Thermal interface material layer and package-on-package device including the same
Provided are a thermal interface material layer and a package-on-package device including the same. The package-on-package device may include a thermal interface material layer interposed between lower and upper semiconductor packages and configured to have a specific physical property. Accordingly, it is possible to prevent a crack from occurring in a lower semiconductor chip, when a solder ball joint process is performed to mount the upper semiconductor package on the lower semiconductor package.
1. A thermal interface material layer interposed between a lower semiconductor package and an upper semiconductor package, the thermal interface material layer having a modulus of elasticity of 500 kPa or less,
wherein the thermal interface material layer includes a resin layer and filler particles distributed in the resin layer, and
the resin layer has a modulus of elasticity of 500 kPA or less.
2. The thermal interface material layer of claim 1 , wherein the thermal interface material layer has Mohs hardness that is lower than 7.
3. The thermal interface material layer of claim 1 , wherein the thermal interface material layer has thermal conductivity of 1 W/mK or higher.
4. The thermal interface material layer of claim 1 , wherein the resin layer is formed of a silicon-based compound or a rubber-based compound.
5. The thermal interface material layer of claim 1 , wherein the filler particles have Mohs hardness that is lower than 7.
6. The thermal interface material layer of claim 5 , wherein the filler particles are configured to exhibit an insulation property.
7. The thermal interface material layer of claim 6 , wherein the filler particles are at least one of boron nitride particles and zinc oxide particles.
8. The thermal interface material layer of claim 6 , wherein at least one of the filler particles comprises a metal particle coated with an insulating layer, and the metal particle has Mohs hardness that is lower than 7.
9. The thermal interface material layer of claim 1 , wherein a content of the filler particles in the thermal interface material layer ranges from 60 wt % to 95 wt %.
10. The thermal interface material layer of claim 1 , wherein the thermal interface material layer has a Mohs hardness that is lower than 7.
11. The thermal interface material layer of claim 10 , wherein the thermal interface material layer has modulus of elasticity of 500 kPa or less.
12. The thermal interface material layer of claim 10 , wherein the thermal interface material layer has thermal conductivity of 1 W/mK or higher.
13. The thermal interface material layer of claim 10 , wherein
the filler particles have Mohs hardness that is lower than 7.
14. The thermal interface material layer of claim 13 , wherein the filler particles are configured to exhibit an insulation property.
15. The thermal interface material layer of claim 13 , wherein the filler particles are at least one of boron nitride particles and zinc oxide particles.
16. The thermal interface material layer of claim 13 , wherein at least one of the filler particles comprises a metal particle coated with an insulating layer, and the metal particle has Mohs hardness that is lower than 7.
17. The thermal interface material layer of claim 1 , wherein the resin layer is formed of a silicon-based compound or a rubber-based compound.
18. The thermal interface material layer of claim 13 , wherein a content of the filler particles in the thermal interface material layer ranges from 60 wt % to 95 wt %.