the base material coplanar with the encapsulant.
17. The method of claim 14 , further including removing a portion of the base material by a backgrinding operation.
18. The method of claim 14 , further including removing a portion of the encapsulant.
19. The method of claim 14 , further including providing a plurality of conductive vias extending vertically and partially through the base material.
20. The method of claim 19 , wherein the notch terminates prior to the conductive vias to leave a distal end of the conductive vias embedded in the base material.
21. A semiconductor device, comprising:
a semiconductor wafer including a plurality of semiconductor dies formed in a base material of the semiconductor wafer and a conductive via extending from an active surface of the base material partially through the base material; and
an encapsulant deposited around a peripheral region of the semiconductor wafer with a notch extending laterally through the encapsulant around the peripheral region and into a second surface of the base material opposite the active surface of the base material, wherein the notch terminates prior to the conductive via to leave a distal end of the conductive via embedded in the base material.
22. The semiconductor device of claim 21 , wherein the encapsulant is deposited over the active surface of the base material.
23. A method of making a semiconductor device, comprising:
providing a semiconductor wafer containing a plurality of semiconductor dies formed in a base material of the semiconductor wafer;
providing a plurality of conductive vias extending vertically and partially through the base material;
depositing an encapsulant over an active surface of the base material and around a peripheral region of the semiconductor wafer;
forming a notch extending laterally through a first portion of the encapsulant by removing all of the encapsulant around the perimeter of the semiconductor wafer within a height of the notch, wherein the notch extends into the base material at a second surface of the base material opposite the active surface of the base material and terminates prior to the conductive vias to leave a distal end of the conductive vias embedded in the base material; and
removing a first portion of the base material to remove the notch and leave the base material coplanar with the encapsulant.