Method for fabricating MRAM bits on a tight pitch
A method for fabricating magnetoresistive random access memory (MRAM) devices on a tight pitch is provided. The method generally includes etching a pattern of columns into a hardmask layer disposed on a magnetic tunnel junction (MTJ) disposed on a substrate having electrically conductive contacts, the MTJ comprising a tunnel barrier layer between first and second ferromagnetic layers, the pattern of columns aligned to the electrically conductive contacts; etching the first ferromagnetic layer to expose the tunnel barrier layer and to form columns comprising the hardmask layer and the first ferromagnetic layer; forming a passivation layer on the exposed tunnel barrier layer and on top side surfaces of the columns; and etching the passivation layer on the exposed tunnel barrier layer, the exposed tunnel barrier layer, and the second ferromagnetic layer to form columns comprising the hardmask layer, the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer.
1. A method for fabricating a magnetoresistive random access memory (MRAM) device, comprising:
etching a pattern of first columns into a hardmask layer disposed on a magnetic tunnel junction (MTJ) stack that is disposed on a substrate having one or more electrically conductive contacts, wherein the MTJ stack comprises a tunnel barrier layer between first and second ferromagnetic layers, wherein the second ferromagnetic layer is disposed on and in contact with the one or more electrically conductive contacts and the substrate, and wherein the pattern of first columns is aligned to the one or more electrically conductive contacts;
etching the first ferromagnetic layer to expose the tunnel barrier layer and to form second columns comprising the hardmask layer and the first ferromagnetic layer;
forming a passivation layer on the exposed tunnel barrier layer and on top surfaces and side surfaces of the second columns; and
etching the passivation layer on the exposed tunnel barrier layer, the exposed tunnel barrier layer, and the second ferromagnetic layer to form third columns comprising the hardmask layer, the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer.
2. The method of claim 1 , wherein a distance between the third columns is less than or equal to 5 times a width of the columns.
3. The method of claim 1 , wherein the hardmask layer comprises TaN.
4. The method of claim 1 , wherein the tunnel barrier layer comprises MgO.
5. The method of claim 1 , wherein the etching a pattern of first columns is performed using ion milling.
6. The method of claim 1 , wherein the passivation layer comprises a dielectric layer.
7. The method of claim 1 , wherein the passivation layer comprises an oxide layer or a nitride layer.
8. The method of claim 1 , wherein the etched second ferromagnetic layer has a width greater than a width of the columns comprising the first ferromagnetic layer and the hardmask layer.
9. A method for fabricating a magnetoresistive random access memory (MRAM) device, comprising:
etching a pattern of first columns into a hardmask layer disposed on a magnetic tunnel junction (MTJ) stack that is disposed on a substrate having one or more electrically conductive contacts, wherein the MTJ stack comprises a tunnel barrier layer between first and second ferromagnetic layers, wherein the second ferromagnetic layer is disposed on and in contact with the one or more electrically conductive contacts and the substrate, and wherein the pattern of first columns is aligned to the one or more electrically conductive contacts, wherein the hardmask layer is disposed on and in contact with the first ferromagnetic layer;
etching the first ferromagnetic layer to expose the tunnel barrier layer and to form second columns comprising the hardmask layer and the first ferromagnetic layer;
forming a passivation layer on the exposed tunnel barrier layer and on top surfaces and side surfaces of the first columns; and
etching the passivation layer on the exposed tunnel barrier layer, the exposed tunnel barrier layer, and the second ferromagnetic layer to form third columns comprising the hardmask layer, the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer.
10. The method of claim 9 , wherein a distance between the third columns is less than or equal to 5 times a width of the third columns.
11. The method of claim 9 , wherein the hardmask layer comprises TaN.
12. The method of claim 9 , wherein the tunnel barrier layer comprises MgO.
13. The method of claim 9 , wherein the etching a pattern of first columns is performed using ion milling.
14. The method of claim 9 , wherein the passivation layer comprises a dielectric layer.
15. The method of claim 9 , wherein the passivation layer comprises an oxide layer or a nitride layer.
16. The method of claim 9 , wherein the etched second ferromagnetic layer has a width greater than a width of the columns comprising the first ferromagnetic layer and the hardmask layer.