Heterogeneous integration of group III nitride on silicon for advanced integrated circuits

1. A method of integrating a Group III nitride material and silicon, said method comprising:

providing a structure comprising, from bottom to top, a (100) silicon layer, a (111) silicon layer located on an uppermost surface of the (100) silicon layer, a Group III nitride material layer located on an uppermost surface of the (111) silicon layer, and a blanket layer of dielectric material located on an uppermost surface of the Group III nitride material layer;

forming an opening through the blanket layer of dielectric material, the Group III nitride material layer, the (111) Si layer and partially within the (100) silicon layer, wherein a surface of the (100) silicon layer beneath the uppermost surface of the (100) silicon layer is exposed;

forming a conformal dielectric material liner atop remaining portions of the blanket layer of dielectric material and within said opening;

removing horizontal portions of the conformal dielectric material liner to provide template dielectric spacers partially covering said exposed surface of the (100) silicon layer;

forming an epitaxial semiconductor material on a remaining portion of said exposed surface of the (100) silicon layer; and

removing portions of the epitaxial semiconductor material, portions of said template dielectric spacers, and remaining portions of the blanket layer of dielectric material to expose the uppermost surface of remaining portions of the Group III nitride material layer.

2. The method of claim 1 , further comprising a buried insulator layer located beneath and in contact with a bottommost surface of the (100) silicon layer, and a semiconductor substrate located beneath and in contact with a bottommost surface of the buried insulator layer.

3. The method of claim 1 , wherein said Group III nitride material layer is formed on said uppermost surface of the (111) silicon layer by metalorganic chemical vapor deposition.

4. The method of claim 3 , wherein said metalorganic chemical vapor deposition comprises introducing a Group III-containing precursor and a nitride precursor into a reactor chamber and depositing said precursors at a temperature of 850° C. or greater.

5. The method of claim 1 , wherein said removing horizontal portions of the conformal dielectric material liner comprises an anisotropic etch.

6. A method of integrating a Group III nitride material and silicon, said method comprising:

providing a structure comprising, from bottom to top, a (100) silicon layer, a buried insulator layer located on an uppermost surface of the (100) silicon layer, a (111) silicon layer located on an uppermost surface of the buried insulator layer, a Group III nitride material layer located on an uppermost surface of the (111) silicon layer, and a blanket layer of dielectric material located on an uppermost surface of the Group III nitride material layer;

forming an opening through the blanket layer of dielectric material, and the Group III nitride material layer to expose a portion of the uppermost surface of the (111) silicon layer;

forming a conformal dielectric material liner atop remaining portions of the blanket layer of dielectric material and within said opening;

removing horizontal portions of the conformal dielectric material liner to provide a template dielectric spacers partially covering said exposed portion of the uppermost surface of the (100) silicon layer;

forming an epitaxial semiconductor material on a remaining exposed portion of the uppermost surface of the (111) silicon layer; and

removing portions of the epitaxial semiconductor material, portions of said template dielectric spacers and remaining portions of the blanket layer of dielectric material to expose the uppermost surface of remaining portions of the Group III nitride material layer.

7. The method of claim 6 , wherein said Group III nitride material layer is formed on said uppermost surface of the (111) silicon layer by metalorganic chemical vapor deposition.

8. The method of claim 7 , wherein said metalorganic chemical vapor deposition comprises introducing a Group III-containing precursor and a nitride precursor into a reactor chamber and depositing said precursors at a temperature of 850° C. or greater.

9. The method of claim 6 , wherein said removing horizontal portions of the conformal dielectric material liner comprises an anisotropic etch.

10. A method of integrating a Group III nitride material and silicon, said method comprising:

providing a structure comprising, from bottom to top, a layer of sapphire, a (100) silicon layer located on an uppermost surface of the layer of sapphire, and a blanket layer of dielectric material located on an uppermost surface of the (100) silicon layer;

forming an opening with said structure to expose the uppermost surface of the layer of sapphire; and

growing a Group III nitride material layer from exposed sidewalls of the (100) silicon layer; and

removing portions Group III nitride material layer from atop remaining portions of the blanket layer of dielectric material.

11. The method of claim 10 , wherein said growing said Group III nitride material layer comprises metalorganic chemical vapor deposition.

12. The method of claim 11 , wherein growing said metalorganic chemical vapor deposition comprises introducing a Group III-containing precursor and a nitride precursor into a reactor chamber and depositing said precursors at a temperature of 850° C. or greater.

13. A semiconductor structure comprising:

a (100) silicon layer having an uppermost surface;

a patterned (111) silicon layer located on the uppermost surface of the (100) silicon layer;

a patterned Group III nitride material layer located on an uppermost surface of the patterned (111) silicon layer; and

an epitaxial semiconductor material layer located within an opening in said patterned (111) silicon layer and said patterned Group III nitride material layer, wherein said epitaxial semiconductor material layer has a bottommost surface in direct contact with a portion of said (100) silicon layer, and an uppermost surface that is coplanar within the uppermost surface of said patterned Group III nitride material layer, and wherein sidewall surfaces of the epitaxial semiconductor material layer are separated from sidewall surfaces of said patterned (111) silicon layer and said patterned Group III nitride material layer by a dielectric spacer.

14. The semiconductor structure of claim 13 , further comprising a buried insulator layer located beneath and in contact with a bottommost surface of the (100) silicon layer, and a semiconductor substrate located beneath and in contact with a bottommost surface of the buried insulator layer.

15. The semiconductor structure of claim 13 , wherein said portion of said (100) silicon layer that is in direct contact with said bottommost surface of the epitaxial semiconductor material is a portion of said uppermost surface of the (100) silicon layer.

16. The semiconductor structure of claim 13 , wherein said portion of said (100) silicon layer that is in direct contact with said bottommost surface of the epitaxial semiconductor material is a surface of the (100) silicon layer that is located beneath said uppermost surface of the (100) silicon layer.

17. The semiconductor structure of claim 15 , wherein said dielectric spacer is a composite spacer comprising a bottom oxide spacer portion and an upper dielectric material spacer portion.

18. The semiconductor structure of claim 13 , further comprising at least one semiconductor device located upon said epitaxial semiconductor material layer, said patterned Group III nitride material layer, or both said epitaxial semiconductor material layer, said patterned Group III nitride material layer.

19. A semiconductor structure comprising:

a layer of sapphire;

a patterned (100) silicon layer located on an uppermost surface of sapphire; and

a Group III nitride material layer located within an opening in said patterned (100) silicon layer and located on portion of said uppermost surface layer of sapphire, wherein a portion of said Group III nitride material layer is in direct contact with sidewalls of said patterned (100) silicon layer.

20. The semiconductor structure of claim 19 , further comprising a semiconductor device, wherein the semiconductor device is formed on a portion of the uppermost surface layer of the patterned (100) silicon layer.