Semiconductor package, printed circuit board substrate and semiconductor device
A semiconductor package includes: a semiconductor integrated circuit; an interlayer film disposed on the semiconductor integrated circuit; a rewiring layer disposed on the interlayer film; post electrodes disposed on the rewiring layer; a protective layer which is disposed on the interlayer film and covers the rewiring layer and the post electrodes; and a plurality of balls which is respectively disposed on the post electrodes and is connected to the rewiring layer, wherein balls existing on a wiring path of internal wirings connected to inner lands of a plurality of lands, which is arranged on a printed circuit board substrate to face the plurality of balls and is connectable to the plurality of balls, are non-connected to the rewiring layer.
1. A semiconductor device comprising:
a semiconductor package including a semiconductor integrated circuit, an interlayer film disposed on the semiconductor integrated circuit, a rewiring layer disposed on the interlayer film, post electrodes disposed on the rewiring layer, a protective layer which is disposed on the interlayer film and covers the rewiring layer and the post electrodes, and a plurality of balls which is respectively disposed on the post electrodes and is connected to the rewiring layer; and
a printed circuit board substrate including an insulating substrate, a plurality of lands which is arranged on the insulating substrate to face the plurality of balls and is respectively connectable to the plurality of balls, and wirings which are arranged on the insulating substrate and are respectively connected to the plurality of lands,
wherein balls existing on a wiring path of internal wirings, which are connected to lands arranged in the inside on the insulating substrate, are removed,
wherein the internal wirings are formed between balls adjacent to each other when viewed from top, and
wherein between the adjacent balls, a center of the rewiring layer and centers of the internal wirings deviate from each other when viewed from top.
2. The semiconductor device of claim 1 , wherein the plurality of balls are arranged in a form of a lattice when the protective layer is viewed from top.
3. The semiconductor device of claim 2 , wherein the lattice is one of a square lattice, a rectangular lattice, a triangular lattice and a hexagonal lattice.
4. The semiconductor device of claim 1 , wherein an arrangement pitch rule of the plurality of balls is allowed to be alleviated to reduce a chip size of the semiconductor integrated circuit.
5. The semiconductor device of claim 4 , wherein the arrangement pitch rule of the plurality of balls is alleviated from 0.5L to 0.4L (L is an arbitrary constant).
6. The semiconductor device of claim 4 , wherein the arrangement pitch rule of the plurality of balls is alleviated from 0.4L to 0.3L (L is an arbitrary constant).
7. The semiconductor device of claim 1 , wherein balls arranged in corners and a central portion of the semiconductor package are not removed so that connectivity with the printed circuit board substrate is secured.
8. The semiconductor device of claim 1 , wherein the semiconductor package is a wafer level chip size package.
9. A semiconductor device, comprising:
a semiconductor package including a semiconductor chip having a first front surface and a first rear surface, a rewiring layer formed on the first front surface of the semiconductor chip and electrically connected with the semiconductor chip, and a plurality of electrodes formed on the rewiring layer and electrically connected with the rewiring layer; and
a substrate having a second front surface, which faces the first front surface, and a second rear surface, the substrate including wirings respectively connected to the plurality of electrodes, the wirings being formed on the second front surface from an inside of a portion facing the semiconductor package to an outside of a periphery of the portion facing the semiconductor package,
wherein the rewiring layer and the wirings are formed between electrodes adjacent to each other when viewed from top such that a center of the rewiring layer and centers of the wirings deviate from each other.
10. The semiconductor device of claim 9 , wherein between the adjacent electrodes when viewed from top, the wiring layer and the wirings partially overlap.
11. The semiconductor device of claim 10 , wherein between the adjacent electrodes when viewed from top, an area of the rewiring layer not overlapping with the wirings is larger than an area of the rewiring layer overlapping with the wirings.
12. The semiconductor device of claim 9 , wherein between the adjacent electrodes when viewed from top, the rewiring layer is interposed between two or more wirings.
13. The semiconductor device of claim 9 , wherein the rewiring layer and the wirings are spaced apart from each other when viewed from top.
14. The semiconductor device of claim 13 , wherein between the adjacent electrodes when viewed from top, the rewiring layer is interposed between two or more wirings.
15. The semiconductor device of claim 9 , wherein between the adjacent electrodes when viewed from top, a plurality of dummy electrodes, which is physically spaced apart from the rewiring layer, is formed to overlap with the rewiring layer.
16. The semiconductor device of claim 15 , wherein an insulating layer is formed between the rewiring layer and the plurality of dummy electrodes.
17. The semiconductor device of claim 9 , wherein the plurality of electrodes is arranged in a form of a lattice when viewed from top.
18. The semiconductor device of claim 17 , wherein the lattice is one of a square lattice, a rectangular lattice, a triangular lattice and a hexagonal lattice.
19. The semiconductor device of claim 9 , wherein an arrangement pitch rule of the plurality of electrodes is allowed to be alleviated to reduce a chip size of the semiconductor integrated circuit.
20. The semiconductor device of claim 19 , wherein the arrangement pitch rule of the plurality of electrodes is alleviated from 0.5L to 0.4L (L is an arbitrary constant).
21. The semiconductor device of claim 19 , wherein the arrangement pitch rule of the plurality of electrodes is alleviated from 0.4L to 0.3L (L is an arbitrary constant).
22. The semiconductor device of claim 9 , wherein electrodes arranged in corners and a central portion of the semiconductor package are not removed so that connectivity with the printed circuit board substrate is secured.
23. The semiconductor device of claim 9 , wherein a part of distances between adjacent wirings is same.
24. The semiconductor device of claim 9 , wherein the semiconductor package has a pair of first sides facing each other when viewed from top and a pair of second sides facing each other when viewed from top, the second sides being shorter than the first sides, and
wherein the plurality of electrodes is arranged in a plurality of electrode rows along an elongate direction of the first sides, and in at least two electrode rows, a region where the center of the rewiring layer and the centers of the wirings deviate from each other when viewed from top is interposed between adjacent electrodes.