Semiconductor device and method of forming shielding layer over active surface of semiconductor die

1. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a plurality of semiconductor die with a plurality of contact pads formed over an active surface of the semiconductor die;

forming a first opening into the active surface of the semiconductor die with the first opening extending partially through the semiconductor wafer;

forming a second opening into a saw street in an inactive area of the semiconductor wafer between the semiconductor die with the second opening extending partially through the semiconductor wafer;

forming a conductive layer over the active surface of the semiconductor die and into the first opening and second opening to operate as a shielding layer extending over the active surface, into the first opening, and around side surfaces of the semiconductor die; and

removing a portion of the semiconductor wafer opposite the active surface of the semiconductor die, wherein after removing the portion of the semiconductor wafer the first opening extends from the active surface of the semiconductor die through the semiconductor die to reach a second surface of the semiconductor die opposite the active surface of the semiconductor die.

2. The method of claim 1 , further including forming an insulating layer over the active surface of the semiconductor die.

3. The method of claim 1 , further including forming an insulating layer in the first opening and second opening prior to forming the conductive layer.

4. The method of claim 1 , further including forming an interconnect structure between the conductive layer and a ground point.

5. A method of making a semiconductor device, comprising:

providing a plurality of semiconductor die including a semiconductor material;

forming a first opening through an active surface of the semiconductor die with the first opening extending into the semiconductor material of the semiconductor die;

forming a second opening in a saw street between the semiconductor die; and

forming a shielding layer over the active surface of the semiconductor die and into the first opening and second opening with the shielding layer covering a side surface of the semiconductor die, wherein the shielding layer is electrically isolated from the active surface of the semiconductor die.

6. The method of claim 5 , further including forming an insulating layer over the active surface of the semiconductor die.

7. The method of claim 5 , further including forming an insulating layer in the second opening between the semiconductor die.

8. The method of claim 5 , further including forming an interconnect structure between the shielding layer and a ground point.

9. The method of claim 5 , further including removing a portion of the semiconductor die opposite the active surface of the semiconductor die.

10. The method of claim 9 , wherein after removing the portion of the semiconductor die the first opening extends from the active surface of the semiconductor die completely through the semiconductor die to a second surface of the semiconductor die opposite the active surface.

11. A semiconductor device, comprising:

a semiconductor die including an opening formed in an active surface of the semiconductor die and extending from the active surface of the semiconductor die through the semiconductor die to reach a second surface of the semiconductor die opposite the active surface; and

a conductive layer formed over the active surface of the semiconductor die and extending over a side surface of the semiconductor die and into the opening to operate as a shielding layer over the semiconductor die.

12. The semiconductor device of claim 11 , further including an insulating layer formed over the semiconductor die.

13. The semiconductor device of claim 11 , further including an insulating layer formed in the opening in the semiconductor die.

14. The semiconductor device of claim 11 , further including an interconnect structure formed over the conductive layer.

15. The semiconductor device of claim 11 , wherein the conductive layer is conformally applied over a sidewall of the opening.

16. A semiconductor device, comprising:

a semiconductor die including an opening in an active surface of the semiconductor die; and

a shielding layer formed over the active surface of the semiconductor die and a side surface of the semiconductor die with the shielding layer extending into the opening in the active surface of the semiconductor die, wherein the opening extends from the active surface of the semiconductor die completely through the semiconductor die to a second surface of the semiconductor die opposite the active surface.

17. The semiconductor device of claim 16 , further including an insulating layer formed over the semiconductor die.

18. The semiconductor device of claim 16 , further including an interconnect structure formed over the shielding layer.

19. A semiconductor device, comprising:

a semiconductor die including an opening in an active surface of the semiconductor die; and

a shielding layer formed over the active surface of the semiconductor die and a side surface of the semiconductor die with the shielding layer extending into the opening in the active surface of the semiconductor die, wherein the shielding layer is electrically isolated from the active surface of the semiconductor die.

20. The semiconductor device of claim 19 , wherein the shielding layer is conformally applied over the active surface of the semiconductor, side surface of the semiconductor die, and into the opening.