Vertical topology light emitting device
A light emitting device includes a metal support structure comprising Cu; an adhesion structure on the metal support structure and comprising Au; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, the GaN-based semiconductor structure comprising a first-type GaN layer, an active layer, and a second-type GaN layer; a top interface layer on the GaN-based semiconductor structure and comprising Ti; and a contact pad on the top interface layer and comprising Au, wherein the GaN-based semiconductor structure is less than 1/20 thick of a thickness of the metal support structure.
1. A light emitting device, comprising:
a metal support structure comprising Cu;
an adhesion structure on the metal support structure and comprising Au;
a reflective conductive contact on the adhesion structure;
a GaN-based semiconductor structure on the reflective conductive contact, the GaN-based semiconductor structure comprising a first-type GaN layer, an active layer, and a second-type GaN layer;
a top interface layer on the GaN-based semiconductor structure and comprising Ti; and
a contact pad on the top interface layer and comprising Au,
wherein the GaN-based semiconductor structure is less than 1/20 thick of a thickness of the metal support structure.
2. The device according to claim 1 , wherein the GaN-based semiconductor structure has a first surface and a second surface, the first and second surfaces being opposite to each other, and
wherein the second surface is closer to the metal support structure than the first surface, the first surface including a flat surface to enhance an adhesion between the first-type GaN layer and the top interface layer.
3. The device according to claim 1 , wherein the reflective conductive contact directly contacts the GaN-based semiconductor structure.
4. The device according to claim 1 , wherein the second-type GaN layer is on the reflective conductive contact,
wherein the first-type GaN layer is disposed on the active layer, and
wherein the active layer is between the first-type GaN layer and the second-type GaN layer.
5. The device according to claim 1 , wherein the first-type GaN layer is an n-type GaN layer, and
wherein the second-type GaN layer is a p-type GaN layer.
6. The device according to claim 1 , wherein the active layer comprises InGaN/GaN.
7. The device according to claim 1 , wherein a width of the top interface layer is smaller than a width of the active layer, in a first direction perpendicular to a thickness direction of the GaN-based semiconductor structure.
8. The device according to claim 1 , wherein the contact pad is on a center of the top interface layer.
9. The device according to claim 1 , wherein the metal support structure is thicker than each of the adhesion layer, the reflective conductive contact, the GaN-based semiconductor structure, the top interface layer, and the contact pad.
10. The device according to claim 1 , wherein the metal support structure, the adhesion structure, the reflective conductive contact, the GaN-based semiconductor structure, the top interface layer, and the contact pad vertically overlap each other in a thickness direction of the GaN-based semiconductor structure.
11. The device according to claim 1 , wherein the GaN-based semiconductor structure has less thickness than 5 μm.
12. A light emitting device, comprising:
a metal support structure;
an adhesion structure on the metal support structure and comprising Au;
a reflective conductive contact on the adhesion structure;
a GaN-based semiconductor structure comprising a p-type GaN layer on the reflective conductive contact, an active layer on the p-type GaN layer, and an n-type GaN layer on the active layer; and
an electrical contact on the GaN-based semiconductor structure,
wherein the electrical contact comprises:
an n-type interface layer on the GaN-based semiconductor structure and comprising Ti; and
a contact pad on the n-type interface layer and comprising Au, and
wherein the GaN-based semiconductor structure is less than 1/20 thick of a first thickness of the metal support structure.
13. The device according to claim 12 , wherein the first thickness of the metal support structure is greater than a sum of a second thickness of the adhesion layer and a third thickness of the reflective conductive contact.
14. The device according to claim 12 , wherein the metal support structure has less the first thickness than 100 μm.
15. The device according to claim 12 , wherein the metal support structure comprises a material selected from the group consisting of Cu, Au, or Al.
16. The device according to claim 12 , wherein the adhesion layer further comprises Cr.
17. The device according to claim 12 , wherein the n-type interface layer further comprises Al.
18. The device according to claim 12 , wherein further comprises Cr the GaN-based semiconductor structure has less thickness than 5 μm.
19. The device according to claim 12 , wherein the n-type interface layer has a multilayer structure.
20. The device according to claim 12 , wherein the contact pad has a multilayer structure.