Semiconductor device and method of forming thermal lid for balancing warpage and thermal management
A semiconductor device has a first semiconductor die and an encapsulant deposited over the first semiconductor die. An interconnect structure is formed over the first semiconductor die and encapsulant. A thermal interface material is formed over the first semiconductor die and encapsulant. A stiffening layer is formed over the first semiconductor die and an edge portion of the encapsulant. Alternatively, an insulating layer is formed adjacent to the first semiconductor die and a stiffening layer is formed over the insulating layer. The stiffening layer includes metal, ferrite, ceramic, or semiconductor material. A heat spreader is disposed over the first semiconductor die and a central portion of the encapsulant. Openings are formed in the heat spreader. A recess is formed in the heat spreader along an edge of the heat spreader. A coefficient of thermal expansion (CTE) of the stiffening layer is less than a CTE of the heat spreader.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming a stiffening layer over the semiconductor die and encapsulant; and
forming a heat spreader over the semiconductor die.
2. The method of claim 1 , further including forming the stiffening layer over an edge portion of the encapsulant.
3. The method of claim 1 , further including forming the heat spreader over a central portion of the encapsulant.
4. The method of claim 1 , further including forming an interconnect structure over the semiconductor die and encapsulant.
5. The method of claim 1 , further including forming a recess in the heat spreader, the recess disposed along an edge of the heat spreader.
6. The method of claim 1 , further including:
forming an opening in the stiffening layer; and
disposing the heat spreader within the opening in the stiffening layer.
7. A semiconductor device, comprising:
a first semiconductor die;
an encapsulant deposited over the first semiconductor die;
a stiffening layer disposed over the encapsulant; and
a heat spreader disposed over the first semiconductor die.
8. The semiconductor device of claim 7 , further including a plurality of openings formed in the heat spreader.
9. The semiconductor device of claim 7 , wherein the stiffening layer is disposed over an edge portion of the encapsulant.
10. The semiconductor device of claim 7 , wherein the stiffening layer is disposed adjacent to the heat spreader.
11. The semiconductor device of claim 7 , wherein a coefficient of thermal expansion (CTE) of the stiffening layer is less than a CTE of the heat spreader.
12. The semiconductor device of claim 7 , further including a second semiconductor die disposed adjacent to the first semiconductor die.
13. A semiconductor device, comprising:
a first semiconductor die;
an encapsulant deposited over the first semiconductor die;
a thermal interface material formed over the first semiconductor die;
a heat spreader disposed over the first semiconductor die and encapsulant, the heat spreader including an opening extending to the thermal interface material; and
a stiffening layer formed over the encapsulant.
14. The semiconductor device of claim 13 , further including a recess formed in the heat spreader along an edge of the heat spreader.
15. The semiconductor device of claim 13 , further including the stiffening layer formed adjacent to the first semiconductor die.
16. The semiconductor device of claim 13 , wherein the stiffening layer includes a metal, a ferrite material, a ceramic material, or a semiconductor material.
17. The semiconductor device of claim 13 , further including a second semiconductor die disposed adjacent to the first semiconductor die.
18. A semiconductor device, comprising:
a first semiconductor die;
a stiffening layer disposed over the first semiconductor die;
a heat spreader disposed over the first semiconductor die; and
a thermal interface material formed over the semiconductor die, the stiffening layer and heat spreader mounted to the thermal interface material.
19. The semiconductor device of claim 18 , wherein the heat spreader further includes an opening formed through the heat spreader.
20. The semiconductor device of claim 18 , wherein the heat spreader further includes a recess formed along an edge of the heat spreader.
21. The semiconductor device of claim 18 , further including a second semiconductor die disposed adjacent to the first semiconductor die.