IP Library Granted Patent US 9,978,807
Granted Patent B2
US 9,978,807 · App. 15/187,022 · Granted May 22, 2018

Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods

Inventors: Martin F. Schubert (Boise, ID); Vladimir Odnoblyudov (Eagle, ID)
Assignee: Micron Technology, Inc.
H01L27/15H01L23/60H01L33/0075H01L33/0079H01L33/382H01L33/405H01L2924/0002H01L2933/0016
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Quick Facts
Patent No.
US 9,978,807
App. No.
15/187,022
Granted
May 22, 2018
Kind
B2
Abstract

Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

Claims (23)

1. A solid state transducer device, comprising:

a single support substrate;

a solid state emitter carried by the single support substrate; and

an electrostatic discharge device carried by the single support substrate and positioned between the support substrate and the solid state emitter, wherein the electrostatic discharge device comprises a first conductive material, a second conductive material, and a semiconductor material separating the first and second conductive materials,

wherein the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact, and wherein neither the electrostatic discharge device nor the solid state emitter have another support substrate connected between the single support substrate and either the electrostatic device or the solid state emitter.

2. The device of claim 1 wherein the electrostatic discharge device comprises a plurality of semiconductor junctions operably connected in series.

3. The device of claim 1 wherein the electrostatic discharge device comprises a plurality of electrostatic junctions operably connected in series, wherein individual electrostatic junctions comprise a portion of the first conductive material, a portion of the second conductive material, and a portion of the semiconductor material.

4. The device of claim 1 , further comprising a reflective material between at least a portion of the electrostatic discharge device and the solid state emitter.

5. The device of claim 3 wherein the first conductive material of one electrostatic junction is electrically connected with the second conductive material of an adjacent electrostatic junction.

6. The device of claim 4 wherein the reflective material is conductive.

7. A solid state transducer device, comprising:

a single support substrate;

a solid state emitter carried by the single support substrate;

an electrostatic discharge device carried by the single support substrate and positioned between the support substrate and the solid state emitter, the electrostatic discharge device and the solid state emitter sharing a common first contact and a common second contact, neither the electrostatic discharge device nor the solid state emitter having another support substrate connected between the single support substrate and either the electrostatic device or the solid state emitter;

a reflective material between the solid state emitter and the electrostatic discharge device; and

a via extending through the reflective material and at least a portion of the solid state emitter, and electrically connecting the solid state emitter to the electrostatic discharge device.

8. The device of claim 7 wherein the solid state emitter includes a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials.

9. The device of claim 8 wherein the electrostatic discharge device includes a first conductive material, a second conductive material, and a third a semiconductor material separating the first and second conductive materials, and wherein the via includes a third conductive material that electrically couples the second semiconductor material to the second conductive material.

10. A solid state transducer device, comprising:

a single support substrate;

a solid state emitter carried by the single support substrate; and

an electrostatic discharge device carried by the single support substrate, wherein the electrostatic discharge device is vertically aligned with the solid state emitter and positioned beneath the solid state emitter between the substrate and the solid state emitter, wherein the electrostatic discharge device comprises a first conductive material, a second conductive material, and a semiconductor material separating the first and second conductive materials,

wherein the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact, and wherein neither the electrostatic discharge device nor the solid state emitter have another support substrate connected between the single support substrate and either the electrostatic device or the solid state emitter.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050676/0782 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046635/0634 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 17, 2017
From: ODNOBLYUDOV, VLADIMIR; SCHUBERT, MARTIN F.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 041624/0664 →
SUPPLEMENT NO. 1 TO PATENT SECURITY AGREEMENT Recorded Aug 26, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 039841/0207 →
SUPPLEMENT NO. 1 TO PATENT SECURITY AGREEMENT Recorded Aug 25, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 039824/0681 →
Continuity (3)
Division 14460297 · Aug 14, 2014
Division 13223098 · Aug 31, 2011
Related Publication 20160372513A1 · Dec 22, 2016