Solder joint flip chip interconnection
View Patent ↗A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.
1. A method of making a semiconductor device, comprising:
providing a first substrate including a first interconnect site;
providing a second substrate including a second interconnect site comprising a width less than a width of the first interconnect site;
forming an interconnect structure between the first interconnect site and second interconnect site with the interconnect structure including a tapered profile; and
disposing a non-wettable material outside the second interconnect site.
2. The method of claim 1 , wherein the interconnect structure includes a bump.
3. The method of claim 1 , wherein the interconnect structure includes a non-fusible portion and a fusible portion.
4. The method of claim 3 , wherein the non-fusible portion includes lead solder, copper, gold, or nickel.
5. The method of claim 3 , wherein the fusible portion includes eutectic solder, tin, silver, copper, or lead.
6. The method of claim 1 , further including depositing an underfill material between the first substrate and second substrate.
7. The method of claim 1 , wherein the first substrate includes a semiconductor die.
8. The method of claim 1 , wherein the first interconnect site includes a die pad or an under bump metallization.
9. The method of claim 1 , wherein the interconnect structure includes an elongated bump.
10. A semiconductor device, comprising:
a first substrate;
a second substrate; and
an interconnect structure formed between the first substrate and an interconnect site on the second substrate with the interconnect structure elongated along a length of the interconnect site, wherein the interconnect structure includes a non-fusible portion and a fusible portion.
11. The semiconductor device of claim 10 , wherein the interconnect structure includes a tapered profile.
12. The semiconductor device of claim 10 , wherein the non-fusible portion includes lead solder, copper, gold, or nickel, and the fusible portion includes eutectic solder, tin, silver, copper, or lead.
13. The semiconductor device of claim 10 , further including an underfill material deposited between the first substrate and second substrate.
14. The semiconductor device of claim 10 , further including:
a trace including the interconnect site formed over the second substrate; and
a non-wettable material disposed over the trace outside the interconnect site.
15. The semiconductor device of claim 10 , wherein the interconnect structure includes a bump.
16. A method of making a semiconductor device, comprising:
providing a first substrate;
providing a second substrate including a trace;
forming an interconnect structure between the first substrate and an interconnect site on the trace of the second substrate with the interconnect structure including a first width at the first substrate and a second width less than the first width at the interconnect site; and
disposing a non-wettable material over the trace outside the interconnect site.
17. The method of claim 16 , wherein the interconnect structure includes a bump.
18. The method of claim 16 , wherein the interconnect structure includes a non-fusible portion and a fusible portion.
19. The method of claim 18 , wherein the non-fusible portion includes lead solder, copper, gold, or nickel.
20. The method of claim 18 , wherein the fusible portion includes eutectic solder, tin, silver, copper, or lead.
21. The method of claim 16 , further including depositing an underfill material between the first substrate and second substrate.
22. The method of claim 16 , wherein the first substrate includes a semiconductor die.
23. The method of claim 16 , further including forming a solder mask over the second substrate.
24. The method of claim 23 , further including forming an opening in the solder mask, the opening disposed over the interconnect site on the trace.