IP Library Granted Patent US 9,496,177
Granted Patent B2
US 9,496,177 · App. 14/721,443 · Granted Nov 15, 2016

Method and apparatus for plasma dicing a semi-conductor wafer

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Quick Facts
Patent No.
US 9,496,177
App. No.
14/721,443
Granted
Nov 15, 2016
Kind
B2
Abstract

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Claims (15)

1. A method for plasma dicing a substrate, the method comprising:

providing a process chamber having a wall;

providing a plasma source adjacent to the wall of the process chamber;

providing a work piece support within the process chamber;

providing an electrostatic chuck within said work piece support;

providing a lift mechanism within the process chamber;

placing a work piece onto said work piece support using said lift mechanism, said work piece having a support film, a frame and the substrate, said lift mechanism engaging a bottom surface of said work piece outside an outer diameter of the substrate of said work piece;

electrostatically clamping said work piece to said work piece support using said electrostatic clamp;

generating a plasma using the plasma source; and

etching the work piece using the generated plasma.

2. The method according to claim 1 wherein said lift mechanism engaging the frame of said work piece.

3. The method according to claim 1 wherein said lift mechanism engaging said work piece at least five millimeters outside of said outer diameter of the substrate of said work piece.

4. The method according to claim 1 further comprising said lift mechanism penetrating said electrostatic chuck outside of said outer diameter of the substrate of said work piece.

5. The method according to claim 1 further comprising said electrostatic chuck not being penetrated by said lift mechanism.

6. The method according to claim 1 wherein said lift mechanism being external to said work piece support.

Assignments (15)
RELEASE OF SECURITY INTEREST Recorded Aug 3, 2022
From: HSBC BANK USA, N.A.
To: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; PLASMA-THERM IC-DISC, INC.; PLASMA-THERM NES, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; HINE AUTOMATION, LLC; DRYTEK LLC; LOGIX TECHNOLOGY HOLDINGS, LLC
Reel/Frame 061070/0642 →
SECURITY INTEREST Recorded Jun 28, 2022
From: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; HINE AUTOMATION, LLC; DRYTEK, LLC; PLASMA-THERM NES, LLC; LOGIX TECHNOLOGY HOLDINGS, LLC; PLASMA THERM IC-DISC, INC.
To: VALLEY NATIONAL BANK
Reel/Frame 060447/0766 →
SECURITY INTEREST Recorded Nov 23, 2021
From: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; PLASMA-THERM NES, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 058899/0658 →
SECURITY INTEREST Recorded Nov 23, 2021
From: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; PLASMA-THERM NES, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 058945/0169 →
SECURITY INTEREST Recorded May 15, 2020
From: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; PLASMA-THERM, NES, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 052679/0001 →
SECURITY INTEREST Recorded May 15, 2020
From: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; PLASMA-THERM NES, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 052679/0788 →
SECURITY INTEREST Recorded Nov 30, 2018
From: PLASMA-THERM IC-DISC, INC.; PLASMA-THERM, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 047687/0418 →
SECURITY INTEREST Recorded Nov 30, 2018
From: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; PLASMA-THERM NES, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 047688/0061 →
SECURITY INTEREST Recorded Nov 30, 2018
From: HINE AUTOMATION, LLC; PLASMA-THERM, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 047688/0644 →
SECURITY INTEREST Recorded Nov 30, 2018
From: DRYTEK, LLC; LOGIX TECHNOLOGY HOLDINGS, LLC; PLASMA-THERM, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 047688/0813 →
SECURITY INTEREST Recorded Nov 30, 2018
From: PLASMA-THERM IC-DISC, INC.; PLASMA-THERM, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 047689/0098 →
SECURITY INTEREST Recorded Nov 29, 2018
From: HINE AUTOMATION, LLC; PLASMA-THERM, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 047687/0357 →
SECURITY INTEREST Recorded Nov 29, 2018
From: RAJE TECHNOLOGY GROUP, LLC; PLASMA-THERM, LLC; REV-TECH MANUFACTURING SOLUTIONS, LLC; PLASMA-THERM NES, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 048173/0954 →
SECURITY INTEREST Recorded Nov 29, 2018
From: DRYTEK, LLC; LOGIX TECHNOLOGY HOLDINGS, LLC; PLASMA-THERM, LLC
To: HSBC BANK USA, N.A.
Reel/Frame 048174/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2015
From: JOHNSON, CHRIS; JOHNSON, DAVID; MARTINEZ, LINNELL; PAYS-VOLARD, DAVID; GAULDIN, RICH; WESTERMAN, RUSSELL; GRIVNA, GORDON M.; ON SEMICONDUCTOR CORPORATION; SEMICONDUCTOR COMPONENTS INDUSTRIES LLC; ON SEMICONDUCTOR TRADING, SARL
To: PLASMA-THERM LLC
Reel/Frame 035789/0969 →