Image sensor and method for fabricating the same
An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices, a dielectric isolating structure and a plurality of spacers. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other. The spacers are disposed on a plurality of sidewalls of the grid structure.
1. An image sensor, comprising:
a semiconductor substrate having a backside surface and a front side surface opposite to the backside surface;
a plurality of photoelectric transducer devices disposed on the front side surface;
a dielectric isolating structure extending downwards into the semiconductor substrate from the front side surface and penetrating through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other;
a plurality of spacers disposed on a plurality of sidewalls of the grid structure protruding from the backside surface; and
a color filter (CF) formed on the grid structure and at least partially extending into recesses to directly contacting with the semiconductor substrate.
2. The image sensor according to claim 1 , wherein the recess are defined by the grid structure and the semiconductor substrate, and each of the recesses is corresponding to a sub-pixel region that are separated by the dielectric isolating structure.
3. The image sensor according to claim 2 , further comprising:
a plurality of micro lenses disposed on the CF.
4. The image sensor according to claim 1 , wherein the dielectric isolating structure comprises a material selected from a group consisting of silicon oxide, silicon nitride (SiN), silicon oxynitride (SiON) and arbitrary combinations thereof.
5. The image sensor according to claim 1 , wherein the spacers comprises a light shielding material selected from a group consisting of metal, metal oxide, metal nitride, alloys and arbitrary combinations thereof.
6. The image sensor according to claim 1 , wherein the spacers comprise a metal material selected from a group consisting of copper (Cu), silver (Ag), aluminum (Al), titanium (Ti), tungsten (W), tantalum (Ta) and arbitrary combinations thereof.
7. The image sensor according to claim 1 , wherein each of the photoelectric transducer devices comprises:
a photo diode (PD) disposed in the semiconductor substrate;
a floating drain region disposed in the semiconductor substrate and separated from the PD; and
a gate structure disposed on the front side surface of the semiconductor substrate and adjacent to the PD and the floating drain region.
8. The image sensor according to claim 1 , further comprising a metal interconnection structure disposed on the front side surface and electrically connected to the photoelectric transducer devices.
9. The image sensor according to claim 1 , wherein the grid structure comprises:
a frame portion consisting of a portion of the dielectric isolating structure that is exposed from the backside surface of the substrate; and
of the recess being defined by the frame portion and the backside surface of the semiconductor substrate.