IP Library Granted Patent US 10,719,177
Granted Patent B2
US 10,719,177 · App. 15/188,680 · Granted Jul 21, 2020

Excitation voltages for touch sensors

Inventors: Trond Jarle Pedersen (Trondheim, NO); John Stanley Dubery (Hants, GB)
Assignee: Atmel Corporation
G06F3/044G06F2203/04101G06F2203/04105
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Quick Facts
Patent No.
US 10,719,177
App. No.
15/188,680
Granted
Jul 21, 2020
Kind
B2
Abstract

A method including applying a first excitation voltage to an electrode of a touch sensor which charges a capacitive node associated with the electrode from a first voltage level to a second voltage level that is greater than the first voltage level. A first measurement measures a charge to change from the first voltage level to the second voltage level. A second excitation voltage is applied to the electrode which charges the capacitive node from the second voltage level to a third voltage level that is greater than the second voltage level. The capacitive node is discharged from the third voltage level to a fourth voltage level that is less than the second voltage level. A second measurement measures a charge to change from the third voltage level to the fourth voltage level. A measured charge signal is generated based on the first measurement and the second measurement.

Claims (57)

1. An apparatus comprising:

one or more processors; and

one or more memory units coupled to the one or more processors, the one or more memory units collectively storing logic, the logic being executed by the one or more processors so as to cause the one or more processors to perform operations comprising:

applying a first excitation voltage to an electrode of a touch sensor, applying the first excitation voltage to the electrode charges, with a first charge, a capacitive node associated with the electrode from a first voltage level to a second voltage level that is greater than the first voltage level;

performing a first charge measurement to measure the change from the first voltage level to the second voltage level;

applying a second excitation voltage to the electrode of the touch sensor, applying the second excitation voltage to the electrode charging the capacitive node from the second voltage level to a third voltage level that is greater than the second voltage level;

discharging the capacitive node from the third voltage level to a fourth voltage level that is less than the second voltage level;

performing a second charge measurement to measure the change from the third voltage level to the fourth voltage level; and

generating a measured charge signal based on the first charge measurement and the second charge measurement;

wherein the first excitation voltage and the second excitation voltage are each derived from a reference voltage.

2. The apparatus of claim 1 , wherein

generating the measured charge signal based on the first charge measurement and the second charge measurement comprises combining the first charge measurement and the second charge measurement.

3. The apparatus of claim 1 , wherein the operations further comprise:

comparing the measured charge signal to a reference measurement; and

determining that an object is within a detection distance of the touch sensor based on a difference between the measured charge signal and the reference measurement.

4. The apparatus of claim 1 , wherein:

the first charge measurement is a first integration performed over a first time period,

the second charge measurement is a second integration performed over a second time period, and

the first time period and the second time period are equal.

5. The apparatus of claim 1 , wherein applying the second excitation voltage comprises amplifying the first excitation voltage.

6. The apparatus of claim 1 , wherein a signal to noise ratio of the measured charge signal is characterized as follows:

(

V

1

+

N

1

)

-

(

V

2

+

N

2

)

(

N

1

+

N

2

where V1 represents a magnitude of a first voltage change from the first voltage level to the second voltage level, N1 represents a first noise component associated with the first voltage change, V1+N1 represents the first charge measurement, V2 represents a magnitude of a second voltage change from the third voltage level to the fourth voltage level, N2 represents a second noise component associated with the second voltage change, and V2+N2 represents the second charge measurement.

7. The apparatus of claim 1 , wherein a magnitude of the first charge measurement is different than a magnitude of the second charge measurement.

8. The apparatus of claim 1 , wherein the first voltage level and the fourth voltage level are different.

Assignments (18)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: ATMEL CORPORATION
Reel/Frame 059262/0105 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: ATMEL CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041715/0747 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2016
From: ATMEL TECHNOLOGIES U.K. LIMITED
To: ATMEL CORPORATION
Reel/Frame 039736/0403 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2016
From: PEDERSEN, TROND JARLE
To: ATMEL CORPORATION
Reel/Frame 039065/0968 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 21, 2016
From: DUBERY, JOHN STANLEY
To: ATMEL TECHNOLOGIES U.K. LIMITED
Reel/Frame 038977/0216 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 21, 2016
From: PEDERSEN, TROND JARLE
To: ATMEL CORPORATION
Reel/Frame 038977/0143 →
Continuity (1)
Related Publication 20170364174A1 · Dec 21, 2017
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