Semiconductor device including embedded controller die and method of making same
View Patent ↗A semiconductor device includes a substrate ( 102 ) with a cavity ( 112 ) formed therein for receiving a semiconductor die. In examples, the semiconductor die is a controller die ( 114 ). The controller die ( 114 ) may be electrically connected to the substrate ( 102 ) with electrical traces ( 120 ) which may be formed for example by printing. After the controller die ( 114 ) is electrically connected to the substrate ( 102 ), one or more memory die ( 150 ) may be affixed to the substrate ( 102 ), over the cavity ( 112 ) and controller die ( 114 ).
1. A semiconductor device, comprising:
a substrate including a dielectric layer and a conductive layer on the dielectric layer, the conductive layer including a conductance pattern including electrical traces and contact pads;
a solder mask layer formed on the substrate over the conductive layer;
a cavity formed in the substrate, down through the solder mask layer to a surface of the substrate on which the solder mask layer is formed;
a first semiconductor die mounted in the cavity, electrically isolated on the dielectric layer, the first semiconductor die including die bond pads;
the electrical traces formed between the contact pads of the substrate and the die bond pads of the first semiconductor die to electrically connect the first semiconductor die to the substrate; and
a second semiconductor die mounted on the substrate, covering at least a portion of the cavity including the first semiconductor die.
2. The semiconductor device of claim 1 , further comprising a dielectric material filling a space in the cavity around edges of the first semiconductor die.
3. The semiconductor device of claim 1 , wherein the first semiconductor die is a controller die.
4. The semiconductor device of claim 1 , wherein the second semiconductor die is a memory die.
5. The semiconductor device of claim 1 , wherein a depth of the cavity is substantially equal to a thickness of the first semiconductor die.
6. The semiconductor device of claim 1 , wherein a depth of the cavity is greater than a thickness of the first semiconductor die.
7. A semiconductor device, comprising:
a substrate including contact pads;
a solder mask layer formed on a surface of the substrate;
a cavity defined by an opening in the solder mask;
a first semiconductor die mounted in the cavity, the first semiconductor die including die bond pads;
printed electrical traces formed between the contact pads of the substrate and the die bond pads of the first semiconductor die to electrically connect the first semiconductor die to the substrate; and
a second semiconductor die mounted on the substrate, covering at least a portion of the cavity including the first semiconductor die.
8. The semiconductor device of claim 7 , further comprising a dielectric material filling a space in the cavity around edges of the first semiconductor die.
9. The semiconductor device of claim 7 , wherein the opening in the solder mask is substantially the same shape as a footprint of the first semiconductor die.
10. The semiconductor device of claim 7 , wherein a depth of the cavity is substantially equal to a thickness of the first semiconductor die.
11. The semiconductor device of claim 7 , wherein a depth of the cavity is greater than a thickness of the first semiconductor die.
12. A semiconductor device, comprising:
a substrate including contact pads;
a cavity formed in the substrate;
a first semiconductor die mounted in the cavity, the first semiconductor die including die bond pads;
electrical traces and an adhesive, the electrical traces and adhesive applied to the semiconductor device from a flexible film, the electrical traces applied between the contact pads of the substrate and the die bond pads of the first semiconductor die to electrically connect the first semiconductor die to the substrate; and
a second semiconductor die mounted on the substrate, covering at least a portion of the cavity including the first semiconductor die.
13. The semiconductor device of claim 12 , further comprising a dielectric material filling a space in the cavity around edges of the first semiconductor die.
14. The semiconductor device of claim 12 , the substrate further comprising a solder mask layer, wherein the cavity is defined by an opening in the solder mask.
15. The semiconductor device of claim 12 , the substrate further comprising a layer of conductive material on a dielectric layer, wherein the cavity is defined by an absence of the electrically conductive material in an area.
16. The semiconductor device of claim 12 , wherein a depth of the cavity is substantially equal to a thickness of the first semiconductor die.
17. The semiconductor device of claim 12 , wherein a depth of the cavity is greater than a thickness of the first semiconductor die.
18. The semiconductor device of claim 12 , wherein the first semiconductor die is a controller die.
19. The semiconductor device of claim 18 , wherein the second semiconductor die is a memory die.
20. A method of making a semiconductor device, comprising:
(a) forming a substrate including a dielectric layer and a conductive layer on the dielectric layer, the conductive layer including a conductance pattern including electrical traces and contact pads;
(b) forming a solder mask layer over the conductive layer;
(c) forming a cavity in the substrate, down to the dielectric layer at a bottom of the cavity;
(d) mounting a first semiconductor die in the cavity, electrically isolated on the dielectric layer, the first semiconductor die including die bond pads;
(e) printing electrical traces between the contact pads of the substrate and the die bond pads of the first semiconductor die to electrically connect the first semiconductor die to the substrate; and
(f) mounting a second semiconductor die on the substrate, covering at least a portion of the cavity including the first semiconductor die.
21. The method of claim 20 , further comprising a step (g) of filling a space between edges of the first semiconductor die and cavity with a dielectric material.
22. The method of claim 21 , further comprising a step (h) of removing the dielectric material or contamination from the die bond pads after said step (g) with a laser.