Semiconductor Device and Method of Forming Bump Interconnect Structure with Conductive Layer Over Buffer Layer
A semiconductor device has a substrate with a plurality of contact pads. A first insulation layer is formed over the substrate and contact pads. A portion of the first insulating layer is removed to form a toroid-shaped SRO over the contact pads while retaining a central portion of the first insulating layer over the contact pads. The central portion of the first insulating layer can extend above a surface of the first insulating layer outside the first conductive layer. A first conductive layer is formed over the central portion of the first insulating layer and through the SRO in the first insulating layer over the contact pads. The first conductive layer may extend above a surface of the first insulating layer outside the second conductive layer. A semiconductor die is mounted to the substrate with the bumps electrically connected to the first conductive layer.
1 . A method of making a semiconductor device, comprising:
providing a substrate including a contact pad formed on a surface of the substrate;
forming a first insulating layer in direct contact with the surface of the substrate and contact pad;
removing a first portion of the first insulating layer to form an opening within a boundary of the contact pad and extending to the contact pad while leaving a central portion of the first insulating layer extending from the contact pad, and removing a second portion of the first insulating layer to leave a surface of the first insulating layer extending outwardly from the opening below a height of the central portion of the first insulating layer;
forming a protective mask in direct contact with the surface of the first insulating layer with an opening in the protective mask extending outside the opening in the first insulating layer;
conformally applying a first conductive layer within the opening in the protective mask and in direct contact with the surface and central portion of the first insulating layer and through the opening in the first insulating layer in direct contact with the contact pad;
providing a semiconductor die including a bump formed over the semiconductor die; and
bonding the bump to the first conductive layer with the central portion of the first insulating layer extending into the bump.
2 . The method of claim 1 , wherein the opening in the first insulating layer includes a circular or toroidal shape.
3 . The method of claim 1 , wherein the first insulating layer includes solder resist material.
4 . The method of claim 1 , further including forming the opening in the first insulating layer using laser direct ablation.
5 . The method of claim 1 , further including removing the protective mask.
6 . The method of claim 1 , further including:
forming a second conductive layer over a surface of the semiconductor die;
forming a second insulating layer over the surface of the semiconductor die;
forming a third conductive layer over the second conductive layer and second insulating layer; and
forming the bump over the third conductive layer.
7 . A method of making a semiconductor device, comprising:
providing a substrate including a contact pad formed on a surface of the substrate;
forming a first insulating layer in direct contact with the surface of the substrate and contact pad;
removing a portion of the first insulating layer to form an opening extending to the contact pad while leaving a central portion of the first insulating layer extending from the contact pad;
forming a protective mask in direct contact with the surface of the first insulating layer with an opening in the protective mask extending outside the opening in the first insulating layer;
depositing a conductive material to completely fill the opening in the protective mask from the contact pad to a surface of the protective mask; and
disposing a semiconductor die over the substrate and electrically connected to the conductive material.
8 . The method of claim 7 , wherein the opening in the first insulating layer includes a circular or toroidal shape.
9 . The method of claim 7 , wherein the first insulating layer includes solder resist material.
10 . The method of claim 7 , further including forming the opening in the first insulating layer using laser direct ablation.
11 . The method of claim 7 , further including removing the protective mask.
12 . The method of claim 7 , further including forming a conductive layer over the conductive material.
13 . The method of claim 7 , further including:
forming a first conductive layer over a surface of the semiconductor die;
forming a second insulating layer over the surface of the semiconductor die;
forming a second conductive layer over the first conductive layer and second insulating layer; and
forming the bump over the second conductive layer.
14 . A method of making a semiconductor device, comprising:
providing a substrate including a contact pad formed on a surface of the substrate;
forming a first insulating layer in direct contact with the surface of the substrate and contact pad;
removing a first portion of the first insulating layer to form an opening extending to the contact pad while leaving a central portion of the first insulating layer extending from the contact pad;
forming a protective mask in direct contact with the surface of the first insulating layer with an opening in the protective mask extending outside the opening in the first insulating layer; and
forming a first conductive layer within the opening in the protective mask and in direct contact with a surface of the first insulating layer and central portion of the first insulating layer and through the opening in the first insulating layer in direct contact with the contact pad.
15 . The method of claim 14 , further including disposing a semiconductor die over the substrate and electrically connected to the first conductive layer.
16 . The method of claim 14 , further including removing a second portion of the first insulating layer to leave a surface of the first insulating layer extending outwardly from the opening below a height of the central portion of the first insulating layer.
17 . The method of claim 16 , further including:
providing a semiconductor die including a bump formed over the semiconductor die; and
bonding the bump to the first conductive layer with the central portion of the first insulating layer extending into the bump.
18 . The method of claim 14 , further including forming the opening in the first insulating layer using laser direct ablation.
19 . The method of claim 14 , further including removing the protective mask.
20 . The method of claim 14 , wherein the opening in the first insulating layer includes a circular or toroidal shape.
21 . A semiconductor device, comprising:
a substrate including a contact pad formed on a surface of the substrate;
a first insulating layer formed in direct contact with the surface of the substrate and contact pad with an opening formed in the first insulating layer extending to the contact pad to leave a central portion of the first insulating layer extending from the contact pad;
a protective mask formed in direct contact with the surface of the first insulating layer with an opening in the protective mask extending outside the opening in the first insulating layer; and
a first conductive layer formed within the opening in the protective mask and in direct contact with a surface of the first insulating layer and central portion of the first insulating layer and through the opening in the first insulating layer in direct contact with the contact pad.
22 . The semiconductor device of claim 20 , wherein the opening in the first insulating layer includes a circular or toroidal shape.
23 . The semiconductor device of claim 20 , wherein the first insulating layer includes solder resist material.
24 . The semiconductor device of claim 20 , further including a semiconductor die disposed over the substrate and electrically connected to the first conductive layer.
25 . The semiconductor device of claim 24 , further including:
a second conductive layer formed over a surface of the semiconductor die;
a second insulating layer formed over the surface of the semiconductor die; and
a third conductive layer formed over the second conductive layer and second insulating layer, wherein the bump is formed over the third conductive layer.