Chip resistor
The invention relates to a chip resistor. A method of manufacturing a chip resistor comprises the steps of: (a) applying a conductive paste on an insulating substrate, wherein the conductive paste comprises, (i) 40 to 80 weight percent (wt. %) of a conductive powder; (ii) 1 to 14 wt. % of a glass frit, (iii) 0.01 to 3 wt. % of magnesium oxide (MgO), and (iv) 10 to 55 wt. % of an organic vehicle, wherein the wt. % is based on weight of the conductive paste; (b) firing the applied conductive paste to form the front electrodes.
1. A method of manufacturing a chip resistor comprising the steps of:
(a) applying a conductive paste on an insulating substrate, wherein the conductive paste comprises,
(i) 40 to 80 weight percent (wt. %) of a conductive powder;
(ii) 1 to 14 wt. % of a glass frit,
(iii) 0.01 to 3 wt. % of magnesium oxide (MgO),
(iv) 10 to 55 wt. % of an organic vehicle, and
(v) anorthite (CaAl 2 Si 2 O 8 ),
wherein the wt. % is based on weight of the conductive paste;
(b) firing the applied conductive paste to form the front electrodes.
2. The method of claim 1 , wherein the insulating substrate is a ceramic substrate.
3. The method of claim 1 , wherein particle diameter (D50) of the conductive powder is 0.5 to 12 μm.
4. The method of claim 1 , wherein the conductive powder is selected from the group consisting of aluminum, nickel, copper, silver, gold, molybdenum, magnesium, tungsten, cobalt, zinc, platinum, palladium, an alloy thereof and a mixture thereof.
5. The method of claim 1 , wherein the glass frit is a lead-free glass frit comprising a metal oxide selected from the group consisting of bismuth oxide (Bi 2 O 3 ), boron oxide (B 2 O 3 ), zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ) and a mixture thereof.
6. The method of claim 1 , wherein the MgO is in shape of powder with particle diameter (D50) of 0.1 to 8 μm.
7. The method of claim 1 , wherein the firing temperature in step (b) is 700 to 950° C.
8. The method of claim 1 , wherein the method further comprises steps (c) applying a resistor paste on the insulating substrate to bridge a pair of front electrodes; and (d) firing the applied resistor paste to form a resistor thick film.
9. A conductive paste to form front electrodes of a chip resistor, the conductive paste comprises:
(i) 40 to 80 weight percent (wt. %) of a conductive powder;
(ii) 1 to 14 wt. % of a glass frit,
(iii) 0.01 to 3 wt. % of magnesium oxide (MgO),
(iv) 10 to 55 wt. % of an organic vehicle, and
(v) anorthite (CaAl 2 Si 2 O 8 ),
wherein the wt. % is based on weight of the conductive paste.
10. The conductive paste of claim 9 , wherein particle diameter (D50) of the conductive powder is 0.5 to 12 μm.
11. The conductive paste of claim 9 , wherein the glass frit is a lead-free glass frit comprising a metal oxide selected from the group consisting of bismuth oxide (Bi 2 O 3 ), boron oxide (B 2 O 3 ), zinc oxide (ZnO), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ) and a mixture thereof.
12. The conductive paste of claim 9 , wherein the MgO is in shape of powder with particle diameter (D50) of 0.1 to 8 μm.
13. A chip resistor comprises an insulating substrate, a pair of front electrodes formed on the insulating substrate, and a resistor thick film formed on the insulating substrate to bridge a pair of front electrodes, wherein the front electrodes comprises a conductive metal, a glass, and magnesium oxide (MgO) and anorthite (CaAl 2 Si 2 O 8 ).