Semiconductor device assembles with electrically functional heat transfer structures
Semiconductor device assemblies having stacked semiconductor dies and electrically functional heat transfer structures (HTSs) are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a mounting surface with a base region and a peripheral region adjacent the base region. At least one second semiconductor die can be electrically coupled to the first semiconductor die at the base region. The device assembly can also include an HTS electrically coupled to the first semiconductor die at the peripheral region.
1. A semiconductor device assembly, comprising:
a first semiconductor die including a mounting surface having a base region and a peripheral region peripheral to and extending around at least a portion of the base region;
at least one second semiconductor die over the base region and electrically coupled to the first semiconductor die; and
an electrically functional heat transfer structure (HTS) coupled to the first semiconductor die at the peripheral region and spaced outwardly apart from the at least one second semiconductor die,
wherein the HTS includes a first HTS bond pad electrically coupled to a first conductive material and a second HTS bond pad electrically coupled to a second conductive material, the second conductive material being spaced apart from the first conductive material such that the first and second conductive materials comprise at least a portion of a capacitor, and
wherein the HTS includes a plurality of volumes of silicon, at least a portion of the volumes of silicon comprising the capacitor.
2. The semiconductor device assembly of claim 1 wherein the first semiconductor die includes an integrated circuit, and wherein the HTS is electrically coupled to first semiconductor die via the integrated circuit.
3. The semiconductor device assembly of claim 1 , further comprising a lid having a cap portion, and wherein the HTS is in indirect contact with the cap portion via an intervening material.
4. The semiconductor device assembly of claim 3 wherein the lid further includes a wall portion, and wherein the HTS is positioned proximate to the wall portion.
5. The semiconductor device assembly of claim 1 wherein:
the HTS is structurally distinct from the first and second semiconductor dies,
the HTS is positioned only within the peripheral region, and
the at least one second semiconductor die is positioned only within the base region.
6. The semiconductor device assembly of claim 1 wherein the first semiconductor die includes a first side adjacent the HTS, and a first bond pad at the first side and generally aligned with the first HTS bond pad, the semiconductor device assembly further comprising a conductive element electrically coupling the first HTS bond pad to the first bond pad.
7. The semiconductor device assembly of claim 1 wherein the HTS includes:
a dielectric material between the first and second conductive materials.
8. The semiconductor device assembly of claim 1 , further comprising a lid having a cap portion and a wall portion, wherein the at least one second semiconductor die includes a plurality of vertically-stacked second semiconductor dies, and wherein the HTS is positioned vertically between the first semiconductor die and the cap portion and laterally between the plurality of second semiconductor dies and the wall portion.
9. The semiconductor device assembly of claim 1 , further comprising a lid having a wall portion peripheral to the first and second semiconductor dies, wherein an upper most surface of the wall portion is coplanar with an upper most surface of the HTS.
10. The semiconductor device assembly of claim 1 , further comprising:
a base substrate;
a lid mounted to the base substrate and including a wall portion peripheral to the first semiconductor die, and a cap portion over the at least one second semiconductor die; and
an adhesive material extending continuously between the (a) cap portion and (b) upper surfaces of the wall portion, the HTS and the at least one second semiconductor die.
11. A semiconductor device assembly, comprising:
a package substrate;
a semiconductor die mounted to the package substrate and having a base region, a peripheral region peripheral to the base region, and an integrated circuit;
a semiconductor die stack mounted to the base region of the semiconductor die; and
an electrically functional heat transfer structure (HTS) mounted to the peripheral region of the semiconductor die and including a first HTS bond pad electrically coupled to a first conductive feature and a second HTS bond pad electrically coupled to a second conductive feature separated from the first conductive feature, wherein the first and second conductive features comprise at least a portion of an electrical component electrically coupled to the integrated circuit of the semiconductor die
wherein the electrical component is a capacitor, and the HTS includes a plurality of volumes of silicon comprising the capacitor.
12. The semiconductor device assembly of claim 11 , further comprising a lid having a cap portion and a wall portion, wherein the lid is mounted to the package substrate directly proximate the wall portion, and wherein the HTS vertically extends from the semiconductor die to a position adjacent to and in contact with the cap portion.
13. The semiconductor device assembly of claim 12 wherein the contact between the HTS and the cap portion is direct contact.
14. The semiconductor device assembly of claim 12 wherein the contact between the HTS and the cap portion is indirect contact via an intervening material.
15. The semiconductor device assembly of claim 11 wherein the electrical component is a resistor.
16. A semiconductor device assembly, comprising:
a support substrate;
a first semiconductor die mounted to the support substrate, wherein the first semiconductor die includes a first integrated circuit and a second integrated circuit;
a die stack including a plurality of second semiconductor dies, wherein the die stack is mounted to the first semiconductor die and electrically coupled to the first integrated circuit; and
an electrically functional heat transfer structure (HTS) mounted over the support substrate and peripheral to the die stack, wherein the HTS is electrically coupled to the second integrated circuit, and wherein the HTS includes a first HTS bond pad electrically coupled to a first conductive material and a second HTS bond pad electrically coupled to a second conductive material, the second conductive material being separated from the first conductive material such that the first and second conductive materials comprise at least a portion of a capacitor,
wherein the HTS includes a plurality of volumes of silicon, at least a portion of the volumes of silicon being between the first and second conductive materials, and
wherein the first and second HTS bond pads provide an electrical connection to a capacitive electrical path that is at least partially formed via the volumes of silicon.
17. The semiconductor device assembly of claim 16 , further comprising a lid mounted to the support substrate and including a cap portion extending in a lateral direction and a wall portion extending in a vertical direction, wherein the HTS is positioned (a) laterally between the wall portion and the die stack, and (b) vertically between the cap portion and the first semiconductor die.
18. The semiconductor device assembly of claim 17 wherein the HTS is in indirect contact with the lid via an intervening material.