IP Library Granted Patent US 9,947,606
Granted Patent B2
US 9,947,606 · App. 15/395,027 · Granted Apr 17, 2018

Semiconductor device including electromagnetic absorption and shielding

Inventors: Dacheng Huang (Shanghai, CN); Ye Bai (Shanghai, CN); Kaiyou Qian (Shanghai, CN); Chin-Tien Chiu (Taichung, CN)
Assignee: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.
H01L23/3135H01L23/49811H01L23/552H01L25/0657H01L23/3121H01L25/18H01L2224/48091H01L2224/48145H01L2224/48147H01L2224/48227H01L2225/0651H01L2225/06506H01L2225/06537H01L2225/06562H01L2924/15311
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Quick Facts
Patent No.
US 9,947,606
App. No.
15/395,027
Granted
Apr 17, 2018
Kind
B2
Abstract

A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Claims (22)

1. A method of shielding a semiconductor device from at least one of EMI and RFI, comprising the steps of:

(a) mounting one or more semiconductor die on a substrate;

(b) encapsulating the one or more semiconductor die on the substrate in molding compound;

(c) applying a first layer of material onto the molding compound, and applying a second layer onto the first layer, one of the first and second layers absorbing at least one of EMI and RFI, and the other of the first and second layers reflecting at least one of EMI and RFI.

2. The method of claim 1 , further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI on the substrate.

3. The method of claim 1 , further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI in a solder mask layer provided on the substrate.

4. The method of claim 1 , wherein said step (c) comprises applying the first layer of absorbing material for absorbing at least one of EMI and RFI on the molding compound.

5. The method of claim 1 , wherein said step (c) of applying the second layer onto the first layer comprises applying an electrically conductive shielding layer on the first layer for shielding the semiconductor device against at least one of EMI and RFI.

6. The method of claim 5 , further comprising the step (e) of grounding the electrically conductive shielding layer to the substrate.

7. The method of claim 6 , wherein said step (e) comprises the step of grounding the electrically conductive shielding layer to the substrate with a grounding pin mounted on the substrate and extending into contact with the electrically conductive shielding layer.

8. The method of claim 1 , the method further comprising the step [d] of performing a second encapsulation step, subsequent to said steps (b) and (c) to apply molding compound around the first and second layers.

9. A method of shielding a semiconductor device from at least one of EMI and RFI, comprising the steps of:

(a) mounting one or more semiconductor die on a substrate;

(b) encapsulating the one or more semiconductor die on the substrate in molding compound;

(c) encapsulating the molding compound in a layer of electrically conducting shielding material that reflects at least one of EMI and RFI; and

(d) grounding the electrically conductive shielding layer to the substrate with a grounding pin mounted on the substrate and extending away from the substrate into contact with the electrically conductive shielding layer.

10. The method of claim 9 , further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI on the substrate.

11. The method of claim 9 , further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI in a solder mask layer provided on the substrate.

12. The method of claim 9 , further comprising the step of providing a layer of absorbing material for absorbing at least one of EMI and RFI on the molding compound.

13. The method of claim 12 , said step of applying the layer of electrically conducting shielding material comprises the step of applying the layer of electrically conducting shielding material onto the layer of absorbing material.

14. The method of claim 12 , said step of applying the layer of electrically conducting shielding material comprises the step of applying the layer of electrically conducting shielding material onto the molding compound and applying the layer of absorbing material onto the layer of electrically conducting shielding material.

15. The method of claim 9 , further comprising the step (e) of performing a second encapsulation step, subsequent to said steps (b) and (c) to apply molding compound around the layer of absorbing material and the layer of electrically conducting shielding material.

Assignments (5)
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2024
From: SANDISK TECHNOLOGIES LLC
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 069796/0423 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2024
From: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO. LTD.
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 066087/0523 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2017
From: HUANG, DACHENG; BAI, YE; QIAN, KAIYOU; CHIU, CHIN-TIEN
To: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.
Reel/Frame 041112/0077 →
Priority Claims (1)
WO PCT/CN2012/074737 · Apr 26, 2012 · international
Continuity (2)
Division 14348828
Related Publication 20170110383A1 · Apr 20, 2017