Insulated gate field effect transistor having passivated schottky barriers to the channel
A transistor having at least one passivated Schottky barrier to a channel includes an insulated gate structure on a p-type substrate in which the channel is located beneath the insulated gate structure. The channel and the insulated gate structure define a first and second undercut void regions that extend underneath the insulated gate structure toward the channel from a first and a second side of the insulated gate structure, respectively. A passivation layer is included on at least one exposed sidewall surface of the channel and metal source and drain terminals are located on respective first and second sides of the channel, including on the passivation layer and within the undercut void regions beneath the insulated gate structure. At least one of the metal source and drain terminals comprises a metal that has a work function near a valence band of the p-type substrate.
1. A transistor, comprising at least one electrical junction having a semiconductor channel region comprising an undoped semiconductor material, a metal source/drain contact to the channel region, and an interface layer disposed between the semiconductor channel region and the metal source/drain contact, the interface layer comprising a material that passivates the semiconductor channel region.
2. The transistor of claim 1 , wherein the semiconductor channel region comprises one of: Si, Ge, SiGe or SiC.
3. The transistor of claim 1 , wherein the interface layer comprises a passivation material selected from the group consisting of a nitride, an arsenide, an oxide, and a fluoride of the undoped semiconductor material comprising the semiconductor channel region.
4. The transistor of claim 3 , wherein the interface layer has a thickness of a monolayer.
5. The transistor of claim 1 , wherein the interface layer comprises a passivation layer and a separation layer, the passivation layer comprising a passivation material selected from the group consisting of a nitride, an arsenide, an oxide, and a fluoride of the undoped semiconductor material comprising the semiconductor channel region.
6. The transistor of claim 1 , wherein the semiconductor channel region comprises a layer of silicon disposed on an insulator.
7. The transistor of claim 1 , wherein said transistor comprises a FinFET.
8. The transistor of claim 7 , wherein the semiconductor channel region comprises one of: Si, Ge, SiGe or SiC.
9. The transistor of claim 7 , wherein the interface layer comprises a passivation material selected from the group consisting of a hydride, a nitride, an arsenide, an oxide, and a fluoride of the undoped semiconductor material comprising the semiconductor channel region.
10. The transistor of claim 9 , wherein the interface layer has a thickness of a monolayer.
11. The transistor of claim 7 , wherein the interface layer comprises a passivation layer and a separation layer, the passivation layer comprising a passivation material selected from the group consisting of a hydride, a nitride, an arsenide, an oxide and a fluoride of the undoped semiconductor material comprising the semiconductor channel region.
12. A method of fabricating an electrical junction in a transistor, comprising forming a portion of a metal source adjacent a semiconductor channel and subsequently forming an interface layer between the semiconductor channel and the portion of the metal source, the interface layer comprising a passivation layer and a separation layer, the passivation layer comprising a passivation material selected from the group consisting of a hydride, a nitride, an arsenide, an oxide and a fluoride of a material comprising the semiconductor channel.
13. The method of claim 12 , wherein the passivation layer comprises only a monolayer of the passivation material.
14. An electrical junction in a transistor, comprising a metal source or drain, a semiconductor channel, and an interface layer between the semiconductor channel and the metal source or drain, the interface layer being disposed at least partially subjacent a gate of the transistor and comprising a passivation layer formed of a passivation material and a separation layer formed of a nitride.
15. The electrical junction of claim 14 , wherein the passivation material is an oxide of a semiconductor that makes up the semiconductor channel.
16. The electrical junction of claim 15 , wherein the passivation layer comprises a monolayer of the passivation material.
17. A transistor, comprising at least one electrical junction having a semiconductor channel region, a metal source/drain contact to the channel region, and an interface layer disposed between the semiconductor channel region and the metal source/drain contact, the interface layer comprising a passivation layer and a separation layer, the passivation layer comprising a material that passivates the semiconductor channel region selected from the group consisting of a nitride, an arsenide, an oxide, and a fluoride of a material comprising the semiconductor channel region.
18. The transistor of claim 17 , wherein the semiconductor channel region comprises one of: Si, Ge, SiGe or SiC.
19. The transistor of claim 17 , wherein the semiconductor channel region comprises a doped semiconductor material.
20. The transistor of claim 17 , wherein the semiconductor channel region comprises an undoped semiconductor material.
21. The transistor of claim 17 , wherein the semiconductor channel region comprises a layer of silicon disposed on an insulator.
22. The transistor of claim 17 , wherein the interface layer has a thickness of a monolayer.
23. The transistor of claim 17 , wherein said transistor comprises a FinFET.
24. The transistor of claim 23 , wherein the semiconductor channel region comprises one of: Si, Ge, SiGe or SiC.
25. The transistor of claim 23 , wherein the semiconductor channel region comprises a doped semiconductor material.
26. The transistor of claim 23 , wherein the semiconductor channel region comprises undoped semiconductor material.
27. The transistor of claim 23 , wherein the interface layer has a thickness of a monolayer.
28. A transistor, comprising at least one electrical junction having a semiconductor channel region, a metal source/drain contact to the channel region, and an interface layer disposed between the semiconductor channel region and the metal source/drain contact, the interface layer comprising a material that passivates the semiconductor channel region selected from the group consisting of a nitride, an arsenide, an oxide, and a fluoride of a material comprising the semiconductor channel region and having a thickness of a monolayer.
29. The transistor of claim 28 , wherein the semiconductor channel region comprises one of: Si, Ge, SiGe or SiC.
30. The transistor of claim 28 , wherein the semiconductor channel region comprises a doped semiconductor material.
31. The transistor of claim 28 , wherein the semiconductor channel region comprises undoped semiconductor material.
32. The transistor of claim 28 , wherein the semiconductor channel region comprises a layer of silicon disposed on an insulator.
33. The transistor of claim 28 , wherein said transistor comprises a FinFET.
34. The transistor of claim 33 , wherein the semiconductor channel region comprises one of: Si, Ge, SiGe or SiC.
35. The transistor of claim 33 , wherein the semiconductor channel region comprises a doped semiconductor material.
36. The transistor of claim 33 , wherein the semiconductor channel region comprises undoped semiconductor material.
37. A method of fabricating an electrical junction in a transistor, comprising forming a portion of a metal source adjacent a semiconductor channel and subsequently forming an interface layer between the semiconductor channel and the portion of the metal source, the interface layer comprising a monolayer passivation layer of a passivation material selected from the group consisting of a hydride, a nitride, an arsenide, an oxide and a fluoride of a material comprising the semiconductor channel.
38. The method of claim 37 , wherein the interface layer additionally comprises a separation layer.
39. The method of claim 37 , wherein the semiconductor channel contact comprises one of: Si, Ge, SiGe or SiC.
40. The method of claim 37 , wherein the semiconductor channel comprises undoped semiconductor material.
41. The method of claim 37 , wherein the semiconductor channel comprises a layer of silicon disposed on an insulator.