Semiconductor device and method of manufacturing the same
Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substract, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
1. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substate;
a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up substrate of the wiring substrate such that the obverse surface thereof faces to the first build-up substrate and being electrically connected to the wiring substrate via a plurality of first bump electrodes;
a sealing resin being disposed between the first build-up substrate of the wiring substrate and the obverse surface of the semiconductor chip such that the sealing resin seals the plurality of first bump electrodes; and
a plurality of second bump electrodes being disposed over the second build-up substrate of the wiring substrate,
wherein the core substrate has a first insulating layer, a plurality of first through holes which penetrate through the first insulating layer in a thickness direction of the first insulating layer, and a plurality of first wiring layers formed over a top surface and bottom surface of the first insulating layer are electrically connected each other via the plurality of first through holes, respectively,
wherein the first build-up substrate has a second insulating layer, a plurality of second through holes which penetrate through the second insulating layer in a thickness direction of the second insulating layer, and a plurality of second wiring layers formed over a surface of the second insulating layer and in a plurality of second through holes respectively,
wherein the second build-up substrate has a third insulating layer, a plurality of third through holes which penetrate through the third insulating layer in a thickness direction of the third insulating layer, and a plurality of third wiring layers formed over a surface of the third insulating layer and in a plurality of third through holes, respectively,
wherein the first insulating layer of the core substrate, the second insulating layer of the first build-up substrate, and the third insulating layer of the second build-up substrate have a resin layer and a glass cloth, respectively,
wherein the glass cloth is woven a glass fiber in a shape of a cloth, and
wherein a thickness of the glass cloth contained in each of the first and second build-up substrates is thinner than a thickness of the glass cloth contained in the core substrate.
2. The semiconductor device according to claim 1 ,
wherein a diameter of each of the plurality of second and third through holes is different from a diameter of each of the plurality of first through holes.
3. The semiconductor device according to claim 2 ,
wherein the diameter of each of the plurality of second and third through holes is smaller than the diameter of each of the plurality of first through holes.
4. The semiconductor device according to claim 3 ,
wherein the diameter of each of the plurality of second and third through holes is 100 micrometers or less.
5. The semiconductor device according to claim 1 ,
wherein a thickness of each of the first and second build-up substrates is thinner than a thickness of the core substrate.
6. The semiconductor device according to claim 1 , further comprising:
a solder resist layer being formed such that the solder resist covers parts of the plurality of second wiring layers of the first build-up substrate,
wherein the plurality of first bump electrodes electrically connect to the plurality of second wiring layers exposed from the solder resist, respectively.
7. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substrate;
a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up substrate of the wiring substrate such that the obverse surface thereof faces to the first build-up substrate and being electrically connected to the wiring substrate via a plurality of first bump electrodes;
a sealing resin being disposed between the first build-up substrate of the wiring substrate and the obverse surface of the semiconductor chip such that the sealing resin seals the plurality of first bump electrodes; and
a plurality of second bump electrodes being disposed over the second build-up substrate of the wiring substrate,
wherein the core substrate has a first insulating layer, a plurality of first through holes which penetrate through the first insulating layer in a thickness direction of the first insulating layer, and a plurality of first wiring layers formed over a top surface and bottom surface of the first insulating layer are electrically connected each other via the plurality of first through holes, respectively,
wherein the first build-up substrate has a second insulating layer, a plurality of second through holes which penetrate through the second insulating layer in a thickness direction of the second insulating layer, and a plurality of second wiring layers formed over a surface of the second insulating layer and in a plurality of second through holes, respectively, wherein the second build-up substrate has a third insulating layer, a plurality of third through holes which penetrate through the third insulating layer in a thickness direction of the third insulating layer, and a plurality of third wiring layers formed over a surface of the third insulating layer and in a plurality of third through holes, respectively,
wherein the first insulating layer of the core substrate, the second insulating layer of the first build-up substrate, and the third insulating layer of the second build-up substrate have a resin layer and a glass cloth, respectively,
wherein the glass cloth is nonwoven fabric type glass cloth formed by the glass fiber, and
wherein a thickness of the glass cloth contained in each of the first and second build-up substrates is thinner than a thickness of the glass cloth contained in the core substrate.