Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment

1. A substrate processing system, comprising:

a substrate support including

an inner portion positioned below a gas distribution device configured to direct first process gases toward the inner portion, and

an outer portion including an edge ring, wherein the edge ring is positioned around an outer perimeter of the inner portion to at least partially surround the inner portion and a substrate arranged on the inner portion, wherein the edge ring is configured to be raised and lowered relative to the inner portion, and wherein the edge ring is configured to direct second process gases toward the inner portion; and

a controller configured to, during processing of the substrate,

calculate a distribution of etch by-product material redeposited onto the substrate based on data that associates the distribution of etch by-product material redeposited onto the substrate with at least one of edge ring position, the first process gases directed by the gas distribution device, and the second process gases directed by the edge ring, and

in response to the calculated distribution, (i) selectively adjust a position of the edge ring and (ii) selectively adjust flow of at least one of the first process gases and the second process gases.

2. The substrate processing system of claim 1 , wherein the data includes an average of (i) etch by-product material deposited on the substrate caused by the first process gases and (ii) etch by-product material deposited on the substrate caused by the second process gases.

3. The substrate processing system of claim 1 , wherein the controller, based on the data, (i) adjusts the position of the edge ring to a first position, adjusts flow of the first process gases to a first flow rate, and adjusts flow of the second process gases to a second flow rate for a first predetermined period, and (ii) subsequent to the first predetermined period, adjusts the position of the edge ring to a second position, adjusts the flow of the first process gases to a third flow rate, and adjusts the flow of the second process gases to a fourth flow rate for a second predetermined period.

4. The substrate processing system of claim 3 , wherein adjusting the flow to at least one of the first flow rate, the second flow rate, the third flow rate, and the fourth flow rate includes turning off a corresponding one of the first process gases and the second process gases.

5. The substrate processing system of claim 1 , wherein the edge ring includes a plurality of gas injection nozzles.

6. The substrate processing system of claim 5 , wherein the plurality of gas injection nozzles are in fluid communication with a source of the second process gases via a plenum defined with the edge ring and at least one conduit coupled to the source.

7. A method for processing a substrate in a substrate processing system, the method comprising:

providing a substrate support having an inner portion and an outer portion, wherein the inner portion positioned below a gas distribution device, and wherein the outer portion includes an edge ring positioned around an outer perimeter of the inner portion to at least partially surround the inner portion and a substrate arranged on the inner portion;

directing first process gases toward the inner portion using the gas distribution device;

directing second process gases toward the inner portion using the edge ring; and

during processing of the substrate,

calculating a distribution of etch by-product material redeposited onto the substrate based on data that associates the distribution of etch by-product material redeposited onto the substrate with at least one of edge ring position, the first process gases directed by the gas distribution device, and the second process gases directed by the edge ring, and

in response to the calculated distribution, selectively adjusting a position of the edge ring upward or downward relative to the inner portion and selectively adjusting flow of at least one of the first process gases and the second process gases.

8. The method of claim 7 , wherein the data includes an average of (i) etch by-product material deposited on the substrate caused by the first process gases and (ii) etch by-product material deposited on the substrate caused by the second process gases.

9. The method of claim 7 , further comprising, based on the data, (i) adjusting the position of the edge ring to a first position, adjusting flow of the first process gases to a first flow rate, and adjusting flow of the second process gases to a second flow rate for a first predetermined period, and (ii) subsequent to the first predetermined period, adjusting the position of the edge ring to a second position, adjusting the flow of the first process gases to a third flow rate, and adjusting the flow of the second process gases to a fourth flow rate for a second predetermined period.

10. The method of claim 9 , wherein adjusting the flow to at least one of the first flow rate, the second flow rate, the third flow rate, and the fourth flow rate includes turning off a corresponding one of the first process gases and the second process gases.

11. The method of claim 7 , wherein the edge ring includes a plurality of gas injection nozzles.

12. The method of claim 11 , wherein the plurality of gas injection nozzles are in fluid communication with a source of the second process gases via a plenum defined with the edge ring and at least one conduit coupled to the source.