Buried waveguide photodetector
A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the STI region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide. Within a second region of the STI region, a second germanium material is deposited adjacent a second side wall of the semiconductor optical waveguide, whereby the second side wall opposes the first side wall. The first and second germanium material form an active region that evanescently receives propagating optical signals from the first and second side wall of the semiconductor optical waveguide.
1. An integrated photonic semiconductor structure comprising:
a substrate;
an isolation region;
a CMOS device located on the substrate;
a semiconductor optical waveguide structure located on the substrate and electrically isolated from the CMOS device by the isolation region, the semiconductor optical waveguide structure having a first side wall and a second side wall that opposes the first side wall;
a photodetector located within the isolation region, the photodetector having a first and a second germanium active region, the first germanium active region located adjacent to the first side wall of the waveguide structure and the second germanium active region located adjacent to the second side wall of the waveguide structure,
wherein the first and the second germanium active region evanescently receive propagating optical signals from the first and the second side wall of the semiconductor optical waveguide, and
the first germanium active region is separated from the first side wall of the semiconductor optical waveguide by a first oxide liner, and the second germanium active region is separated from the second side wall of the semiconductor optical waveguide by a second oxide liner.
2. The structure of claim 1 , wherein the first and the second oxide liner comprise oxide layers each having a thickness of about 20-40 nm.
3. The structure of claim 1 , wherein the shallow trench isolation region comprises a silicon dioxide (SiO 2 ) fill material.
4. The structure of claim 1 , wherein the first and the second germanium active region comprises a thickness of about 50-200 nm.
5. The structure of claim 1 , wherein the semiconductor optical waveguide propagates optical signals having a wavelength of about 1550 nm.
6. The structure of claim 1 , wherein the semiconductor optical waveguide propagates optical signals having a wavelength of about 1310 nm.
7. The structure of claim 1 , further comprising a first contact within the first germanium active region.
8. The structure of claim 7 , further comprising a second contact within the second germanium active region.
9. The structure of claim 8 , wherein the first contact and the second contact establish an electrically conductive connection with the photodetector.
10. A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
a substrate;
an isolation region;
a CMOS device located on the substrate;
a semiconductor optical waveguide structure located on the substrate and electrically isolated from the CMOS device by the isolation region, the semiconductor optical waveguide structure having a first side wall and a second side wall that opposes the first side wall;
a photodetector located within the isolation region, the photodetector having a first and a second germanium active region, the first germanium active region located adjacent to the first side wall of the waveguide structure and the second germanium active region located adjacent to the second side wall of the waveguide structure,
wherein the first and the second germanium active region evanescently receive propagating optical signals from the first and the second side wall of the semiconductor optical waveguide, and
the first germanium active region is separated from the first side wall of the semiconductor optical waveguide by a first oxide liner, and the second germanium active region is separated from the second side wall of the semiconductor optical waveguide by a second oxide liner.
11. The design structure of claim 10 , wherein the first and the second oxide liner comprise oxide layers each having a thickness of about 20-40 nm.
12. An integrated photonic semiconductor structure comprising:
a substrate;
an isolation region;
a CMOS device located on the substrate;
a semiconductor optical waveguide structure located on the substrate and electrically isolated from the CMOS device by the isolation region, the semiconductor optical waveguide structure having a first side wall and a second side wall that opposes the first side wall;
a photodetector located within the isolation region, the photodetector having a first and a second germanium active region, the first germanium active region located adjacent to the first side wall of the waveguide structure and the second germanium active region located adjacent to the second side wall of the waveguide structure,
wherein the first and the second germanium active region evanescently receive propagating optical signals from the first and the second side wall of the semiconductor optical waveguide, and
the first germanium active region is separated from the first side wall of the semiconductor optical waveguide and the second germanium active region is separated from the second side wall of the semiconductor optical waveguide.