Substrate processing method, substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
View Patent ↗There is provided a substrate processing method, including: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed.
1. A substrate processing method, comprising:
(a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond;
(b) heating the substrate to a first temperature and supplying a process gas to the heated substrate, thereby modifying the film containing the silazane bond; and
(c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed.
2. The substrate processing method according to claim 1 , further comprising:
(d) supplying a process liquid into the processing vessel; and
(e) generating the process gas by vaporizing the process liquid using a vaporizer in the processing vessel.
3. The substrate processing method according to claim 1 , wherein an oxygen-containing gas is supplied to the substrate at a first flow rate in (b), and the oxygen-containing gas is supplied thereto at a second flow rate larger than the first flow rate before (c).
4. The substrate processing method according to claim 1 , further comprising:
(f) vacuum-exhausting the inside of the processing vessel after (c); and
(j) venting the inside of the processing vessel to an atmospheric pressure after (f).
5. The substrate processing method according to claim 1 , wherein the process gas is a hydrogen peroxide gas.