IP Library Granted Patent US 10,340,160
Granted Patent B2
US 10,340,160 · App. 14/885,804 · Granted Jul 2, 2019

Method of forming a semiconductor die cutting tool

Inventors: Gordon M. Grivna (Mesa, AZ); John M. Parsey, Jr. (Phoenix, AZ)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L21/67092B23P15/28B28D5/0005B28D5/0011H01L21/78Y10T83/0333
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Quick Facts
Patent No.
US 10,340,160
App. No.
14/885,804
Granted
Jul 2, 2019
Kind
B2
Abstract

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.

Claims (8)

1. A method of forming a tool for a semiconductor wafer comprising:

forming the tool to reduce a thickness of a semiconductor material formed on a semiconductor wafer;

forming the tool with a cutting tip and cutting surfaces that are configured to penetrate into the semiconductor material to form reduced thickness regions in the semiconductor material including forming some of the cutting surfaces to intersect and form a cutting volume; and

forming an accumulation region of the tool with a recess having a first volume for accepting portions of the semiconductor material displaced from within the semiconductor material by the penetration wherein the first volume is no less than the cutting volume.

2. The method of claim 1 further including forming the cutting tip and a the cutting surface adjacent to the cutting tip and extending from the cutting tip toward a central support section and terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section.

3. The method of claim 2 further including forming a depth stop spaced a first distance from the cutting tip toward the central support section wherein a cutting volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop and wherein the cutting volume is approximately equal to the first volume.

4. The method of claim 2 including forming the accumulation region as a recess disposed within a central support section, the accumulation region positioned adjacent to an end of a cutting surface of the cutting surfaces and extending from the distal end into the central support section.

5. The method of claim 2 further including forming the cutting tip and cutting surfaces for being rolled along a surface of the semiconductor wafer, and forming the cutting surface attached to a central support section having a surface that forms a depth stop to limit the depth that the cutting tip extends into the semiconductor wafer.

Assignments (4)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 16, 2015
From: GRIVNA, GORDON M.; PARSEY, JOHN M., JR.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 036814/0596 →
Continuity (5)
Division 14484843 · Sep 12, 2014
Division 13486675 · Jun 1, 2012
Continuation In Part 12749370 · Mar 29, 2010
Continuation 11834924 · Aug 7, 2007
Related Publication 20160035599A1 · Feb 4, 2016