Semiconductor packages and related methods
Methods of forming a semiconductor package. Implementations include providing a leadframe, coupling a semiconductor die or an electronic component to the leadframe, and encapsulating at least a portion of the semiconductor die or the electronic component using a mold compound leaving two or more leads of the leadframe exposed. The method may also include coating the two or more leads of the leadframe with an electrically conductive layer. The method may include fully electrically and physically singulating one or more tie bars between two or more leads of the leadframe, a lead of the two or more leads and a leadframe flag or any combination thereof. The method may also include singulating the leadframe to form one or more semiconductor packages.
1. A method of forming a semiconductor package comprising:
providing a lead frame;
coupling one of a semiconductor die and an electronic component to the lead frame;
encapsulating at least a portion of the one of the semiconductor die and the electronic component using a mold compound;
forming a trench through two or more leads of the lead frame and extending to the molding compound which exposes a complete side surface of the two or more leads of the lead frame;
coating the two or more leads of the lead frame including the complete side surface within the trench with an electrically conductive layer;
fully electrically and physically singulating one or more tie bars between one of:
two or more leads of the lead frame;
a lead of the two or more leads and a lead frame flag; and
any combination thereof; and
bending one or more edges of the lead frame prior to fully electrically and physically singulating the one or more tie bars.
2. The method of claim 1 , further comprising singulating the lead frame to form one or more semiconductor packages.
3. The method of claim 1 , further comprising partially physically singulating the one or more tie bars between one of:
the two or more leads of the lead frame;
the lead of the two or more leads and the lead frame flag; and
any combination thereof;
prior to coating the two or more leads of the lead frame with the electrically conductive layer.
4. The method of claim 1 , wherein bending one or more edges of the lead frame further comprises one of deflecting the one or more edges of the lead frame to form a simple bend and formed bending the one or more edges of the lead frame to form a stepped bend.
5. The method of claim 1 , wherein the lead frame comprises one or more half etched portions.
6. The method of claim 1 , further including forming a bond wire between a first lead and a second lead of the one or more leads of the leadframe.
7. The method of claim 6 , wherein fully electrically and physically singulating one or more tie bars further comprises singulating using one of a laser cutting process and a masking and etching cutting process.
8. The method of claim 1 , wherein a distance between the one or more leads of the lead frame and the one or more tie bars is a single predetermined width.
9. A method of processing an encapsulated lead frame comprising:
providing a encapsulated lead frame;
forming a trench completely through two or more leads of the encapsulated lead frame to expose a side surface of the two or more leads of the lead frame;
coating the two or more leads of an encapsulated lead frame including the side surface within the trench with an electrically conductive layer;
fully electrically and physically singulating one or more tie bars between one of:
two or more leads of the encapsulated lead frame;
a lead of the two or more leads and a lead frame flag; and
any combination thereof; and
bending one or more edges of the encapsulated lead frame prior to fully electrically and physically singulating the one or more tie bars.
10. The method of claim 9 , further comprising singulating the encapsulated lead frame to form one or more semiconductor packages.
11. The method of claim 9 , further comprising partially physically singulating the one or more tie bars between one of:
the two or more leads of the encapsulated lead frame;
the lead of the two or more leads and the lead frame flag; and
any combination thereof;
prior to coating the two or more leads of the encapsulated lead frame with the electrically conductive layer.
12. The method of claim 9 , wherein bending one or more edges of the encapsulated lead frame further comprises one of deflecting the one or more edges of the encapsulated lead frame to form a simple bend and formed bending the one or more edges of the encapsulated lead frame to form a stepped bend.
13. The method of claim 9 , wherein the encapsulated lead frame comprises one or more half etched portions.
14. The method of claim 9 , wherein fully electrically and physically singulating one or more tie bars further comprises singulating using one of a laser cutting process and a masking and etching cutting process.
15. The method of claim 9 , wherein a distance between the one or more leads of the encapsulated lead frame and the one or more tie bars is a single predetermined width.