IP Library Granted Patent US 9,766,544
Granted Patent B2
US 9,766,544 · App. 14/549,911 · Granted Sep 19, 2017

Composition for forming topcoat layer and resist pattern formation method employing the same

Inventors: Hyun-woo Kim (Seongnam-si, KR); Cheol hong Park (Seoul, KR); Tetsuo Okayasu (Kakegawa, JP); Xiaowei Wang (Kakegawa, JP); Georg Pawlowski (Kakegawa, JP); Yusuke Hama (Kakegawa, JP)
Assignees: Samsung Electronics Co., LTD.; AZ Electronics Materials (Luxembourg) S.A.R.L.
G03F7/2004C09D5/00C09D7/1225G03F7/091G03F7/11
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Quick Facts
Patent No.
US 9,766,544
App. No.
14/549,911
Granted
Sep 19, 2017
Kind
B2
Abstract

Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.

Claims (31)

1. A composition for forming a topcoat layer, the composition comprising:

a graphene derivative including a hydrophilic group;

a solvent; and

a binder including a deep-ultraviolet absorbing group, wherein:

the graphene derivative is present in an amount of about 0.5 to about 10 wt % based on a total weight of the composition,

the binder is present in an amount about 0.01 to about 10 wt % based on a total weight of the composition,

the graphene derivative and the binder are present in a weight ratio of about 30:70 to about 50:50 in the composition, and

an oxygen content of the graphene derivative is equal to or greater than about 1 wt % and equal to or less than about 10 wt % based on a total weight of the graphene derivative.

2. The composition as claimed in claim 1 , wherein the hydrophilic group is selected from a hydroxyl group, a carboxyl group, an amino group, an amido group, a nitro group, a cyano group, a polyalkyleneoxide group, and a sulfo group.

3. The composition as claimed in claim 1 , wherein the graphene derivative is obtained by oxidizing graphene.

4. The composition as claimed in claim 1 , wherein a weight average molecular weight of the graphene derivative is about 1000 to about 20000.

5. A composition for forming a topcoat layer, the composition comprising:

a nonionic surfactant;

a graphene derivative including a hydrophilic group;

a solvent; and

a binder including a deep-ultraviolet absorbing group, wherein:

the graphene derivative is present in an amount of about 0.5 to about 10 wt % based on a total weight of the composition,

the binder is present in an amount about 0.01 to about 10 wt % based on a total weight of the composition, and

an oxygen content of the graphene derivative is equal to or greater than about 1 wt % and equal to or less than about 10 wt % based on a total weight of the graphene derivative.

6. The composition as claimed in claim 5 , wherein an amount of the nonionic surfactant is about 0.01 to about 0.5 wt % based on a total weight of the composition.

7. A pattern formation method, comprising:

disposing a resist composition on a substrate, to form a resist layer;

coating the resist layer with a topcoat composition for forming a topcoat layer, the topcoat composition including:

a graphene derivative including a hydrophilic group; and

a solvent;

heating the topcoat composition to harden the topcoat composition;

subjecting the resist layer to exposure using extreme ultraviolet light; and

developing exposed resist layer with an alkali aqueous solution.

8. The pattern formation method as claimed in claim 7 , wherein the extreme ultraviolet light has a wavelength in a range of about 5 to about 20 nm.

9. The pattern formation method as claimed in claim 8 , wherein the topcoat composition has a thickness of about 1 to about 100 nm on the resist layer.

10. The pattern formation method as claimed in claim 7 , wherein the heating step is carried out at a temperature of about 25 to about 150° C.

Assignments (7)
MERGER Recorded Jul 27, 2020
From: RIDGEFIELD ACQUISITION
To: AZ ELECTRONIC MATERIALS S.À R.L.
Reel/Frame 053323/0591 →
CHANGE OF LEGAL ENTITY Recorded Jul 27, 2020
From: AZ ELECTRONIC MATERIALS S.À R.L.
To: AZ ELECTRONIC MATERIALS GMBH
Reel/Frame 053323/0760 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 27, 2020
From: AZ ELECTRONIC MATERIALS GMBH
To: MERCK PATENT GMBH
Reel/Frame 053323/0770 →
MERGER Recorded Jul 27, 2020
From: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L.
To: RIDGEFIELD ACQUISITION
Reel/Frame 053324/0198 →
CHANGE OF ADDRESS Recorded Jan 12, 2017
From: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L.
To: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L.
Reel/Frame 041345/0585 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2014
From: KIM, HYUN-WOO; PARK, CHEOL HONG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 034229/0722 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2014
From: OKAYASU, TETSUO; WANG, XIAOWEI; PAWLOWSKI, GEORG; HAMA, YUSUKE
To: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
Reel/Frame 034229/0765 →
Priority Claims (2)
JP 2013-242092 · Nov 22, 2013 · national
KR 10-2014-0042023 · Apr 8, 2014 · national
Continuity (1)
Related Publication 20150147701A1 · May 28, 2015