Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
1. An electrical junction comprising an interface layer disposed between a contact metal and a semiconductor, the semiconductor comprising a source or drain of a transistor, the interface layer comprising a metal oxide separation layer and a monolayer passivation layer and configured to provide a specific contact resistivity between the contact metal and the semiconductor of less than 1 Ω·μm 2 , wherein the monolayer passivation layer is a monolayer of arsenic.
2. The electrical junction of claim 1 , wherein the contact metal is a metal or a stack of metals deposited on the interface layer.
3. The electrical junction of claim 2 , wherein the metal or stack of metals includes titanium.
4. The electrical junction of claim 3 , wherein the metal oxide of the interface layer comprises an oxide of titanium.
5. The electrical junction of claim 1 , wherein layer comprises an oxide of titanium.
6. The electrical junction of claim 1 , wherein the contact metal is a metal or a stack of metals adjacent the interface layer.
7. An electrical junction comprising an interface layer disposed between a contact metal and a semiconductor, the semiconductor comprising a source or drain of a transistor, and the interface layer comprising a metal oxide and monolayer passivation layer, wherein the interface layer is configured to provide a specific contact resistivity between the contact metal and the semiconductor of less than 1 Ω·μm 2 .
8. The electrical junction of claim 7 , wherein the monolayer passivation layer comprises an oxide of the semiconductor.
9. The electrical junction of claim 8 , wherein the contact metal is a metal or a stack of metals deposited on the interface layer.
10. The electrical junction of claim 9 , wherein the metal or stack of metals includes titanium.
11. The electrical junction of claim 8 , wherein eta oxide of the interface layer comprises an oxide of titanium.
12. The electrical junction of claim 11 , wherein the contact metal is a metal or a stack of metals deposited on the interface layer.
13. The electrical junction of claim 12 , wherein the metal or stack of metals includes titanium.
14. The electrical junction of claim 11 , wherein the contact metal is a metal or a stack of metals adjacent the interface layer.
15. The electrical junction of claim 8 , wherein the oxide of the semiconductor comprises an oxide of silicon.
16. The electrical junction of claim 8 , wherein the oxide of the semiconductor of the interface layer is adjacent the semiconductor.
17. The electrical junction of claim 16 , wherein the oxide of the semiconductor comprises an oxide of silicon.
18. The electrical junction of claim 8 , wherein the contact metal is a metal or a stack of metals adjacent the interface layer.