Slurry composition and method for polishing substrate
Provided are a slurry composition to be used in chemical mechanical polishing (CMP), and a method for polishing a substrate. This slurry composition contains water, abrasive grains, and an alkylene polyalkylene oxide amine polymer having a solubility parameter in a range of 9-10. A preferred alkylene polyalkylene oxide amine polymer is given by general formula (1). (In general formula (1), m and n are positive integers, and A and R are alkylene oxide groups.)
1. A slurry composition for chemical mechanical polishing, containing:
water,
abrasive grit, and
a polymer containing at least two repeating structural units containing a tertiary amine, wherein the polymer is given by the following general formula (1):
wherein, m and n represent positive integers and A and R represent alkylene groups.
2. The slurry composition according to claim 1 , wherein the polymer has a weight average molecular weight of 5,000 to 100,000.
3. The slurry composition according to claim 1 , wherein the repeating structural unit contains an N-polyethylene oxide polymer, N-polypropylene oxide polymer or ethylene oxide-propylene oxide copolymer bound to N atoms.
4. The slurry composition according to claim 1 , wherein the polymer is present at 1 ppm to 5,000 ppm in the slurry composition.
5. The slurry composition according to claim 1 , further containing at least one water-soluble polymer selected from the group consisting of a cellulose derivative, poly-N-vinylpyrrolidone, poly-N-vinyl acetamide, polyglycerin, PEG, PEO, PEG-PPG copolymer, ethylene oxide ethylenediamine adduct, poly(2-ethyloxazoline), poly(vinyl alcohol), polyacrylic acid and polyacrylate.
6. A method for polishing a substrate, comprising the steps of:
adhering the slurry composition according to claim 1 to a polished substrate, and
polishing the polished substrate with a polishing pad using the slurry.